MT9HTF6472Y-40EB2 Micron Technology Inc, MT9HTF6472Y-40EB2 Datasheet - Page 17
![MODULE SDRAM DDR2 512MB 240DIMM](/photos/7/83/78383/mfg557-240-dimm_sml.jpg)
MT9HTF6472Y-40EB2
Manufacturer Part Number
MT9HTF6472Y-40EB2
Description
MODULE SDRAM DDR2 512MB 240DIMM
Manufacturer
Micron Technology Inc
Datasheet
1.MT9HTF6472Y-40EB2.pdf
(18 pages)
Specifications of MT9HTF6472Y-40EB2
Memory Type
DDR2 SDRAM
Memory Size
512MB
Speed
400MT/s
Package / Case
240-DIMM
Main Category
DRAM Module
Sub-category
DDR2 SDRAM
Module Type
240RDIMM
Device Core Size
72b
Organization
64Mx72
Total Density
512MByte
Chip Density
512Mb
Access Time (max)
600ps
Maximum Clock Rate
400MHz
Operating Supply Voltage (typ)
1.8V
Operating Current
1.035A
Number Of Elements
9
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Operating Temp Range
0C to 55C
Operating Temperature Classification
Commercial
Pin Count
244
Mounting
Socket
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Table 18:
PDF: 09005aef817ab1fc/Source: 09005aef817ab1dd
HTF9C32_64_128x72K.fm - Rev. C 9/06 EN
99–127 Manufacturer-specific data
47–61 Optional features, not supported
65–71 Manufacturer’s JEDEC ID code
73–90 Module part number (ASCII)
95–98 Module serial number
Byte
128–
255
41
42
43
44
45
46
62
63
64
72
91
92
93
94
MIN active auto refresh time,
(see note 1)
Minimum AUTO REFRESH to
ACTIVE/AUTO REFRESH command
period,
SDRAM device MAX cycle time,
t
SDRAM device MAX DQS–DQ
skew time,
SDRAM device MAX read data
hold skew factor,
PLL relock time
SPD revision
Checksum for bytes 0–62
ECC/ECC and parity
Manufacturer’s JEDEC ID code
Manufacturing location
PCB identification code
Identification code (continued)
Year of manufacture in BCD
Week of manufacture in BCD
(RSVD)
Customer reserved
CK (MAX)
Serial Presence-Detect Matrix
“1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW”; table notes located on page 17
t
RFC
Description
Notes:
t
DQSQ
t
QHS
1. The
256MB, 512MB, 1GB: (x72, SR) 244-Pin DDR2 Registered MiniDIMM
DDR2 device specification is
t
RC SPD values shown are JEDEC DDR2 device specification values. The actual Micron
t
RC
-800/-667/-53E
(Continued)
Release 1.2
(Version)
-80E/-800
-80E/-800
MICRON
Entry
01–12
-80E
-40E
-667
-53E
-40E
-667
-53E
-40E
-80E
-800
-667
-53E
-40E
1–9
0
t
17
RC = 55nsfor all speed grades.
MT9HTF3272(P)K
MT9HTF3272K/
Variable data
Variable data
Variable data
Variable data
CA/CE
01–0C
01–09
1F/23
31/35
2D
3C
4B
2C
39
37
80
18
1E
23
22
28
0F
00
12
FF
00
00
FF
–
–
–
–
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Register and PLL Specifications
MT9HTF6472(P)K
MT9HTF6472K/
Variable data
Variable data
Variable data
Variable data
01–0C
01–09
29/2D
7E/82
90/94
DA
2D
39
3C
37
69
80
14
18
1E
23
1E
22
28
0F
00
12
C6
2C
00
00
FF
FF
©2005 Micron Technology, Inc. All rights reserved.
MT9HTF12872K(P)K
MT9HTF12872K/
Variable data
Variable data
Variable data
Variable data
CA/CE
01–0C
01–09
31/35
1F/23
2D
3C
3C
37
7F
80
14
18
1E
23
1E
22
28
0F
00
12
7B
7B
2C
00
00
FF
FF