MT9VDDT6472Y-265D2 Micron Technology Inc, MT9VDDT6472Y-265D2 Datasheet - Page 2
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MT9VDDT6472Y-265D2
Manufacturer Part Number
MT9VDDT6472Y-265D2
Description
MODULE SDRAM DDR 512MB 184DIMM
Manufacturer
Micron Technology Inc
Datasheet
1.MT9VDDT6472Y-265D2.pdf
(16 pages)
Specifications of MT9VDDT6472Y-265D2
Memory Type
DDR SDRAM
Memory Size
512MB
Speed
266MT/s
Package / Case
184-DIMM
Main Category
DRAM Module
Sub-category
DDR SDRAM
Module Type
184RDIMM
Device Core Size
72b
Organization
64Mx72
Total Density
512MByte
Chip Density
512Mb
Access Time (max)
750ps
Maximum Clock Rate
266MHz
Operating Supply Voltage (typ)
2.5V
Operating Current
1.305A
Number Of Elements
9
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
184
Mounting
Socket
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT9VDDT6472Y-265D2
Manufacturer:
ITT
Quantity:
6 965
Table 1:
Table 2:
Table 3:
Table 4:
PDF: 09005aef80e119b2/Source: 09005aef80e11976
DD9C16_32_64x72.fm - Rev. D 1/08 EN
Parameter
Part Number
Part Number
Refresh count
Row address
Device bank address
Device configuration
Column address
Module rank address
MT9VDDT1672G-335__
MT9VDDT1672Y-335__
MT9VDDT1672G-26A__
MT9VDDT1672G-265__
MT9VDDT1672Y-265__
MT9VDDT3272G-335__
MT9VDDT3272G-262__
MT9VDDT3272G-26A__
MT9VDDT3272Y-26A__
MT9VDDT3272G-265__
MT9VDDT3272Y-265__
Speed
Grade
-26A
-335
-262
-265
Key Timing Parameters
Addressing
Part Numbers and Timing Parameters – 128MB Modules
Base device: MT46V16M8,
Part Numbers and Timing Parameters – 256MB Modules
Base device: MT46V32M8,
2
2
Nomenclature
Notes:
Notes:
Industry
PC2700
PC2100
PC2100
PC2100
1. The values of
1. Data sheets for the base devices can be found on Micron’s Web site.
2. All part numbers end with a two-place code (not shown) that designates component and
128MB, 256MB, 512MB (x72, ECC, SR) 184-Pin DDR SDRAM RDIMM
actual DDR SDRAM device specifications are 15ns.
PCB revisions. Consult factory for current revision codes.
Example: MT9VDDT3272G-335G3.
Module
Density
Module
Density
128MB
128MB
128MB
128MB
128MB
256MB
256MB
256MB
256MB
256MB
256MB
1
1
CL = 2.5
128Mb DDR SDRAM
256Mb DDR SDRAM
128Mb (16 Meg x 8)
333
266
266
266
Data Rate (MT/s)
t
RCD and
4K (A0–A11)
4 (BA0, BA1)
1K (A0–A9)
Configuration
Configuration
128MB
16 Meg x 72
32 Meg x 72
16 Meg x 72
16 Meg x 72
16 Meg x 72
16 Meg x 72
32 Meg x 72
32 Meg x 72
32 Meg x 72
32 Meg x 72
32 Meg x 72
1 (S0#)
4K
t
RP for -335 modules show 18ns to align with industry specifications;
CL = 2
266
266
266
200
2
Bandwidth
Bandwidth
Module
Module
2.7 GB/s
2.7 GB/s
2.1 GB/s
2.1 GB/s
2.1 GB/s
2.7 GB/s
2.1 GB/s
2.1 GB/s
2.1 GB/s
2.1 GB/s
2.1 GB/s
Micron Technology, Inc., reserves the right to change products or specifications without notice.
256Mb (32 Meg x 8)
t
(ns)
RCD
18
15
20
20
8K (A0–A12)
4 (BA0, BA1)
1K (A0–A9)
256MB
1 (S0#)
8K
Memory Clock/
Memory Clock/
6.0ns/333 MT/s
6.0ns/333 MT/s
7.5ns/266 MT/s
7.5ns/266 MT/s
7.5ns/266 MT/s
6.0ns/333 MT/s
7.5ns/266 MT/s
7.5ns/266 MT/s
7.5ns/266 MT/s
7.5ns/266 MT/s
7.5ns/266 MT/s
Data Rate
Data Rate
(ns)
t
18
15
20
20
RP
©2003 Micron Technology, Inc. All rights reserved
512Mb (64 Meg x 8)
2K (A0–A9, A11)
(ns)
4 (BA0, BA1)
t
8K (A0–A12)
60
60
65
65
RC
512MB
1 (S0#)
(CL-
(CL-
Clock Cycles
Clock Cycles
8K
2.5-3-3
2.5-3-3
2.5-3-3
2.5-3-3
2.5-3-3
t
t
3-3-3
3-3-3
2-3-3
2-2-2
2-3-3
2-3-3
RCD-
RCD-
Features
Notes
t
t
RP)
RP)
1