TSAL6100 Vishay, TSAL6100 Datasheet - Page 3
TSAL6100
Manufacturer Part Number
TSAL6100
Description
EMITTER IR 5MM HI EFF 940NM
Manufacturer
Vishay
Specifications of TSAL6100
Rise Time
800 ns
Radiant Intensity
130 mW/sr
Viewing Angle
20°
Current - Dc Forward (if)
100mA
Radiant Intensity (ie) Min @ If
80mW/sr @ 100mA
Wavelength
940nm
Voltage - Forward (vf) Typ
1.35V
Orientation
Top View
Mounting Type
Through Hole
Package / Case
Radial, 5mm Dia (T 1 3/4)
Beam Angle
+/- 10
Maximum Forward Current
100 mA
Maximum Power Dissipation
210 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 55 C
Fall Time
800 ns
Forward Current
100 mA
Forward Voltage
1.35 V
Lens Shape
Circular
Mounting Style
Through Hole
Operating Voltage
1.6 V
Peak Wavelength
940nm
Forward Current If(av)
100mA
Fall Time Tf
800ns
Supply Voltage Range
1.35V To 3V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
751-1203
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
TSAL6100
Manufacturer:
RENESAS
Quantity:
101
Part Number:
TSAL6100
Manufacturer:
VISHAY/威世
Quantity:
20 000
BASIC CHARACTERISTICS
T
Document Number: 81009
Rev. 1.6, 29-Jun-09
amb
= 25 °C, unless otherwise specified
96 11987
14438
Fig. 3 - Pulse Forward Current vs. Pulse Duration
13600
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 5 - Radiant Intensity vs. Forward Current
1000
10
10
10
10
10
10
10
10
100
0.1
10
0
4
3
2
1
1
1
0
-1
10
10
0
-2
0.1
1.0
0.5
0
0.05
V
F
10
10
- Forward Voltage (V)
1
I
t
F
p
t
-1
p
/T = 0.01
1
- Forward Current (mA)
- Pulse Duration (ms)
I
FSM
= 1 A (Single Pulse)
10
10
2
0
2
t
t
P
For technical questions, contact:
P
/T = 0.001
= 100 µs
High Power Infrared Emitting Diode,
10
10
3
1
3
10
940 nm, GaAlAs/GaAs
10
4
2
4
emittertechsupport@vishay.com
Fig. 7 - Rel. Radiant Intensity/Power vs. Ambient Temperature
13602
94 7993
14291
Fig. 8 - Relative Radiant Power vs. Wavelength
1000
1.25
0.75
0.25
100
Fig. 6 - Radiant Power vs. Forward Current
1.0
0.5
0.1
1.6
1.2
0.8
0.4
10
- 10
1
0
0
10
890
0
0
T
10
amb
I
F
10
- Ambient Temperature (°C)
- Forward Current (mA)
Vishay Semiconductors
1
λ
- Wavelength (nm)
I
F
50
= 100 mA
10
940
I
F
2
= 20 mA
100
10
TSAL6100
3
www.vishay.com
10
990
140
4
3