SFH 415 U OSRAM Opto Semiconductors Inc, SFH 415 U Datasheet - Page 19

• Manufacturer Part Number: SFH 415 U
• Description: EMITTER IR GAAS 950NM 5MM RADIAL
• Manufacturer: OSRAM Opto Semiconductors Inc

Specifications of SFH 415 U

• Wavelength: 950nm
• Package / Case: Radial - 2 Lead
• Current - Dc Forward (if): 100mA
• Radiant Intensity (ie) Min @ If: 40mW/sr @ 100mA
• Voltage - Forward (vf) Typ: 1.3V
• Viewing Angle: 34°
• Orientation: Top View
• Mounting Type: Through Hole
• Beam Angle: 17 deg
• Radiant Intensity: 40 mW/sr
• Maximum Forward Current: 100 mA
• Maximum Power Dissipation: 165 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Fall Time: 500 ns
• Lens Shape: Circular
• Mounting Style: Through Hole
• Operating Voltage: 1.3 V
• Rise Time: 500 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 475-1458; Q62702P1137; SFH 415 U

Silicon Photodetectors For more detailed product information and Technical Datasheets, please visit
For more detailed product information and Technical Datasheets, please visit http://catalog.osram-os.com
DIL
TO92
TO92
T 1
T 1 3/4
T 1 3/4
T 1 3/4
Sidelooker
Package
PIN Photodiodes with daylight blocking filter matched for 880 nm IRED
Silicon Photodetectors
Type
BPW 34 FA
SFH 225 FA
SFH 235 FA
SFH 229 FA
SFH 203 FA
SFH 213 FA
SFH 203 PFA
SFH 205 FA
http://catalog.osram-os.com
Half
angle
φ ±
[°]
± 60
± 60
± 65
± 17
± 20
± 10
± 75
± 60
Radiant
sensitive
area typ.
[mm
7.02
4.84
7.02
0.31
1.00
1.00
1.00
7.02
2
]
I
[µA]
50 (≥
40)
34 (≥
25)
50 (≥
40)
20 (≥
10.8)
50 (≥
30)
90 (≥
65)
6.2 (≥
3.6)
60 (≥
45)
P
Measure-
ment
cond.
λ = 870
nm, E
mW/cm
V
λ = 870
nm, E
mW/cm
V
λ = 870
nm, E
mW/cm
V
λ = 870
nm, E
mW/cm
V
λ = 870
nm, E
mW/cm
V
λ = 870
nm, E
mW/cm
V
λ = 870
nm, E
mW/cm
V
λ = 870
nm, E
mW/cm
V
R
R
R
R
R
R
R
R
= 5 V
= 5 V
= 5 V
= 5 V
= 5 V
= 5 V
= 5 V
= 5 V
e
e
e
e
e
e
e
e
= 1
= 1
= 1
= 1
= 1
= 1
= 1
= 1
2
2
2
2
2
2
2
2
,
,
,
,
,
,
,
,
I
[nA]
2 (≤
30)
2 (≤
30)
2 (≤
30)
0.05 (≤
5)
1 (≤ 5)
1 (≤ 5)
1 (≤ 5)
2 (≤
30)
R
PIN Photodiodes with daylight blocking filter matched for 880 nm IRED
Measure-
ment
cond.
V
V
V
V
V
V
V
V
R
R
R
R
R
R
R
R
= 10 V
= 10 V
= 10 V
= 10 V
= 20 V
= 20 V
= 20 V
= 10 V
λ
[nm]
730 ...
1100
740 ...
1120
740 ...
1120
730 ...
1100
800 ...
1100
750 ...
1100
750 ...
1100
740 ...
1100
10%
typ.
t
typ
[µs]
0.02
0.02
0.02
0.01
0.005
0.005
0.005
0.02
r
, t
f
Measure-
ment
cond.
V
R
λ = 850 nm
V
R
λ = 850 nm
V
R
λ = 850 nm
V
R
λ = 850 nm
V
R
λ = 850 nm
V
R
λ = 850 nm
V
R
λ = 850 nm
V
R
λ = 850 nm
R
R
R
R
R
R
R
R
L
L
L
L
L
L
L
L
= 50 Ω,
= 50 Ω,
= 50 Ω,
= 10 V,
= 50 Ω,
= 20 V,
= 50 Ω,
= 20 V,
= 50 Ω,
= 20 V,
= 50 Ω,
= 50 Ω,
= 5 V,
= 5 V,
= 5 V,
= 5 V,
Ordering Code
Q62702P1129
Q62702P1051
Q62702P0273
Q62702P0216
Q62702P0956
Q62702P1671
Q62702P0947
Q62702P1677
Package
Fig.
41
42
42
13
39
20
40
43
127