MT18VDDF6472G-40BG3 Micron Technology Inc, MT18VDDF6472G-40BG3 Datasheet - Page 10
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MT18VDDF6472G-40BG3
Manufacturer Part Number
MT18VDDF6472G-40BG3
Description
MODULE SDRAM DDR 512MB 184DIMM
Manufacturer
Micron Technology Inc
Datasheet
1.MT18VDDF12872Y-40BF1.pdf
(31 pages)
Specifications of MT18VDDF6472G-40BG3
Memory Type
DDR SDRAM
Memory Size
512MB
Speed
400MT/s
Package / Case
184-DIMM
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Table 6:
NOTE:
Table 7:
pdf: 09005aef80f6b913, source: 09005aef80f6b41c
DDAF18C64_128x72G.fm - Rev. C 9/04 EN
LENGTH
1. For a burst length of two, A1
2. For a burst length of four, A2
3. For a burst length of eight, A3
4. Whenever a boundary of the block is reached within a
5. i = 9, 11 (512MB)
BURST
SPEED
element block; A0 selects the first access within the
block.
element block; A0
block.
element block; A0
block.
given sequence above, the following access wraps
within the block.
i = 9, 11, 12 (1GB)
2
4
8
-40B
A2 A1 A0
0
0
0
0
1
1
1
1
STARTING
ADDRESS
COLUMN
75
Burst Definition Table
CAS Latency (CL) Table
A1 A0
0
0
1
1
0
0
1
1
0
0
1
1
CL = 2
f
A0
–
–
CLOCK FREQUENCY (MHZ)
0
1
0
1
0
1
0
1
0
1
0
1
0
1
ALLOWABLE OPERATING
A1 select the first access within the
A2 select the first access within the
133
ORDER OF ACCESSES WITHIN
0-1-2-3-4-5-6-7 0-1-2-3-4-5-6-7
1-2-3-4-5-6-7-0 1-0-3-2-5-4-7-6
2-3-4-5-6-7-0-1 2-3-0-1-6-7-4-5
3-4-5-6-7-0-1-2 3-2-1-0-7-6-5-4
4-5-6-7-0-1-2-3 4-5-6-7-0-1-2-3
5-6-7-0-1-2-3-4 5-4-7-6-1-0-3-2
6-7-0-1-2-3-4-5 6-7-4-5-2-3-0-1
7-0-1-2-3-4-5-6 7-6-5-4-3-2-1-0
SEQUENTIAL
75
TYPE =
0-1-2-3
1-2-3-0
2-3-0-1
3-0-1-2
CL = 2.5
0-1
1-0
–
–
–
Ai select the two-data-
Ai select the four-data-
Ai select the eight-data-
f
A BURST
133
INTERLEAVED
133
TYPE =
0-1-2-3
1-0-3-2
2-3-0-1
3-2-1-0
CL = 3
0-1
1-0
f
200
10
512MB, 1GB (x72, ECC, SR) PC3200
Read Latency
between the registration of a READ command and the
availability of the first bit of output data. The latency
can be set to 3, 2.5, or 2 clocks, as shown in Figure 6,
CAS Latency Diagram.
and the latency is m clocks, the data will be available
nominally coincident with clock edge n + m. The CAS
Latency Table indicates the operating frequencies at
which each CAS latency setting can be used.
known operation or incompatibility with future ver-
sions may result.
Operating Mode
MODE REGISTER SET command with bits A7–A12
each set to zero, and bits A0–A6 set to the desired val-
ues. A DLL reset is initiated by issuing a MODE REGIS-
TER SET command with bits A7 and A9–A12 each set
COMMAND
COMMAND
COMMAND
The READ latency is the delay, in clock cycles,
If a READ command is registered at clock edge n,
Reserved states should not be used, because un-
The normal operating mode is selected by issuing a
DQS
DQS
DQS
CK#
CK#
CK#
DQ
DQ
DQ
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Figure 6: CAS Latency Diagram
CK
CK
CK
184-PIN DDR SDRAM RDIMM
READ
READ
READ
Burst Length = 4 in the cases shown
Shown with nominal t AC, t DQSCK, and t DQSQ
T0
T0
T0
TRANSITIONING DATA
CL = 2
CL = 2.5
NOP
NOP
NOP
T1
T1
T1
CL = 3
©2004 Micron Technology, Inc. All rights reserved.
T2
NOP
NOP
NOP
T2
T2
T2n
T2n
T2n
DON’T CARE
T3
NOP
NOP
NOP
T3
T3
T3n
T3n
T3n