MT18VDDT6472AG-335G4 Micron Technology Inc, MT18VDDT6472AG-335G4 Datasheet - Page 34
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MT18VDDT6472AG-335G4
Manufacturer Part Number
MT18VDDT6472AG-335G4
Description
MODULE SDRAM DDR 512MB 184DIMM
Manufacturer
Micron Technology Inc
Specifications of MT18VDDT6472AG-335G4
Memory Type
DDR SDRAM
Memory Size
512MB
Speed
333MT/s
Package / Case
184-DIMM
Main Category
DRAM Module
Sub-category
DDR SDRAM
Module Type
184UDIMM
Device Core Size
72b
Organization
64Mx72
Total Density
512MByte
Chip Density
256Mb
Maximum Clock Rate
333MHz
Operating Supply Voltage (typ)
2.5V
Operating Current
1.611A
Number Of Elements
18
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
184
Mounting
Socket
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Table 23: Serial Presence-Detect Matrix – 256MB, 512MB, and 1GB (Continued)
“1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW”; notes appear on page 35
pdf: 09005aef808a331f, source: 09005aef80858037
DD18C32_64_128_256x72G.fm - Rev. E 9/04 EN
BYTE
36-40 Reserved
46-61 Reserved
46-61 Reserved
65-71 Manufacturer’s JEDEC ID Code
73-90 Module Part Number (ASCII)
29
30
31
32
33
34
35
41
42
43
44
45
47
62
63
64
72
91
92
93
Minimum RAS# to CAS# Delay,
Minimum RAS# Pulse Width,
(Note 2)
Module Rank Density
Address and Command Setup Time,
t
Address and Command Hold Time,
t
Data/Data Mask Input Setup Time,
t
Data/Data Mask Input Hold Time,
t
Min Active Auto Refresh Time,
Minimum Auto Refresh to Active/
Auto Refresh Command Period,
t
SDRAM Device Max Cycle Time,
t
SDRAM Device Max DQS-DQ Skew
Time,
SDRAM Device Max Read Data Hold
Skew Factor,
DIMM Height
SPD Revision
Checksum for Bytes 0-62
(Standard/Low-profile)
Manufacturer’s JEDEC ID Code
Manufacturing Location
PCB Identification Code
Identification Code (Continued)
Year of Manufacture in BCD
IS (See note 3)
IH (See note 3)
DS
DH
RFC
CK
MAX
t
DQSQ
DESCRIPTION
t
QHS
t
RAS
t
t
RCD
RC
13ns (-262/-26A/-265/-202)
0.50ns (-262/-26A/-265)
0.50ns (-262/-26A/-265)
0.5ns (-262/-26A/-265)
0.75ns (-262/-26A/-265)
20ns (-26A/-265/-202)
45ns (-262/-26A/-265)
75ns (-262/-26A/-265)
1ns (-262/-26A/-265)
ENTRY (VERSION)
1ns (262/-26A/-265)
65ns (-26A/-265)
128MB, 256MB,
1.1ns (-202)
1.1ns (-202)
0.6ns (-202)
0.6ns (-202)
0.6ns (-202)
1.0ns (-202)
(Continued)
15ns (-262)
40ns (-202)
60ns (-262)
70ns (-202)
80ns (-202)
Release 1.0
MICRON
512MB
01–12
256MB, 512MB, 1GB, 2GB (x72, ECC, SR)
-26A
-262
-265
-202
1–9
0
34
MT18VDDT3272 MT18VDDT6472 MT18VDDT12872
Variable Data
Variable Data
Micron Technology, Inc., reserves the right to change products or specifications without notice.
184-PIN DDR SDRAM RDIMM
D7/C8
01–0C
01–09
CF/C0
10/01
34/25
04/F5
2D
A0
A0
A0
3C
B0
B0
3C
4B
3C
2C
50
28
40
50
60
50
60
00
41
46
50
34
32
75
00
00
10
00
FF
Variable Data
Variable Data
01–0C
1A/0B
01–09
10/01
47/38
77/68
12/03
2D
A0
A0
A0
3C
50
28
80
B0
B0
50
60
50
60
00
3C
41
46
4B
50
34
32
3C
75
00
00
10
2C
00
FF
©2004 Micron Technology, Inc. All rights reserved.
Variable Data
Variable Data
C9/BA
01–0C
9C/8D
F9/EA
01–09
10/01
94/85
2D
A0
A0
A0
3C
50
28
01
B0
B0
50
60
50
60
00
3C
41
46
4B
50
34
32
3C
75
00
00
10
2C
00
FF