SFH 415 U OSRAM Opto Semiconductors Inc, SFH 415 U Datasheet - Page 12

• Manufacturer Part Number: SFH 415 U
• Description: EMITTER IR GAAS 950NM 5MM RADIAL
• Manufacturer: OSRAM Opto Semiconductors Inc

Specifications of SFH 415 U

• Wavelength: 950nm
• Package / Case: Radial - 2 Lead
• Current - Dc Forward (if): 100mA
• Radiant Intensity (ie) Min @ If: 40mW/sr @ 100mA
• Voltage - Forward (vf) Typ: 1.3V
• Viewing Angle: 34°
• Orientation: Top View
• Mounting Type: Through Hole
• Beam Angle: 17 deg
• Radiant Intensity: 40 mW/sr
• Maximum Forward Current: 100 mA
• Maximum Power Dissipation: 165 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Fall Time: 500 ns
• Lens Shape: Circular
• Mounting Style: Through Hole
• Operating Voltage: 1.3 V
• Rise Time: 500 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 475-1458; Q62702P1137; SFH 415 U

Silicon Photodetectors For more detailed product information and Technical Datasheets, please visit
Silicon Photodetectors For more detailed product information and Technical Datasheets, please visit
120
SmartDIL
SmartDIL
Premolded SMD
MIDLED
MIDLED
Multi TOPLED
Package
Package
SMT Transistors in low profile, narrow angle MIDLED package
Package
Detector/Emitter in Multi TOPLED package
Silicon Photodetectors
Type
SFH 3400
SFH 3400-2/3
SFH 3401
SFH 3401-2/3
SFH 3201
SFH 3201-2/3
Type
SFH 3600
SFH 3600-2/3
SFH 3600-3/4
SFH 3605
SFH 3605-2/3
SFH 3605-3/4
Type
SFH 331-JK
http://catalog.osram-os.com
http://catalog.osram-os.com
For more detailed product information and Technical Datasheets, please visit http://catalog.osram-os.com
Half
angle
ϕ
[°]
± 60
± 60
± 60
Half
angle
ϕ
[°]
± 20
± 20
Emitter
λ
[nm]
635
Detector
Radiant sen-
sitive area
typ.
[mm
0.038
peak
2
]
typ
Radiant
sensitive
area typ.
[mm
0.55
0.55
0.55
Radiant
sensitive
area typ.
[mm
0.04
0.04
2
2
]
]
Detector/Emitter in Multi TOPLED package
Half angle
ϕ
[°]
± 60
I
[µA]
≥ 16
PCE
I
[µA]
63 ... 320
100 ... 320
63 ... 320
100 ... 320
63 ... 320
100 ... 320
I
[µA]
100 ... 500
100 ... 320
160 ... 500
100 ... 500
100 ... 320
160 ... 500
PCE
PCE
I
[mcd]
6 (4 ... 12.5)
Measure-
ment cond.
λ = 950 nm, E
= 0.1 mW/cm
V
V
CE
Measurement
cond.
λ = 950 nm, E
0.1 mW/cm
5 V
λ = 950 nm, E
0.1 mW/cm
5 V
λ = 950 nm, E
0.1 mW/cm
5 V
Measurement
cond.
λ = 950 nm, E
0.1 mW/cm
5 V
λ = 950 nm, E
0.1 mW/cm
5 V
= 5 V
SMT Transistors in low profile, narrow angle MIDLED package
2
e
,
2
2
2
2
2
Measure-
ment cond.
I
V
[V]
35
, V
, V
, V
, V
, V
F
CE
e
e
e
e
e
= 10 mA
CE
CE
CE
CE
CE
=
=
=
=
=
=
=
=
=
=
max.
V
max.
[V]
20
20
20
V
max.
[V]
35
35
CE
CE
V
[V]
2 (≤ 2.6)
λ
[nm]
440 ... 1150
10%
F
λ
[nm]
460 ... 1080
460 ... 1080
460 ... 1080
λ
[nm]
500 ... 1100
500 ... 1100
10%
10%
typ.
typ.
typ.
Measure-
ment cond.
I
t
[µs]
7
F
r
, t
t
[µs]
24
29
24
29
24
29
t
[µs]
45
37
57
45
37
57
= 10 mA
r
r
, t
, t
f
f
f
typ
typ
typ
Ordering Code
Q65110A2629
Q65110A2634
Q65110A2635
Q65110A2644
Q65110A1207
Q65110A2479
Ordering Code
Q65110A1573
Q65110A2665
Q65110A2666
Q65110A1574
Q65110A2663
Q65110A2664
Ordering Code
Q65110A2821
Package
Fig.
7
8
9
Package
Fig.
10
10
Package
Fig.
11