MT9VDDT3272PHG-265G2 Micron Technology Inc, MT9VDDT3272PHG-265G2 Datasheet - Page 12
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MT9VDDT3272PHG-265G2
Manufacturer Part Number
MT9VDDT3272PHG-265G2
Description
MODULE SDRAM DDR 256MB 200SODIMM
Manufacturer
Micron Technology Inc
Datasheet
1.MT9VDDT1672PHG-335D2.pdf
(33 pages)
Specifications of MT9VDDT3272PHG-265G2
Memory Type
DDR SDRAM
Memory Size
256MB
Speed
266MT/s
Package / Case
200-SODIMM
Main Category
DRAM Module
Sub-category
DDR SDRAM
Module Type
200SODIMM
Device Core Size
72b
Organization
32Mx72
Total Density
256MByte
Chip Density
256Mb
Access Time (max)
750ps
Maximum Clock Rate
266MHz
Operating Supply Voltage (typ)
2.5V
Operating Current
1.35A
Number Of Elements
9
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
200
Mounting
Socket
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Absolute Maximum Ratings
nent damage to the device. This is a stress rating only,
and functional operation of the device at these or any
other conditions above those indicated in the opera-
Table 10: DC Electrical Characteristics and Operating Conditions
Notes: 1–5, 14; notes appear on pages 19–22; 0°C
Table 11: AC Input Operating Conditions
Notes: 1–5, 12, 48; notes appear on pages 19–22; 0°C
pdf: 09005aef808ffe58, source: 09005aef808ffdc7
DD9C16_32_64_128x72PHG.fm - Rev. B 9/04 EN
PARAMETER/CONDITION
Supply Voltage
I/O Supply Voltage
I/O Reference Voltage
I/O Termination Voltage (system)
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
INPUT LEAKAGE CURRENT
Any input 0V V
1.35V
(All other pins not under test = 0V)
OUTPUT LEAKAGE CURRENT
(DQs are disabled; 0V
OUTPUT LEVELS:
High Current (V
Low Current (V
PARAMETER/CONDITION
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
I/O Reference Voltage
Stresses greater than those listed may cause perma-
V
V
V
I/O Pins Voltage
REF
DD
DD
Relative to Vss . . . . . . . . . . . . . . . . . . . . -1V to +3.6V
Relative to V
Q Supply Voltage Relative to V
Supply Voltage Relative to V
and Inputs Voltage
OUT
OUT
IN
SS
= 0.373V, maximum V
= V
V
. . . . . . . . . . . . . -0.5V to VddQ +0.5V
DD
DDQ
V
, V
OUT
REF
-0.373V, minimum V
pin 0V V
V
DDQ
)
SS
SS
128MB, 256MB, 512MB, 1GB (x72, ECC, PLL, SR)
IN
. . . . -1V to +3.6V
REF
. . . -1V to +3.6V
, maximum V
Command/Address,
RAS#, CAS#, WE#,
CKE, S#
CK, CK#
DM
DQ, DQS
REF
, minimum V
T
A
T
+70°C
A
SYMBOL
V
TT
V
V
REF
IH
IL
)
+70°C; V
(A
(
12
AC
(
AC
C
TT
)
)
)
tional sections of this specification is not implied.
Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
)
SYMBOL
Operating Temperature,
Storage Temperature (plastic) . . . . . . -55°C to +150°C
Short Circuit Output Current. . . . . . . . . . . . . . . . 50mA
V
V
DD
V
V
0.49 x V
200-PIN DDR SDRAM SODIMM
V
IH
V
IL
V
I
I
I
DDQ
REF
T
T
OH
OZ
REF
OL
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
(D
(
I
I
I
TT
= V
I
I
I
DC
A
A
MIN
C
(ambient - commercial) . . . . . . . . . 0°C to +70°C
(ambient - industrial) . . . . . . . . . -40°C to +85°C
+ 0.310
)
)
–
DD
DDQ
Q = +2.5V ±0.2V
0.49 x V
V
V
REF
REF
-16.8
MIN
16.8
-0.3
2.3
2.3
-18
-5
-2
-5
+ 0.15
- 0.04
V
0.51 x
DDQ
REF
MAX
- 0.310
–
V
0.51 x V
V
DDQ
V
V
REF
REF
DD
MAX
©2004 Micron Technology, Inc. All rights reserved.
2.7
2.7
18
+ 0.04
5
2
5
–
–
- 0.15
+ 0.3
DDQ
UNITS
V
V
V
UNITS
mA
mA
µA
µA
µA
µA
V
V
V
V
V
V
ADVANCE
NOTES
25, 35
25, 35
32, 36, 39
NOTES
32, 36
33, 34
6
6, 39
7, 39
25
25
46
46