TSHG8200 Vishay, TSHG8200 Datasheet - Page 3

• Manufacturer Part Number: TSHG8200
• Description: EMITTER IR 5MM HI SPEED 830NM
• Manufacturer: Vishay

Specifications of TSHG8200

• Radiant Intensity: 1600 mW/sr
• Viewing Angle: 20°
• Current - Dc Forward (if): 100mA
• Radiant Intensity (ie) Min @ If: 80mW/sr @ 100mA
• Wavelength: 830nm
• Voltage - Forward (vf) Typ: 1.5V
• Orientation: Top View
• Mounting Type: Through Hole
• Package / Case: Radial, 5mm Dia (T 1 3/4)
• Maximum Forward Current: 100 mA
• Maximum Power Dissipation: 250 mW
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Lens Shape: Circular
• Peak Wavelength: 830nm
• Forward Current If(av): 100mA
• Rise Time: 20ns
• Fall Time Tf: 13ns
• Supply Voltage Range: 1.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 751-1214

BASIC CHARACTERISTICS
T
Document Number: 84755
Rev. 1.2, 02-Jul-09
amb
= 25 °C, unless otherwise specified
Fig. 3 - Pulse Forward Current vs. Pulse Duration
16032
18873
16031
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 5 - Radiant Intensity vs. Forward Current
1000
1000
1000
100
100
100
0.1
10
10
1
1
0.01
0
1
V
F
I
0.1
F
1
t
- Forward Voltage (V)
P
- Forward Current (mA)
10
- Pulse Duration (ms)
t
P
/T = 0.01
1
2
100
t
For technical questions, contact:
t
P
P
/T = 0.001
0.02
= 100 µs
0.05
T
0.2
0.5
High Speed Infrared Emitting Diode,
10
amb
3
830 nm, GaAlAs Double Hetero
< 50 °C
0.1
1000
100
4
[e-mail]
Fig. 8 - Relative Radiant Intensity vs. Angular Displacement
16971
16972_1
15989
Fig. 7 - Relative Radiant Power vs. Wavelength
1000
1.25
0.75
0.25
100
Fig. 6 - Radiant Power vs. Forward Current
1.0
0.5
0.1
1.0
0.9
0.8
0.7
10
1
0
740
1
0.6
0.4
I
F
- Forward Current (mA)
Vishay Semiconductors
800
λ- Wavelength (nm)
1 0
0.2
0°
0
100
10°
TSHG8200
900
20°
1000
www.vishay.com
30°
40°
50°
60°
70°
80°
3