TSAL6100 Vishay, TSAL6100 Datasheet
TSAL6100
Specifications of TSAL6100
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TSAL6100 Summary of contents
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... High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs DESCRIPTION TSAL6100 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power molded in a blue-gray plastic package. PRODUCT SUMMARY COMPONENT I (mW/sr) e TSAL6100 130 Note Test conditions see table “Basic Characteristics” ORDERING INFORMATION ...
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... TSAL6100 Vishay Semiconductors 180 160 140 120 100 R = 230 K/W 80 thJA 100 T - Ambient Temperature (°C) 21211 amb Fig Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER Forward voltage Temperature coefficient Reverse current Junction capacitance Radiant intensity Radiant power Temperature coefficient of φ ...
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... Rev. 1.6, 29-Jun-09 High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs 1000 13602 7993 Fig Rel. Radiant Intensity/Power vs. Ambient Temperature 14291 Fig Relative Radiant Power vs. Wavelength emittertechsupport@vishay.com TSAL6100 Vishay Semiconductors 100 Forward Current (mA) F Fig Radiant Power vs. Forward Current 1.6 1.2 ...
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... TSAL6100 Vishay Semiconductors 0° 10° 1.0 0.9 0.8 0.7 0.6 0.4 0.2 0 15989 Fig Relative Radiant Intensity vs. Angular Displacement PACKAGE DIMENSIONS in millimeters A + 0.15 0.5 - 0.05 6.544-5259.08-4 Issue: 3; 19.05.09 14436 www.vishay.com For technical questions, contact: 4 High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs 20° ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...