MT4HTF6464AY-667E1 Micron Technology Inc, MT4HTF6464AY-667E1 Datasheet - Page 10

• Manufacturer Part Number: MT4HTF6464AY-667E1
• Description: MODULE DDR2 512MB 240-UDIMM
• Manufacturer: Micron Technology Inc

Specifications of MT4HTF6464AY-667E1

• Memory Type: DDR2 SDRAM
• Memory Size: 512MB
• Speed: 667MT/s
• Package / Case: 240-DIMM
• Main Category: DRAM Module
• Sub-category: DDR2 SDRAM
• Module Type: 240UDIMM
• Device Core Size: 64b
• Organization: 64Mx64
• Total Density: 512MByte
• Chip Density: 1Gb
• Access Time (max): 45ps
• Maximum Clock Rate: 667MHz
• Operating Supply Voltage (typ): 1.8V
• Operating Current: 880mA
• Number Of Elements: 4
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Operating Temp Range: 0C to 85C
• Operating Temperature Classification: Commercial
• Pin Count: 240
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1351

I
Table 10: DDR2 I
Values shown for MT47H16M16 DDR2 SDRAM only and are computed from values specified in the 256Mb (16 Meg x 16)
component data sheet
PDF: 09005aef80ed6fda
htf4c16_32_64x64ay – Rev. H 3/10 EN
Parameter
Operating one bank active-precharge current:
(I
mands; Address bus inputs are switching; Data bus inputs are switching
Operating one bank active-read-precharge current: I
4, CL = CL (I
t
dress bus inputs are switching; Data pattern is same as I
Precharge power-down current: All device banks idle;
CKE is LOW; Other control and address bus inputs are stable; Data bus in-
puts are floating
Precharge quiet standby current: All device banks idle;
CKE is HIGH, S# is HIGH; Other control and address bus inputs are stable;
Data bus inputs are floating
Precharge standby current: All device banks idle;
HIGH, S# is HIGH; Other control and address bus inputs are switching; Data
bus inputs are switching
Active power-down current: All device banks open;
t
are stable; Data bus inputs are floating
Active standby current: All device banks open;
t
mands; Other control and address bus inputs are switching; Data bus inputs
are switching
Operating burst write current: All device banks open; Continuous burst
writes; BL = 4, CL = CL (I
t
bus inputs are switching; Data bus inputs are switching
Operating burst read current: All device banks open; Continuous burst
read, I
MAX (I
Address bus inputs are switching; Data bus inputs are switching
Burst refresh current:
(I
trol and address bus inputs are switching; Data bus inputs are switching
Self refresh current: CK and CK# at 0V; CKE ≤ 0.2V; Other control and ad-
dress bus inputs are floating; Data bus inputs are floating
DD
RCD =
CK (I
RAS MAX (I
RP =
DD
DD
),
) interval; CKE is HIGH, S# is HIGH between valid commands; Other con-
DD
Specifications
t
t
RAS =
RP (I
OUT
DD
t
); CKE is LOW; Other control and address bus inputs
RCD (I
),
= 0mA; BL = 4, CL = CL (I
DD
t
DD
RP =
DD
t
); CKE is HIGH, S# is HIGH between valid commands; Address
RAS MIN (I
), AL = 0;
DD
),
); CKE is HIGH, S# is HIGH between valid commands; Ad-
t
t
RP =
RP (I
DD
DD
t
RP (I
Specifications and Conditions – 128MB
t
DD
DD
CK =
t
); CKE is HIGH, S# is HIGH between valid commands;
CK =
), AL = 0;
); CKE is HIGH, S# is HIGH between valid com-
DD
t
); CKE is HIGH, S# is HIGH between valid com-
CK (I
t
CK (I
128MB, 256MB, 512MB (x64, SR) 240-Pin DDR2 SDRAM UDIMM
DD
DD
DD
t
CK =
),
), AL = 0;
); REFRESH command at every
t
RC =
t
CK (I
t
RC (I
t
DD
CK =
),
DD
t
CK =
t
t
RAS =
CK =
),
t
t
CK (I
CK =
t
RAS =
t
DD4W
CK =
t
CK (I
t
DD
CK (I
t
OUT
t
CK =
t
RAS MAX (I
t
CK (I
CK =
),
10
t
DD
RAS MIN (I
t
= 0mA; BL =
Fast PDN exit
MR[12] = 0
Slow PDN exit
MR[12] = 1
DD
RAS =
),
t
DD
CK (I
),
t
t
CK (I
); CKE is
RAS =
t
RC =
t
RFC
t
DD
RAS
DD
DD
Micron Technology, Inc. reserves the right to change products or specifications without notice.
);
t
DD
),
);
RC
),
Symbol
I
I
I
I
I
I
I
DD4W
DD2Q
I
I
DD2N
DD3N
DD4R
I
I
DD2P
DD3P
DD0
DD1
DD5
DD6
-667
360
400
200
160
120
220
860
760
720
20
24
20
© 2003 Micron Technology, Inc. All rights reserved.
I
DD
-53E
320
360
140
140
100
160
720
640
680
20
24
20
Specifications
-40E
300
340
100
120
120
560
480
660
20
80
24
20
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA