MT9HTF6472Y-40EB2 Micron Technology Inc, MT9HTF6472Y-40EB2 Datasheet - Page 2

• Manufacturer Part Number: MT9HTF6472Y-40EB2
• Description: MODULE SDRAM DDR2 512MB 240DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT9HTF6472Y-40EB2

• Memory Type: DDR2 SDRAM
• Memory Size: 512MB
• Speed: 400MT/s
• Package / Case: 240-DIMM
• Main Category: DRAM Module
• Sub-category: DDR2 SDRAM
• Module Type: 240RDIMM
• Device Core Size: 72b
• Organization: 64Mx72
• Total Density: 512MByte
• Chip Density: 512Mb
• Access Time (max): 600ps
• Maximum Clock Rate: 400MHz
• Operating Supply Voltage (typ): 1.8V
• Operating Current: 1.035A
• Number Of Elements: 9
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Operating Temp Range: 0C to 55C
• Operating Temperature Classification: Commercial
• Pin Count: 244
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 2:
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Table 5:
PDF: 09005aef817ab1fc/Source: 09005aef817ab1dd
HTF9C32_64_128x72K.fm - Rev. C 9/06 EN
Part Number
MT9HTF3272(P)KY-667__
MT9HTF3272(P)KY-53E__
MT9HTF3272(P)KY-40E__
Part Number
MT9HTF6472(P)KY-80E__
MT9HTF6472(P)KY-800
MT9HTF6472(P)KY-667__
MT9HTF6472(P)KY-53E__
MT9HTF6472(P)KY-40E__
Part Number
MT9HTF12872(P)KY-80E__
MT9HTF12872(P)KY-800__
MT9HTF12872(P)KY-667__
MT9HTF12872(P)KY-53E__
MT9HTF12872(P)KY-40E__
Speed
Grade
-80E
-800
-667
-53E
-40E
Key Timing Parameters
Part Numbers and Timing Parameters – 256MB
Base device: MT47H32M8, 256Mb DDR2 SDRAM
Part Numbers and Timing Parameters – 512MB
Base device: MT47H64M8, 512Mb DDR2 SDRAM
Part Numbers and Timing Parameters – 1GB
Base device: MT47H128M8, 1Gb DDR2 SDRAM
1
1
1
Nomenclature
Notes:
Industry
PC2-6400
PC2-6400
PC2-5300
PC2-4200
PC2-3200
1. All part numbers end with a two-place code (not shown), designating component and PCB
2. For component data sheets, refer to Micron’s web site at www.micron.com/products/dram/
256MB, 512MB, 1GB: (x72, SR) 244-Pin DDR2 Registered MiniDIMM
Module
Density
Module
Density
Module
Density
revisions. Consult factory for current revision codes. Example: MT9HTF6472KY-40EC2.
ddr2.
256MB
256MB
256MB
512MB
512MB
512MB
512MB
512MB
1GB
1GB
1GB
1GB
1GB
CL = 6
800
–
–
–
–
Configuration
Configuration
Configuration
128 Meg x 72
128 Meg x 72
128 Meg x 72
128 Meg x 72
128 Meg x 72
32 Meg x 72
32 Meg x 72
32 Meg x 72
64 Meg x 72
64 Meg x 72
64 Meg x 72
64 Meg x 72
64 Meg x 72
Data Rate (MT/s)
CL = 5
800
667
667
–
–
2
CL = 4
533
400
533
533
–
Bandwidth
Bandwidth
Bandwidth
Module
Module
Module
5.3 GB/s
4.3 GB/s
3.2 GB/s
6.4 GB/s
6.4 GB/s
5.3 GB/s
4.3 GB/s
3.2 GB/s
6.4 GB/s
6.4 GB/s
5.3 GB/s
4.3 GB/s
3.2 GB/s
Micron Technology, Inc., reserves the right to change products or specifications without notice.
CL = 3
400
400
400
–
–
Memory Clock/
Memory Clock/
Memory Clock/
3.75ns/533 MT/s
3.75ns/533 MT/s
3.75ns/533 MT/s
3.0ns/667 MT/s
5.0ns/400 MT/s
2.5ns/800 MT/s
2.5ns/800 MT/s
3.0ns/667 MT/s
5.0ns/400 MT/s
2.5ns/800 MT/s
2.5ns/800 MT/s
3.0ns/667 MT/s
5.0ns/400 MT/s
Data Rate
Data Rate
Data Rate
t
(ns)
12.5
RCD
15
15
15
15
©2005 Micron Technology, Inc. All rights reserved.
(ns)
12.5
t
15
15
15
15
RP
(CL -
(CL -
(CL -
Latency
Latency
Latency
t
t
t
5-5-5
4-4-4
3-3-3
5-5-5
6-6-6
5-5-5
4-4-4
3-3-3
5-5-5
6-6-6
5-5-5
4-4-4
3-3-3
Features
RCD -
RCD -
RCD -
(ns)
t
55
55
55
55
55
RC
t
t
t
RP)
RP)
RP)