MT8HTF6464HDY-667D3 Micron Technology Inc, MT8HTF6464HDY-667D3 Datasheet - Page 11
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MT8HTF6464HDY-667D3
Manufacturer Part Number
MT8HTF6464HDY-667D3
Description
MODULE DDR2 512MB 200SODIMM
Manufacturer
Micron Technology Inc
Datasheet
1.MT8HTF6464HDY-53EB3.pdf
(19 pages)
Specifications of MT8HTF6464HDY-667D3
Memory Type
DDR2 SDRAM
Memory Size
512MB
Speed
667MT/s
Package / Case
200-SODIMM
Main Category
DRAM Module
Sub-category
DDR2 SDRAM
Module Type
200SODIMM
Device Core Size
64b
Organization
64Mx64
Total Density
512MByte
Chip Density
512Mb
Maximum Clock Rate
667MHz
Operating Supply Voltage (typ)
1.8V
Operating Current
1.02A
Number Of Elements
8
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
200
Mounting
Socket
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
I
Table 10: DDR2 I
Values shown for MT47H16M16 DDR2 SDRAM only and are computed from values specified in the 256Mb (16 Meg x 16)
component data sheet
PDF: 09005aef80ebed66
htf8c32_64_128x64hd.pdf - Rev. E 3/10 EN
Parameter
Operating one bank active-precharge current:
(I
Address bus inputs are switching; Data bus inputs are switching
Operating one bank active-read-precharge current: I
= CL (I
t
puts are switching; Data pattern is same as I
Precharge power-down current: All device banks idle;
LOW; Other control and address bus inputs are stable; Data bus inputs are float-
ing
Precharge quiet standby current: All device banks idle;
is HIGH, S# is HIGH; Other control and address bus inputs are stable; Data bus
inputs are floating
Precharge standby current: All device banks idle;
HIGH, S# is HIGH; Other control and address bus inputs are switching; Data bus
inputs are switching
Active power-down current: All device banks open;
t
stable; Data bus inputs are floating
Active standby current: All device banks open;
MAX (I
Other control and address bus inputs are switching; Data bus inputs are switching
Operating burst write current: All device banks open; Continuous burst
writes; BL = 4, CL = CL (I
t
are switching; Data bus inputs are switching
Operating burst read current: All device banks open; Continuous burst read,
I
t
inputs are switching; Data bus inputs are switching
Burst refresh current:
interval; CKE is HIGH, S# is HIGH between valid commands; Other control and
address bus inputs are switching; Data bus inputs are switching
Self refresh current: CK and CK# at 0V; CKE ≤ 0.2V; Other control and ad-
dress bus inputs are floating; Data bus inputs are floating
DD
RCD (I
CK (I
RP (I
OUT
RP =
DD
),
= 0mA; BL = 4, CL = CL (I
DD
DD
Specifications
t
t
RAS =
DD
RP (I
DD
DD
); CKE is HIGH, S# is HIGH between valid commands; Address bus inputs
); CKE is LOW; Other control and address bus inputs are
), AL = 0;
); CKE is HIGH, S# is HIGH between valid commands; Address bus in-
),
DD
t
RP =
t
); CKE is HIGH, S# is HIGH between valid commands; Address bus
RAS MIN (I
t
RP (I
t
CK =
DD
DD
Specifications and Conditions – 256MB
DD
DD
t
t
); CKE is HIGH, S# is HIGH between valid commands;
CK (I
CK =
), AL = 0;
); CKE is HIGH, S# is HIGH between valid commands;
DD
DD
t
CK (I
), AL = 0;
),
t
RC =
DD
t
CK =
); REFRESH command at every
t
RC (I
t
CK =
t
CK (I
DD4W
DD
256MB, 512MB, 1GB (x64, DR) 200-Pin DDR2 SODIMM
t
),
DD
CK (I
t
),
RAS =
t
CK =
t
t
RAS =
CK =
DD
t
CK =
),
t
t
CK =
t
t
RAS MIN (I
CK (I
RAS =
t
CK (I
t
OUT
t
CK =
t
RAS MAX (I
t
CK (I
CK =
11
DD
= 0mA; BL = 4, CL
DD
t
),
t
DD
RAS MAX (I
CK (I
),
Fast PDN exit
MR[12] = 0
Slow PDN exit
MR[12] = 1
t
t
CK (I
); CKE is
RAS =
t
DD
RC =
t
RFC (I
DD
),
DD
DD
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t
); CKE is
RCD =
t
t
),
); CKE
RC
RAS
DD
t
RP =
DD
)
),
Symbol
I
I
I
I
I
I
I
DD4W
I
I
DD2Q
DD2N
DD3N
I
I
DD2P
DD3P
DD4R
DD0
DD1
DD5
DD6
1
1
2
2
2
2
1
2
2
2
1
-667
1440
380
420
400
320
240
440
880
780
40
48
40
© 2006 Micron Technology, Inc. All rights reserved.
I
DD
-53E
1360
340
380
280
280
200
320
740
660
40
48
40
Specifications
1320
-40E
320
360
200
240
160
240
580
500
40
48
40
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA