MT16HTF12864HY-53ED3 Micron Technology Inc, MT16HTF12864HY-53ED3 Datasheet - Page 10

• Manufacturer Part Number: MT16HTF12864HY-53ED3
• Description: MODULE DDR2 1GB 200SODIMM
• Manufacturer: Micron Technology Inc

Specifications of MT16HTF12864HY-53ED3

• Memory Type: DDR2 SDRAM
• Memory Size: 1GB
• Speed: 533MT/s
• Package / Case: 200-SODIMM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 11:
PDF: 09005aef818e4054/Source: 09005aef818e40d2
HTF16C128_256x64H.fm - Rev. B 11/06 EN
Parameter/Condition
Operating one bank active-precharge current;
t
commands; Address bus inputs are switching; Data bus inputs are switching
Operating one bank active-read-precharge current; I
CL = CL (I
t
bus inputs are switching; Data pattern is same as I
Precharge power-down current; All device banks idle;
is LOW; Other control and address bus inputs are stable; Data bus inputs are
floating
Precharge quiet standby current; All device banks idle;
CKE is HIGH, S# is HIGH; Other control and address bus inputs are stable; Data
bus inputs are floating
Precharge standby current; All device banks idle;
HIGH, S# is HIGH; Other control and address bus inputs are switching; Data
bus inputs are switching
Active power-down current; All device banks open;
t
are stable; Data bus inputs are floating
Active standby current; All device banks open;
MAX (I
Other control and address bus inputs are switching; Data bus inputs are
switching
Operating burst write current; All device banks open, continuous burst
writes; BL = 4, CL = CL (I
=
inputs are switching; Data bus inputs are switching
Operating burst read current; All device banks open, continuous burst
reads, I
MAX (I
Address bus inputs are switching; Data bus inputs are switching
Burst refresh current;
(I
control and address bus inputs are switching; Data bus inputs are switching
Self refresh current; CK and CK# at 0V; CKE ≤ 0.2V; Other control and
address bus inputs are floating; Data bus inputs are floating
Operating bank interleave read current; All device banks interleaving
reads, I
t
HIGH, S# is HIGH between valid commands; Address bus inputs are stable
during deselects; Data bus inputs are switching; See I
RC =
RCD =
CK (I
CK =
DD
t
RP (I
) interval; CKE is HIGH, S# is HIGH between valid commands; Other
DD
t
t
RC (I
CK (I
DD
DD
DD
t
OUT
OUT
); CKE is LOW; Other control and address bus inputs
RCD (I
DD
),
); CKE is HIGH, S# is HIGH between valid commands; Address bus
),
= 0mA; BL = 4, CL = CL (I
DD
t
= 0mA; BL = 4, CL = CL (I
t
DD
), AL = 0;
RP =
RP =
),
DDR2 I
Values shown for DDR2 SDRAM components only
),
DD
t
t
RAS =
RC =
); CKE is HIGH, S# is HIGH between valid commands; Address
t
t
RP(I
RP (I
Notes:
t
t
DD
CK =
DD
DD
RC (I
t
RAS MIN (I
DD
); CKE is HIGH, S# is HIGH between valid commands;
t
); CKE is HIGH, S# is HIGH between valid commands;
CK =
Specifications and Conditions – 2GB (die revision E)
), AL = 0;
DD
t
CK (I
1. Value calculated as one module rank in this operating condition, and all other module ranks in
2. Value calculated reflects all module ranks in this operating condition.
),
t
CK (I
t
I
RRD =
DD
DD
DD
2
t
),
DD
P
CK =
DD
DD
); CKE is HIGH, S# is HIGH between valid
(CKE LOW) mode.
t
RC =
), AL =
), AL = 0;
); Refresh the command at every
t
RRD (I
t
CK (I
t
RC (I
t
RCD (I
DD
DD
t
),
DD
CK =
),
t
t
DD
CK =
t
RCD =
),
RAS =
DD
1GB, 2GB: (x64, DR) 200-Pin DDR2 SDRAM SODIMM
t
CK =
t
t
4W
DD
RAS =
CK =
t
) - 1 ×
CK (I
t
7 conditions for detail
t
CK =
CK (I
t
t
t
t
RCD (I
RAS MAX (I
OUT
CK =
CK (I
t
DD
t
CK (I
t
CK =
10
RAS MIN (I
t
DD
CK (I
),
= 0mA; BL = 4,
DD
t
Fast PDN Exit
MR[12] = 0
Slow PDN Exit
MR[12] = 1
),
t
DD
CK (I
DD
RAS =
t
t
),
DD
CK (I
RAS =
); CKE is
); CKE is
);
DD
DD
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
t
DD
); CKE
RAS
t
),
t
RFC
);
RAS
),
t
RP
Symbol
I
I
I
I
I
I
I
DD
DD
DD
DD
DD
I
I
DD
DD
I
I
I
DD
DD
DD
DD
DD
4W
2Q
2N
3N
4R
2P
3P
0
1
5
6
7
1
1
2
2
1
2
2
1
2
2
2
1
-80E/
1336 1136 1056
1336 1136 1056
3760 3440 3360 3280
2736 2296 2216 2136
-800 -667 -53E -40E Units
Electrical Specifications
776
936
112
800
800
640
160
960
112
©2004 Micron Technology, Inc. All rights reserved.
736
856
112
640
640
480
160
880
112
616
816
112
640
640
480
160
720
112
616
776
112
560
560
480
160
640
896
896
112
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA