MT16HTF12864HY-40EB3 Micron Technology Inc, MT16HTF12864HY-40EB3 Datasheet - Page 13
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MT16HTF12864HY-40EB3
Manufacturer Part Number
MT16HTF12864HY-40EB3
Description
MODULE SDRAM DDR2 1GB 200SODIMM
Manufacturer
Micron Technology Inc
Specifications of MT16HTF12864HY-40EB3
Memory Type
DDR2 SDRAM
Memory Size
1GB
Speed
400MT/s
Package / Case
200-SODIMM
Main Category
DRAM Module
Sub-category
DDR2 SDRAM
Module Type
200SODIMM
Device Core Size
64b
Organization
128Mx64
Total Density
1GByte
Chip Density
512Mb
Access Time (max)
60ps
Maximum Clock Rate
400MHz
Operating Supply Voltage (typ)
1.8V
Operating Current
976mA
Number Of Elements
16
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
200
Mounting
Socket
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Table 10: DDR2 I
Values shown for MT47H128M8 DDR2 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) com-
ponent data sheet
PDF: 09005aef818e4054
htf16c128_256x64h.pdf - Rev. D 3/10 EN
Parameter
Operating bank interleave read current: All device banks interleaving
reads; I
=
HIGH, S# is HIGH between valid commands; Address bus inputs are stable
during deselects; Data bus inputs are switching
t
CK (I
OUT
DD
),
= 0mA; BL = 4, CL = CL (I
t
RC =
t
RC (I
DD
DD
Specifications and Conditions – 2GB (Continued)
),
t
RRD =
t
RRD (I
DD
), AL =
DD
),
t
t
RCD (I
RCD =
1GB, 2GB (x64, DR) 200-Pin DDR2 SDRAM SODIMM
DD
t
RCD (I
) - 1 ×
DD
13
t
CK (I
); CKE is
DD
);
t
CK
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Symbol
I
DD7
1
-80E/
2736
-800
2296
-667
© 2004 Micron Technology, Inc. All rights reserved.
I
DD
2216
-53E
Specifications
-40E
2136
Units
mA