MT18VDDF6472DG-40BG2 Micron Technology Inc, MT18VDDF6472DG-40BG2 Datasheet - Page 24

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MT18VDDF6472DG-40BG2

Manufacturer Part Number
MT18VDDF6472DG-40BG2
Description
MODULE SDRAM DDR 512MB 184DIMM
Manufacturer
Micron Technology Inc

Specifications of MT18VDDF6472DG-40BG2

Memory Type
DDR SDRAM
Memory Size
512MB
Speed
400MT/s
Package / Case
184-DIMM
Main Category
DRAM Module
Sub-category
DDR SDRAM
Module Type
184RDIMM
Device Core Size
72b
Organization
64Mx72
Total Density
512MByte
Chip Density
256Mb
Access Time (max)
500ps
Maximum Clock Rate
400MHz
Operating Supply Voltage (typ)
2.5V
Operating Current
1.836A
Number Of Elements
18
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
184
Mounting
Socket
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
pdf: 09005aef8074e85b, source: 09005aef8072fe49
DDF18C64_128x72G.fm - Rev. C 11/04 EN
45. I
46. Whenever the operating frequency is altered, not
driven to a valid high or low logic level. I
similar to I
address and control inputs to remain stable.
Although I
I
including jitter, the DLL is required to be reset.
This is followed by 200 clock cycles (before READ
commands).
DD
DD
2N specifies the DQ, DQS, and DM to be
2
F
is “worst case.”
DD
DD
2
F
2
, I
F
DD
except I
2
N
, and I
DD
DD
2Q specifies the
2Q are similar,
DD
2Q is
24
47. Leakage number reflects the worst case leakage
48. When an input signal is HIGH or LOW, it is
49. The -335 speed grade will operate with
possible through the module pin, not what each
memory device contributes.
defined as a steady state logic high or logic low.
= 40ns and
frequency.
Micron Technology, Inc., reserves the right to change products or specifications without notice.
184-PIN DDR SDRAM RDIMM
512MB, 1GB (x72, ECC, SR)
t
RAS (MAX) = 120,000ns at any slower
©2004 Micron Technology, Inc. All rights reserved.
t
RAS (MIN)

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