TSAL6100 Vishay, TSAL6100 Datasheet - Page 3

EMITTER IR 5MM HI EFF 940NM

TSAL6100

Manufacturer Part Number
TSAL6100
Description
EMITTER IR 5MM HI EFF 940NM
Manufacturer
Vishay
Datasheets

Specifications of TSAL6100

Rise Time
800 ns
Radiant Intensity
130 mW/sr
Viewing Angle
20°
Current - Dc Forward (if)
100mA
Radiant Intensity (ie) Min @ If
80mW/sr @ 100mA
Wavelength
940nm
Voltage - Forward (vf) Typ
1.35V
Orientation
Top View
Mounting Type
Through Hole
Package / Case
Radial, 5mm Dia (T 1 3/4)
Beam Angle
+/- 10
Maximum Forward Current
100 mA
Maximum Power Dissipation
210 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 55 C
Fall Time
800 ns
Forward Current
100 mA
Forward Voltage
1.35 V
Lens Shape
Circular
Mounting Style
Through Hole
Operating Voltage
1.6 V
Peak Wavelength
940nm
Forward Current If(av)
100mA
Fall Time Tf
800ns
Supply Voltage Range
1.35V To 3V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
751-1203

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Manufacturer
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BASIC CHARACTERISTICS
T
Document Number: 81009
Rev. 1.6, 29-Jun-09
amb
= 25 °C, unless otherwise specified
96 11987
14438
Fig. 3 - Pulse Forward Current vs. Pulse Duration
13600
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 5 - Radiant Intensity vs. Forward Current
1000
10
10
10
10
10
10
10
10
100
0.1
10
0
4
3
2
1
1
1
0
-1
10
10
0
-2
0.1
1.0
0.5
0
0.05
V
F
10
10
- Forward Voltage (V)
1
I
t
F
p
t
-1
p
/T = 0.01
1
- Forward Current (mA)
- Pulse Duration (ms)
I
FSM
= 1 A (Single Pulse)
10
10
2
0
2
t
t
P
For technical questions, contact:
P
/T = 0.001
= 100 µs
High Power Infrared Emitting Diode,
10
10
3
1
3
10
940 nm, GaAlAs/GaAs
10
4
2
4
emittertechsupport@vishay.com
Fig. 7 - Rel. Radiant Intensity/Power vs. Ambient Temperature
13602
94 7993
14291
Fig. 8 - Relative Radiant Power vs. Wavelength
1000
1.25
0.75
0.25
100
Fig. 6 - Radiant Power vs. Forward Current
1.0
0.5
0.1
1.6
1.2
0.8
0.4
10
- 10
1
0
0
10
890
0
0
T
10
amb
I
F
10
- Ambient Temperature (°C)
- Forward Current (mA)
Vishay Semiconductors
1
λ
- Wavelength (nm)
I
F
50
= 100 mA
10
940
I
F
2
= 20 mA
100
10
TSAL6100
3
www.vishay.com
10
990
140
4
3

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