TSFF5210 Vishay, TSFF5210 Datasheet
TSFF5210
Specifications of TSFF5210
Related parts for TSFF5210
TSFF5210 Summary of contents
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... High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSFF5210 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package. DH technology combines high speed with high radiant power at wavelength of 870 nm. Features • High modulation bandwidth (23 MHz) • ...
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... TSFF5210 Vishay Semiconductors Electrical Characteristics °C, unless otherwise specified amb Parameter Forward voltage I = 100 mA Temp. coefficient 100 Reverse current Junction capacitance MHz Optical Characteristics °C, unless otherwise specified amb Parameter Radiant intensity I = 100 mA Radiant power I = 100 mA Temp. coefficient of φ 100 Angle of half intensity ...
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... Figure 6. Relative Radiant Power vs. Wavelength 3 4 15989 Figure 7. Relative Radiant Intensity vs. Angular Displacement 1000 14256 TSFF5210 Vishay Semiconductors 1.25 1.0 0.75 0.5 0.25 0 980 780 880 λ - Wavelength (nm) 0° 10° 20° 1.0 ...
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... TSFF5210 Vishay Semiconductors Package Dimensions in mm www.vishay.com 4 15909 Document Number 81090 Rev. 1.5, 28-Nov-06 ...
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... Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 81090 Rev. 1.5, 28-Nov-06 and may do so without further notice. TSFF5210 Vishay Semiconductors www.vishay.com 5 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...