MT4LSDT464HG-13EG4 Micron Technology Inc, MT4LSDT464HG-13EG4 Datasheet - Page 18

• Manufacturer Part Number: MT4LSDT464HG-13EG4
• Description: MODULE SDRAM 32MB 144SODIMM
• Manufacturer: Micron Technology Inc

Specifications of MT4LSDT464HG-13EG4

• Memory Type: SDRAM
• Memory Size: 32MB
• Speed: 133MHz
• Package / Case: 144-SODIMM
• Main Category: DRAM Module
• Sub-category: SDRAM
• Module Type: 144SODIMM
• Device Core Size: 64b
• Organization: 4Mx64
• Total Density: 32MByte
• Chip Density: 64Mb
• Access Time (max): 5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 3.3V
• Operating Current: 600mA
• Number Of Elements: 4
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Operating Temp Range: 0C to 65C
• Operating Temperature Classification: Commercial
• Pin Count: 144
• Mounting: Socket
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Table 16: EEPROM Device Select Code
Most significant bit (b7) is sent first
Table 17: EEPROM Operating Modes
09005aef80748a77
SD4C4_8_16X64HG.fm - Rev. C 6/04 EN
Memory Area Select Code (two arrays)
Protection Register Select Code
MODE
Current Address Read
Random Address Read
Sequential Read
Byte Write
Page Write
SDA OUT
SDA IN
SCL
t SU:STA
Figure 9: SPD EEPROM Timing Diagram
RW BIT
t F
1
0
1
1
0
0
t HD:STA
t LOW
t AA
V
V
V
V
b6
IH
IH
IH
IH
1
0
WC
V
V
DEVICE TYPE IDENTIFIER
or V
or V
or V
or V
IL
IL
t HIGH
t HD:DAT
IL
IL
IL
IL
b5
0
1
18
BYTES
1
1
1
1
16
1
t DH
b5
32MB, 64MB, 128MB (x64, SR)
1
1
t R
Micron Technology, Inc., reserves the right to change products or specifications without notice.
INITIAL SEQUENCE
START, Device Select, RW = 1
START, Device Select, RW = 0, Address
reSTART, Device Select, RW= 1
Similar to Current or Random Address Read
START, Device Select, RW = 0
START, Device Select, RW = 0
t SU:DAT
144-PIN SDRAM SODIMM
b4
0
0
SA2
SA2
b3
CHIP ENABLE
©2004 Micron Technology, Inc. All rights reserved.
SA1
SA1
b2
t SU:STO
t BUF
SA0
SA0
b1
UNDEFINED
RW
RW
RW
b0