MT9HTF6472FY-667B4E3 Micron Technology Inc, MT9HTF6472FY-667B4E3 Datasheet - Page 7

• Manufacturer Part Number: MT9HTF6472FY-667B4E3
• Description: MODULE DDR2 512MB 240FBDIMM
• Manufacturer: Micron Technology Inc

Specifications of MT9HTF6472FY-667B4E3

• Memory Type: DDR2 SDRAM
• Memory Size: 512MB
• Speed: 667MT/s
• Package / Case: 240-FBDIMM
• Main Category: DRAM Module
• Sub-category: DDR2 SDRAM
• Module Type: 240FBDIMM
• Device Core Size: 72b
• Organization: 64Mx72
• Total Density: 512MByte
• Chip Density: 512Mb
• Package Type: FBDIMM
• Maximum Clock Rate: 667MHz
• Operating Supply Voltage (typ): 1.8V
• Number Of Elements: 9
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Operating Temp Range: 0C to 95C
• Operating Temperature Classification: Commercial
• Pin Count: 240
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

General Description
Advanced Memory Buffer
PDF: 09005aef81a2f1eb/Source: 09005aef81a2f20c
HTF9C64_128x72F.fm - Rev. B 9/07 EN
The Micron
FBDIMMs. The following specifications contain detailed information on FBDIMM
design, interfaces, and theory of operation, and are listed here for the system designers
convenience. Refer to the JEDEC Web site for available specifications.
• FBDIMM Design Specification – pending JEDEC approval
• FBDIMM: Architecture and Protocol – JESD206
• FBDIMM: Advanced Memory Buffer (AMB) Specification – JESD82-20
• Design for Test, Design for Validation (DFx) Specification
• Serial Presence-Detect (SPD) for Fully Buffered DIMM – JEDEC Standard No. 21-C
The MT9HTF6472F and MT9HTF12872F DDR2 SDRAM modules are high-bandwidth,
large-capacity channel solutions that have a narrow host interface. FBDIMMs use DDR2
SDRAM devices isolated from the channel behind an AMB buffer on the FBDIMM.
Memory-device capacity remains high and total memory capacity scales with DDR2
SDRAM bit density.
As shown in Figure 2 on page 5, the FBDIMM channel provides a communication path
from a host controller to an array of DDR2 SDRAM devices, with the DDR2 SDRAM
devices buffered behind an AMB device. The physical isolation of the DDR2 SDRAM
devices from the channel provides the flexibility needed to enhance the communication
path and significantly increase the reliability and availability of the memory subsystem.
The AMB isolates the DDR2 SDRAM devices from the channel. This single-chip AMB
component, located in the center of each FBDIMM, acts as a repeater and buffer for all
signals and commands exchanged between the host controller and DDR2 SDRAM
devices, including data input and output. The AMB communicates with the host
controller and adjacent FBDIMMs on a system board using an industry-standard, high-
speed, differential, point-to-point interface at 1.5V. The AMB also allows buffering of
memory traffic to support large memory capacities. Refer to the JEDEC AMB FBDIMM:
JESD82-20 specification for further information.
page 4.1.2.7-1
®
FBDIMM adheres to the currently proposed industry specifications for
512MB, 1GB (x72, SR) 240-Pin DDR2 SDRAM FBDIMM
7
Micron Technology, Inc., reserves the right to change products or specifications without notice.
General Description
©2005 Micron Technology, Inc. All rights reserved.