TSFF5210 Vishay, TSFF5210 Datasheet
TSFF5210
Specifications of TSFF5210
Related parts for TSFF5210
TSFF5210 Summary of contents
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... High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero DESCRIPTION TSFF5210 is an infrared, 870 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. PRODUCT SUMMARY COMPONENT I (mW/sr) e TSFF5210 180 Note Test conditions see table “Basic Characteristics” ...
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... TSFF5210 Vishay Semiconductors 200 180 160 140 120 R = 230 K/W thJA 100 100 T - Ambient Temperature (°C) 21142 amb Fig Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER Forward voltage Temperature coefficient Reverse current Junction capacitance Radiant intensity Radiant power Temperature coefficient of φ ...
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... Fig Relative Radiant Power vs. Wavelength 3 4 15989 Fig Relative Radiant Intensity vs. Angular Displacement 1000 14256 emittertechsupport@vishay.com TSFF5210 Vishay Semiconductors 1.25 1.0 0.75 0.5 0.25 0 980 780 880 λ - Wavelength (nm) 0° 10° 20° 1.0 ...
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... TSFF5210 Vishay Semiconductors PACKAGE DIMENSIONS in millimeters A + 0.15 0.5 - 0.05 6.544-5258.09-4 Issue: 4; 19.05.09 15909 www.vishay.com For technical questions, contact: 4 High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero C 1.1 ± 0.25 2.54 nom. emittertechsupport@vishay.com R2.49 (sphere) Area not plane Ø 5 ± 0.15 ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...