MT16HTF12864HY-40EB3 Micron Technology Inc, MT16HTF12864HY-40EB3 Datasheet - Page 2
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MT16HTF12864HY-40EB3
Manufacturer Part Number
MT16HTF12864HY-40EB3
Description
MODULE SDRAM DDR2 1GB 200SODIMM
Manufacturer
Micron Technology Inc
Specifications of MT16HTF12864HY-40EB3
Memory Type
DDR2 SDRAM
Memory Size
1GB
Speed
400MT/s
Package / Case
200-SODIMM
Main Category
DRAM Module
Sub-category
DDR2 SDRAM
Module Type
200SODIMM
Device Core Size
64b
Organization
128Mx64
Total Density
1GByte
Chip Density
512Mb
Access Time (max)
60ps
Maximum Clock Rate
400MHz
Operating Supply Voltage (typ)
1.8V
Operating Current
976mA
Number Of Elements
16
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
200
Mounting
Socket
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Table 2: Addressing
Table 3: Part Numbers and Timing Parameters – 1GB Modules
Base device: MT47H64M8,
Table 4: Part Numbers and Timing Parameters – 2GB Modules
Base device: MT47H128M8,
PDF: 09005aef818e4054
htf16c128_256x64h.pdf - Rev. D 3/10 EN
Parameter
Refresh count
Row address
Device bank address
Device configuration
Column address
Module rank address
Notes:
MT16HTF12864H(I)Y-80E__
MT16HTF12864H(I)Y-800__
MT16HTF12864H(I)Y-667__
MT16HTF12864H(I)Y-53E__
MT16HTF12864H(I)Y-40E__
MT16HTF25664H(I)Y-80E__
MT16HTF25664H(I)Y-800__
MT16HTF25664H(I)Y-667__
MT16HTF25664H(I)Y-53E__
MT16HTF25664H(I)Y-40E__
Part Number
Part Number
1. The data sheet for the base device can be found on Micron’s Web site.
2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions.
Consult factory for current revision codes. Example: MT16HTF12864HY-40ED1.
2
2
1
1
512Mb DDR2 SDRAM
1Gb DDR2 SDRAM
Module
Density
Module
Density
1GB
1GB
1GB
1GB
1GB
2GB
2GB
2GB
2GB
2GB
Configuration
Configuration
128 Meg x 64
128 Meg x 64
128 Meg x 64
128 Meg x 64
128 Meg x 64
256 Meg x 64
256 Meg x 64
256 Meg x 64
256 Meg x 64
256 Meg x 64
1GB, 2GB (x64, DR) 200-Pin DDR2 SDRAM SODIMM
512Mb (64 Meg x 8)
16K A[13:0]
1K A[9:0]
4 BA[1:0]
2 S#[1:0]
1GB
8K
2
Bandwidth
Bandwidth
Module
Module
6.4 GB/s
6.4 GB/s
5.3 GB/s
4.3 GB/s
3.2 GB/s
6.4 GB/s
6.4 GB/s
5.3 GB/s
4.3 GB/s
3.2 GB/s
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Memory Clock/
Memory Clock/
3.75ns/533 MT/s
3.75ns/533 MT/s
2.5ns/800 MT/s
2.5ns/800 MT/s
3.0ns/667 MT/s
5.0ns/400 MT/s
2.5ns/800 MT/s
2.5ns/800 MT/s
3.0ns/667 MT/s
5.0ns/400 MT/s
Data Rate
Data Rate
1Gb (128 Meg x 8)
© 2004 Micron Technology, Inc. All rights reserved.
16K A[13:0]
8 BA[2:0]
1K A[9:0]
2 S#[1:0]
2GB
8K
(CL-
(CL-
Clock Cycles
Clock Cycles
t
t
Features
5-5-5
6-6-6
5-5-5
4-4-4
3-3-3
5-5-5
6-6-6
5-5-5
4-4-4
3-3-3
RCD-
RCD-
t
t
RP)
RP)