TSHG8200 Vishay, TSHG8200 Datasheet
TSHG8200
Specifications of TSHG8200
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TSHG8200 Summary of contents
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... High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero DESCRIPTION TSHG8200 is an infrared, 830 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. PRODUCT SUMMARY COMPONENT I (mW/sr) e TSHG8200 180 Note Test conditions see table “Basic Characteristics” ...
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... TSHG8200 Vishay Semiconductors 200 180 160 140 120 R = 230 K/W thJA 100 100 T - Ambient Temperature (°C) 21142 amb Fig Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER Forward voltage Temperature coefficient Reverse current Junction capacitance Radiant intensity Radiant power Temperature coefficient of φ ...
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... GaAlAs Double Hetero T < 50 °C amb 0.05 0.1 0.2 0.5 10 100 16971 3 4 16972_1 1000 15989 Fig Relative Radiant Intensity vs. Angular Displacement emittertechsupport@vishay.com TSHG8200 Vishay Semiconductors 1000 100 100 1000 I - Forward Current (mA) F Fig Radiant Power vs. Forward Current 1.25 1.0 0.75 ...
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... TSHG8200 Vishay Semiconductors PACKAGE DIMENSIONS in millimeters A + 0.15 0.5 - 0.05 6.544-5259.02-4 Issue: 8; 19.05.09 95 10917 www.vishay.com For technical questions, contact: 4 High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero C + 0.2 0.6 - 0.1 2.54 nom. emittertechsupport@vishay.com R 2.49 (sphere) Area not plane 5 ± 0.15 technical drawings ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...