TSAL6100 Vishay, TSAL6100 Datasheet

EMITTER IR 5MM HI EFF 940NM

TSAL6100

Manufacturer Part Number
TSAL6100
Description
EMITTER IR 5MM HI EFF 940NM
Manufacturer
Vishay
Datasheets

Specifications of TSAL6100

Rise Time
800 ns
Radiant Intensity
130 mW/sr
Viewing Angle
20°
Current - Dc Forward (if)
100mA
Radiant Intensity (ie) Min @ If
80mW/sr @ 100mA
Wavelength
940nm
Voltage - Forward (vf) Typ
1.35V
Orientation
Top View
Mounting Type
Through Hole
Package / Case
Radial, 5mm Dia (T 1 3/4)
Beam Angle
+/- 10
Maximum Forward Current
100 mA
Maximum Power Dissipation
210 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 55 C
Fall Time
800 ns
Forward Current
100 mA
Forward Voltage
1.35 V
Lens Shape
Circular
Mounting Style
Through Hole
Operating Voltage
1.6 V
Peak Wavelength
940nm
Forward Current If(av)
100mA
Fall Time Tf
800ns
Supply Voltage Range
1.35V To 3V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
751-1203

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TSAL6100
Manufacturer:
RENESAS
Quantity:
101
DESCRIPTION
TSAL6100 is an infrared, 940 nm emitting diode in
GaAlAs/GaAs technology with high radiant power molded in
a blue-gray plastic package.
Note
Test conditions see table “Basic Characteristics”
Note
MOQ: minimum order quantity
Note
T
Document Number: 81009
Rev. 1.6, 29-Jun-09
amb
PRODUCT SUMMARY
COMPONENT
TSAL6100
ORDERING INFORMATION
ORDERING CODE
TSAL6100
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
= 25 °C, unless otherwise specified
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
I
e
For technical questions, contact:
(mW/sr)
130
J-STD-051, leads 7 mm soldered
PACKAGING
t ≤ 5 s, 2 mm from case
t
p
94 8389
TEST CONDITION
/T = 0.5, t
Bulk
t
p
on PCB
= 100 µs
p
= 100 µs
ϕ (deg)
± 10
emittertechsupport@vishay.com
MOQ: 4000 pcs, 4000 pcs/bulk
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): ∅ 5
• Peak wavelength: λ
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 10°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Compliant to RoHS directive 2002/95/EC and in
• Halogen-free according to IEC 61249-2-21 definition
APPLICATIONS
• Infrared remote control units with high power reqirements
• Free air transmission systems
• Infrared source for optical counters and card readers
• IR source for smoke detectors
accordance to WEEE 2002/96/EC
SYMBOL
REMARKS
R
T
I
T
T
I
FSM
V
P
amb
I
FM
T
thJA
stg
F
sd
R
V
j
λ
P
940
(nm)
p
Vishay Semiconductors
= 940 nm
- 40 to + 100
- 40 to + 85
VALUE
100
200
160
100
260
230
1.5
5
PACKAGE FORM
TSAL6100
T-1¾
t
r
www.vishay.com
800
(ns)
UNIT
K/W
mW
mA
mA
°C
°C
°C
°C
V
A
1

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TSAL6100 Summary of contents

Page 1

... High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs DESCRIPTION TSAL6100 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power molded in a blue-gray plastic package. PRODUCT SUMMARY COMPONENT I (mW/sr) e TSAL6100 130 Note Test conditions see table “Basic Characteristics” ORDERING INFORMATION ...

Page 2

... TSAL6100 Vishay Semiconductors 180 160 140 120 100 R = 230 K/W 80 thJA 100 T - Ambient Temperature (°C) 21211 amb Fig Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER Forward voltage Temperature coefficient Reverse current Junction capacitance Radiant intensity Radiant power Temperature coefficient of φ ...

Page 3

... Rev. 1.6, 29-Jun-09 High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs 1000 13602 7993 Fig Rel. Radiant Intensity/Power vs. Ambient Temperature 14291 Fig Relative Radiant Power vs. Wavelength emittertechsupport@vishay.com TSAL6100 Vishay Semiconductors 100 Forward Current (mA) F Fig Radiant Power vs. Forward Current 1.6 1.2 ...

Page 4

... TSAL6100 Vishay Semiconductors 0° 10° 1.0 0.9 0.8 0.7 0.6 0.4 0.2 0 15989 Fig Relative Radiant Intensity vs. Angular Displacement PACKAGE DIMENSIONS in millimeters A + 0.15 0.5 - 0.05 6.544-5259.08-4 Issue: 3; 19.05.09 14436 www.vishay.com For technical questions, contact: 4 High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs 20° ...

Page 5

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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