MT9VDDT6472HY-335D2 Micron Technology Inc, MT9VDDT6472HY-335D2 Datasheet - Page 2

• Manufacturer Part Number: MT9VDDT6472HY-335D2
• Description: MODULE SDRAM DDR 512MB 184DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT9VDDT6472HY-335D2

• Memory Type: DDR SDRAM
• Memory Size: 512MB
• Speed: 333MT/s
• Package / Case: 184-DIMM
• Main Category: DRAM Module
• Sub-category: DDR SDRAM
• Module Type: 200SODIMM
• Device Core Size: 72b
• Organization: 64Mx72
• Total Density: 512MByte
• Chip Density: 512Mb
• Maximum Clock Rate: 333MHz
• Operating Supply Voltage (typ): 2.5V
• Operating Current: 1.575A
• Number Of Elements: 9
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 200
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 1:
Table 2:
Table 3:
Table 4:
PDF: 09005aef80804052/Source: 09005aef806e057b
DD9C16_32_64x72H.fm - Rev. E 1/08 EN
Parameter
Part Number
Part Number
Refresh count
Row address
Device bank address
Device configuration
Column address
Module rank address
MT9VDDT1672HG-335__
MT9VDDT1672HY-335__
MT9VDDT1672HY-262__
MT9VDDT1672HG-26A__
MT9VDDT1672HG-265__
MT9VDDT3272HG-40B__
MT9VDDT3272HY-40B__
MT9VDDT3272HG-335__
MT9VDDT3272HY-335__
MT9VDDT3272HG-262__
MT9VDDT3272HG-265__
MT9VDDT3272HY-265__
Speed
Grade
-26A
-40B
-335
-262
-265
Key Timing Parameters
Addressing
Part Numbers and Timing Parameters – 128MB Modules
Base device: MT46V16M8,
Part Numbers and Timing Parameters – 256MB Modules
Base device: MT46V32M8,
2
2
Nomenclature
Notes:
Industry
PC3200
PC2700
PC2100
PC2100
PC2100
1. The values of
128MB, 256MB, 512MB (x72, ECC, SR) 200-Pin DDR SDRAM SODIMM
actual DDR SDRAM device specifications are 15ns.
Module
Density
Module
Density
128MB
128MB
128MB
128MB
128MB
256MB
256MB
256MB
256MB
256MB
256MB
256MB
CL = 3
400
1
1
–
–
–
–
128Mb (16 Meg x 8)
128Mb DDR SDRAM
256Mb DDR SDRAM
8K (A0–A11)
4 (BA0, BA1)
Data Rate (MT/s)
t
1K (A0–A9)
RCD and
Configuration
Configuration
128MB
1 (S0#)
16 Meg x 72
16 Meg x 72
16 Meg x 72
16 Meg x 72
16 Meg x 72
32 Meg x 72
32 Meg x 72
32 Meg x 72
32 Meg x 72
32 Meg x 72
32 Meg x 72
32 Meg x 72
4K
CL = 2.5
333
333
266
266
266
t
RP for -335 modules show 18ns to align with industry specifications;
2
CL = 2
266
266
266
266
200
Bandwidth
Bandwidth
Module
Module
256Mb (32 Meg x 8)
2.7 GB/s
2.7 GB/s
2.1 GB/s
2.1 GB/s
2.1 GB/s
3.2 GB/s
3.2 GB/s
2.7 GB/s
2.7 GB/s
2.1 GB/s
2.1 GB/s
2.1 GB/s
Micron Technology, Inc., reserves the right to change products or specifications without notice.
8K (A0–A12)
4 (BA0, BA1)
1K (A0–A9)
256MB
1 (S0#)
t
(ns)
8K
RCD
15
18
15
20
20
Memory Clock/
Memory Clock/
6.0ns/333 MT/s
6.0ns/333 MT/s
7.5ns/266 MT/s
7.5ns/266 MT/s
7.5ns/266 MT/s
5.0ns/400 MT/s
5.0ns/400 MT/s
6.0ns/333 MT/s
6.0ns/333 MT/s
7.5ns/266 MT/s
7.5ns/266 MT/s
7.5ns/266 MT/s
Data Rate
Data Rate
(ns)
t
15
18
15
20
20
RP
©2004 Micron Technology, Inc. All rights reserved
512Mb (64 Meg x 8)
2K (A0–A9, A11)
4 (BA0, BA1)
8K (A0–A12)
(ns)
t
512MB
1 (S0#)
55
60
60
65
65
RC
(CL-
(CL-
Clock Cycles
Clock Cycles
8K
2.5-3-3
2.5-3-3
2.5-3-3
2.5-3-3
2.5-3-3
2.5-3-3
2.5-3-3
t
t
2-2-2
2-3-3
3-3-3
3-3-3
2-2-2
RCD-
RCD-
Features
Notes
t
t
RP)
RP)
1