MT4LSDT464HG-13EG4 Micron Technology Inc, MT4LSDT464HG-13EG4 Datasheet - Page 20
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MT4LSDT464HG-13EG4
Manufacturer Part Number
MT4LSDT464HG-13EG4
Description
MODULE SDRAM 32MB 144SODIMM
Manufacturer
Micron Technology Inc
Datasheet
1.MT4LSDT464HG-13EG4.pdf
(22 pages)
Specifications of MT4LSDT464HG-13EG4
Memory Type
SDRAM
Memory Size
32MB
Speed
133MHz
Package / Case
144-SODIMM
Main Category
DRAM Module
Sub-category
SDRAM
Module Type
144SODIMM
Device Core Size
64b
Organization
4Mx64
Total Density
32MByte
Chip Density
64Mb
Access Time (max)
5.4ns
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
3.3V
Operating Current
600mA
Number Of Elements
4
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Operating Temp Range
0C to 65C
Operating Temperature Classification
Commercial
Pin Count
144
Mounting
Socket
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Table 20: Serial Presence-Detect Matrix
“1”/”0”: Serial Data, “driven to HIGH”/”driven to LOW”; notes appear at end of Serial Presence-Detect Matrix
09005aef80748a77
SD4C4_8_16X64HG.fm - Rev. C 6/04 EN
BYTE DESCRIPTION
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
0
1
2
3
4
5
6
7
8
9
Number of Bytes Used by Micron
Total Number of SPD Memory Bytes
Memory Type
Number of Row Addresses
Number of Column Addresses
Number of Module Ranks
Module Data Width
Module Data Width (Continued)
Module Voltage Interface Levels
SDRAM Cycle Time,
SDRAM Access from CLK,
Module Configuration Type
Refresh Rate/Type
SDRAM Width (Primary SDRAM)
Error-checking SDRAM Data Width
Minimum Clock Delay from Back-to-Back
Random Column Addresses,
Burst Lengths Supported
Number of Banks on SDRAM Device
CAS Latencies Supported
CS Latency
WE Latency
SDRAM Module Attributes
SDRAM Device Attributes: General
SDRAM Cycle Time,
(CAS Latency = 2) 10 (-133/-10E) A0
SDRAM Access from CLK,
(CAS Latency = 2)
SDRAM Cycle Time,
(CAS Latency = 1)
SDRAM Access from CLK,
(CAS Latency = 1)
Minimum Row Precharge Time,
Minimum Row Active to Row Active,
Minimum RAS# to CAS# Delay,
t
t
t
CK (CAS Latency = 3)
CK
CK
t
t
t
AC (CAS Latency = 3) 5.4ns (-13E/-133)
AC
AC
t
CCD
t
RCD
t
RP
t
RRD
20ns (-133/-10E)
1, 2, 4, 8, PAGE
15ns (-13E)20ns
6ns (-133/-10E)
10ns (-133/-10E)
UNBUFFERED
(VERSION)
7.5ns (-133)
7.81µs/SELF
7.5ns (13E)
54ns (-13E)
15ns (-13E)
14ns (-13E)
15ns (-133)
20ns (-10E)
7ns (-13E)
8ns (-10E)
6ns (-10E)
(-133/-10E)
15.6µs or
12 or 13
SDRAM
ENTRY
8 or 9
LVTTL
NONE
20
128
256
2, 3
64
16
0E
1
0
1
4
0
0
32MB, 64MB, 128MB (x64, SR)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT4LSDT464H
144-PIN SDRAM SODIMM
A0
80
08
04
0C
08
01
40
00
01
70
75
80
54
60
00
80
10
00
01
04
06
01
01
00
0E
75
54
60
00
00
14
0E
14
14
8F
0F
0F
0F
MT4LSDT864H
©2004 Micron Technology, Inc. All rights reserved.
A0
80
08
04
0C
09
01
40
00
01
70
75
80
54
60
00
80
10
00
01
04
01
01
00
0E
75
54
60
00
00
14
0E
14
14
8F
0F
0F
0F
6
MT4LSDT1664H
0D
A0
80
08
04
09
01
40
00
01
70
75
80
54
60
00
82
10
00
01
04
06
01
01
00
0E
75
54
60
00
00
14
0E
14
14
8F
0F
0F
0F