MT4HTF6464AY-667E1 Micron Technology Inc, MT4HTF6464AY-667E1 Datasheet - Page 16

• Manufacturer Part Number: MT4HTF6464AY-667E1
• Description: MODULE DDR2 512MB 240-UDIMM
• Manufacturer: Micron Technology Inc

Specifications of MT4HTF6464AY-667E1

• Memory Type: DDR2 SDRAM
• Memory Size: 512MB
• Speed: 667MT/s
• Package / Case: 240-DIMM
• Main Category: DRAM Module
• Sub-category: DDR2 SDRAM
• Module Type: 240UDIMM
• Device Core Size: 64b
• Organization: 64Mx64
• Total Density: 512MByte
• Chip Density: 1Gb
• Access Time (max): 45ps
• Maximum Clock Rate: 667MHz
• Operating Supply Voltage (typ): 1.8V
• Operating Current: 880mA
• Number Of Elements: 4
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Operating Temp Range: 0C to 85C
• Operating Temperature Classification: Commercial
• Pin Count: 240
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1351

Table 13: DDR2 I
Values shown for MT47H64M16 DDR2 SDRAM only and are computed from values specified in the 1Gb (32 Meg x 16) com-
ponent data sheet
PDF: 09005aef80ed6fda
htf4c16_32_64x64ay – Rev. H 3/10 EN
Parameter
Operating one bank active-precharge current:
t
commands; Address bus inputs are switching; Data bus inputs are switching
Operating one bank active-read-precharge current: I
4, CL = CL (I
(I
Address bus inputs are switching; Data pattern is same as I
Precharge power-down current: All device banks idle;
CKE is LOW; Other control and address bus inputs are stable; Data bus
inputs are floating
Precharge quiet standby current: All device banks idle;
CKE is HIGH, S# is HIGH; Other control and address bus inputs are stable;
Data bus inputs are floating
Precharge standby current: All device banks idle;
HIGH, S# is HIGH; Other control and address bus inputs are switching; Da-
ta bus inputs are switching
Active power-down current: All device banks open;
=
puts are stable; Data bus inputs are floating
Active standby current: All device banks open;
t
mands; Other control and address bus inputs are switching; Data bus
inputs are switching
Operating burst write current: All device banks open; Continuous
burst writes; BL = 4, CL = CL (I
(I
Address bus inputs are switching; Data bus inputs are switching
Operating burst read current: All device banks open; Continuous burst
read, I
MAX (I
mands; Address bus inputs are switching; Data bus inputs are switching
Burst refresh current:
(I
trol and address bus inputs are switching; Data bus inputs are switching
Self refresh current: CK and CK# at 0V; CKE ≤ 0.2V; Other control and
address bus inputs are floating; Data bus inputs are floating
RC (I
RAS MAX (I
DD
DD
DD
t
CK (I
),
),
) interval; CKE is HIGH, S# is HIGH between valid commands; Other con-
DD
t
t
RCD =
RP =
OUT
DD
DD
),
),
t
); CKE is LOW; Other control and address bus in-
RAS =
= 0mA; BL = 4, CL = CL (I
t
t
DD
RP (I
RP =
DD
t
RCD (I
), AL = 0;
),
t
DD
t
RP =
t
RAS MIN (I
RP (I
); CKE is HIGH, S# is HIGH between valid commands;
DD
DD
t
DD
); CKE is HIGH, S# is HIGH between valid commands;
RP (I
Specifications and Conditions (Die Revision E) – 512MB
t
CK =
t
); CKE is HIGH, S# is HIGH between valid com-
CK =
DD
DD
); CKE is HIGH, S# is HIGH between valid com-
t
DD
CK (I
t
); CKE is HIGH, S# is HIGH between valid
CK (I
128MB, 256MB, 512MB (x64, SR) 240-Pin DDR2 SDRAM UDIMM
), AL = 0;
DD
DD
DD
),
), AL = 0;
); REFRESH command at every
t
RC =
t
CK =
t
RC (I
t
CK =
t
CK (I
DD
t
CK =
t
CK =
),
t
t
DD
CK (I
CK =
t
RAS =
),
t
CK
t
CK (I
t
t
RAS =
DD
CK (I
t
OUT
CK =
t
DD4W
t
CK (I
CK =
),
16
Fast PDN exit
MR[12] = 0
Slow PDN ex-
it MR[12] = 1
t
DD
RAS MIN
t
= 0mA; BL =
DD
RAS =
),
t
DD
t
CK (I
RAS MAX
),
t
t
CK (I
); CKE is
RAS =
t
RC =
t
RFC
t
DD
RAS
DD
Micron Technology, Inc. reserves the right to change products or specifications without notice.
);
);
Symbol
I
I
I
I
I
I
I
DD4W
I
I
DD2Q
DD2N
DD3N
I
I
DD2P
DD3P
DD4R
DD0
DD1
DD5
DD6
-80E/
-800
1260
1280
1120
600
700
300
320
160
340
28
40
28
1080
-667
© 2003 Micron Technology, Inc. All rights reserved.
540
520
260
280
120
300
800
880
28
40
28
I
DD
-53E
1000
Specifications
440
480
180
200
120
240
720
720
28
40
28
-40E
440
460
160
160
120
220
640
640
960
28
40
28
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA