MT8HTF6464HDY-667D3 Micron Technology Inc, MT8HTF6464HDY-667D3 Datasheet - Page 14
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MT8HTF6464HDY-667D3
Manufacturer Part Number
MT8HTF6464HDY-667D3
Description
MODULE DDR2 512MB 200SODIMM
Manufacturer
Micron Technology Inc
Datasheet
1.MT8HTF6464HDY-53EB3.pdf
(19 pages)
Specifications of MT8HTF6464HDY-667D3
Memory Type
DDR2 SDRAM
Memory Size
512MB
Speed
667MT/s
Package / Case
200-SODIMM
Main Category
DRAM Module
Sub-category
DDR2 SDRAM
Module Type
200SODIMM
Device Core Size
64b
Organization
64Mx64
Total Density
512MByte
Chip Density
512Mb
Maximum Clock Rate
667MHz
Operating Supply Voltage (typ)
1.8V
Operating Current
1.02A
Number Of Elements
8
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
200
Mounting
Socket
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Table 11: DDR2 I
Values shown for MT47H32M16 DDR2 SDRAM only and are computed from values specified in the 512Mb (32 Meg x 16)
component data sheet
PDF: 09005aef80ebed66
htf8c32_64_128x64hd.pdf - Rev. E 3/10 EN
Parameter
Operating bank interleave read current: All device banks interleaving
reads; I
=
HIGH, S# is HIGH between valid commands; Address bus inputs are stable
during deselects; Data bus inputs are switching
t
CK (I
OUT
DD
),
= 0mA; BL = 4, CL = CL (I
t
RC =
t
RC (I
DD
DD
Specifications and Conditions – 512MB (Continued)
),
t
RRD =
t
RRD (I
DD
), AL =
DD
),
256MB, 512MB, 1GB (x64, DR) 200-Pin DDR2 SODIMM
t
t
RCD (I
RCD =
DD
t
RCD (I
) - 1 ×
DD
14
t
CK (I
); CKE is
DD
);
t
CK
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Symbol
I
DD7
1
-80E/-
1500
800
1420
-667
© 2006 Micron Technology, Inc. All rights reserved.
I
DD
1380
-53E
Specifications
-40E
1360
Units
mA