MT36LSDF12872G-13ED1 Micron Technology Inc, MT36LSDF12872G-13ED1 Datasheet - Page 9
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MT36LSDF12872G-13ED1
Manufacturer Part Number
MT36LSDF12872G-13ED1
Description
MODULE SDRAM 1GB 168DIMM
Manufacturer
Micron Technology Inc
Datasheet
1.MT36LSDF12872G-133D1.pdf
(30 pages)
Specifications of MT36LSDF12872G-13ED1
Memory Type
SDRAM
Memory Size
1GB
Speed
133MHz
Package / Case
168-DIMM
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Figure 4:
PDF: 09005aef80b1835d/Source: 09005aef80b18348
SD36C128_256x72G.fm - Rev. E 6/05 EN
Mode Register Definition Diagram
M12, M11, M10 = “0, 0,0”
to ensure compatibility
with future devices.
Program
12
A12
Reserved
11
A11
10
A10
WB
M9
0
1
9
A9
Op Mode
8
A8
1GB, 2GB: (x72, ECC, DR) 168-Pin SDRAM RDIMM
7
A7
Programmed Burst Length
M8
0
Single Location Access
-
CAS Latency
6
Write Burst Mode
9
A6
5
M7
A5
0
-
4
A4
Micron Technology, Inc., reserves the right to change products or specifications without notice.
M3
BT
M6-M0
Defined
0
1
3
A3
-
M2
M6
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
Burst Length
2
M1
A2
M5
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
M0
M4
1
Operating Mode
Standard Operation
All other states reserved
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
A1
0
A0
Reserved
Reserved
Reserved
Full Page
M3 = 0
Mode Register Definition
Burst Type
Interleaved
Sequential
1
2
4
8
Mode Register (Mx)
Address Bus
Burst Length
CAS Latency
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
2
3
©2002 Micron Technology, Inc. All rights reserved.
Reserved
Reserved
Reserved
Reserved
M3 = 1
1
2
4
8