MT36VDDT51272G-265A2 Micron Technology Inc, MT36VDDT51272G-265A2 Datasheet

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MT36VDDT51272G-265A2

Manufacturer Part Number
MT36VDDT51272G-265A2
Description
MODULE SDRAM DDR 4GB 184DIMM
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT36VDDT51272G-265A2

Memory Type
DDR SDRAM
Memory Size
4GB
Speed
266MT/s
Package / Case
184-DIMM
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DDR SDRAM RDIMM
MT36VDDT12872 – 1GB
MT36VDDT25672 – 2GB
MT36VDDT51272 – 4GB
For component data sheets, refer to Micron’s Web site:
Features
• 184-pin, registered dual in-line memory module
• Standard and low profile height PCB modules
• Fast data transfer rates: PC2100 or PC2700
• 1GB (128 Meg x 72), 2GB (256 Meg x 72),
• Supports ECC error detection and correction
• V
• V
• 2.5V I/O (SSTL_2-compatible)
• Internal, pipelined double data rate (DDR)
• Bidirectional data strobe (DQS) transmitted/
• Differential clock inputs (CK and CK#)
• Multiple internal device banks for concurrent
• Dual rank
• Selectable burst lengths (BL): 2, 4, or 8
• Auto precharge option
• Auto refresh and self refresh modes: 7.8125µs
• Serial presence-detect (SPD) with EEPROM
• Selectable CAS latency (CL) for maximum
• Gold edge contacts
184-Pin RDIMM Figures
Figure 1:
PDF: 09005aef809d5451/Source: 09005aef807da325
dd36c128_256_512x72.fm - Rev. F 6/08 EN
PCB height: 43.18mm (1.7in)
(RDIMM)
and 4GB (512 Meg x 72)
2n-prefetch architecture
received with data—that is, source-synchronous
data capture
operation
maximum average periodic refresh interval
compatibility
DD
DDSPD
= V
DD
= +2.3V to +3.6V
Q = +2.5V
Standard-Height Layout (MO-206)
Products and specifications discussed herein are subject to change by Micron without notice.
1
1
1GB, 2GB, 4GB (x72, ECC, DR) 184-Pin DDR RDIMM
www.micron.com
1
Figure 2:
Notes: 1. End of life.
Options
• Operating temperature
• Package
• Memory clock, speed, CAS latency
PCB height: 30.48mm (1.2in)
– Commercial (0°C ≤ T
– Industrial (–40°C ≤ T
– 184-pin DIMM (standard)
– 184-pin DIMM (Pb-free)
– 6.0ns (167 MHz), 333 MT/s, CL = 2.5
– 7.5ns (133 MHz), 266 MT/s, CL = 2
– 7.5ns (133 MHz), 266 MT/s, CL = 2
– 7.5ns (133 MHz), 266 MT/s, CL = 2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2. Contact Micron for industrial temperature
3. CL = CAS (READ) latency; registered mode
4. Not recommended for new designs.
module offerings.
will add one clock cycle to CL.
Low-Profile Layout (MO-206)
A
A
2
≤ +85°C)
≤ +70°C)
©2003 Micron Technology, Inc. All rights reserved.
3
4
4
Marking
Features
None
-26A
-335
-262
-265
G
Y
I

Related parts for MT36VDDT51272G-265A2

MT36VDDT51272G-265A2 Summary of contents

Page 1

... For component data sheets, refer to Micron’s Web site: Features • 184-pin, registered dual in-line memory module (RDIMM) • Standard and low profile height PCB modules • Fast data transfer rates: PC2100 or PC2700 • 1GB (128 Meg x 72), 2GB (256 Meg x 72), and 4GB (512 Meg x 72) • ...

Page 2

... RCD and RP for -335 modules show 18ns to align with industry specifications; 1GB 4K 8K (A0–A12) 4 (BA0, BA1) 256Mb (64 Meg x 4) 512Mb (128 Meg (A0–A9, A11) 4K (A0–A09, A11, A12) 2 (S0#, S1#) 1 256Mb DDR SDRAM ...

Page 3

... Part Number Density MT36VDDT51272G-335__ MT36VDDT51272Y-335__ MT36VDDT51272G-26A__ MT36VDDT51272G-265__ MT36VDDT51272Y-265__ Notes: 1. The data sheets for the base devices can be found on Micron’s Web site. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. ...

Page 4

Pin Assignments and Descriptions Table 6: Pin Assignments 184-Pin DDR RDIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol DQ17 47 REF 2 DQ0 25 DQS2 DQ1 ...

Page 5

Table 7: Pin Descriptions Symbol A0–A13 BA0, BA1 CK0, CK0# CKE0, CKE1 RAS#, CAS#, WE# RESET# S0#, S1# SA0–SA2 SCL CB0–CB7 DQ0–DQ63 DQS0–DQS17 SDA DDSPD V REF PDF: 09005aef809d5451/Source: 09005aef807da325 ...

Page 6

Functional Block Diagrams Figure 3: Functional Block Diagram, Standard Height, 43.18mm (1.7in RS1# RS0# DQS0 DQ0 DQ1 DQ2 DQ3 DQS1 DQ8 DQ9 DQ10 DQ11 DQS2 DQ16 DQ17 DQ18 DQ19 DQS3 DQ24 DQ25 DQ26 DQ27 DQS4 DQ32 DQ33 DQ34 ...

Page 7

Figure 4: Functional Block Diagram, Low Profile, 43.18mm (1.2in RS1# RS0# DQS0 DQ0 DQ1 DQ2 DQ3 DQS1 DQ8 DQ9 DQ10 DQ11 DQS2 DQ16 DQ17 DQ18 DQ19 DQS3 DQ24 DQ25 DQ26 DQ27 DQS4 DQ32 DQ33 DQ34 DQ35 DQS5 DQ40 ...

Page 8

... JEDEC clock reference board. Registered mode will add one clock cycle to CL. Serial Presence-Detect Operation DDR SDRAM modules incorporate serial presence-detect. The SPD data is stored in a 256-byte EEPROM. The first 128 bytes are programmed by Micron to identify the module type and various DDR SDRAM organizations and timing parameters. The remaining 128 bytes of storage are available for use by the customer ...

Page 9

Electrical Specifications Stresses greater than those listed in Table 8 may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other conditions outside those indicated in each ...

Page 10

... Design Considerations Simulations Micron memory modules are designed to optimize signal integrity through carefully designed terminations, controlled board impedances, routing topologies, trace length matching, and decoupling. However, good signal integrity starts at the system level. Micron encourages designers to simulate the signal characteristics of the system’s memory bus to ensure adequate signal integrity of the entire memory system ...

Page 11

I Specifications DD Table 10: I Specifications and Conditions – 1GB DD Values are for the MT46V64M4 DDR SDRAM only and are computed from values specified in the 256Mb (64 Meg x 4) component data sheet Parameter/Condition Operating one bank ...

Page 12

Table 11: I Specifications and Conditions – 2GB DD Values are for the MT46V128M4 DDR SDRAM only and are computed from values specified in the 512Mb (128 Meg x 4) component data sheet Parameter/Condition Operating one bank active-precharge current: (MIN); ...

Page 13

Table 12: I Specifications and Conditions – 4GB DD Values are for the MT46V256M4 DDR SDRAM only and are computed from values specified in the 1Gb (256 Meg x 4) component data sheet Parameter/Condition Operating one bank active-precharge current: (MIN); ...

Page 14

Register and PLL Specifications Table 13: Register Specifications SSTV16859 devices or equivalent JESD82-4B Parameter Symbol DC high-level Address, control input voltage DC low-level Address, control input voltage AC high-level V ...

Page 15

Table 14: PLL Specifications CVF857 device or equivalent JESD82-1A Parameter DC high-level input voltage DC low-level input voltage Input voltage (limits) Input differential-pair cross voltage Input differential voltage Input differential voltage Input current Dynamic supply current Dynamic supply current Dynamic ...

Page 16

Serial Presence-Detect Table 16: Serial Presence-Detect EEPROM DC Operating Conditions Parameter/Condition Supply voltage Input high voltage: Logic 1; All inputs Input low voltage: Logic 0; All inputs Output low voltage 3mA OUT Input leakage current GND ...

Page 17

Module Dimensions Figure 5: 184-Pin DDR RDIMM – Standard Height, 43.18mm (1.7in 2.0 (0.079) R (4X) 2.5 (0.098) D (2X) 2.3 (0.091) TYP Pin 1 1.27 (0.05) TYP 2.2 (0.087) 64.77 (2.55) TYP U14 U15 Pin 184 Notes: ...

Page 18

Figure 6: 184-Pin DDR RDIMM – Low Profile, 43.18mm (1.2in) 2.0 (0.079) R (4X 2.5 (0.098) D (2X) 2.3 (0.091) TYP Pin 1 1.27 (0.05) 2.2 (0.087) TYP U10 U11 Pin 184 Notes: 1. All dimensions are in ...

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