MT9VDDF6472Y-40BF3 Micron Technology Inc, MT9VDDF6472Y-40BF3 Datasheet - Page 9

• Manufacturer Part Number: MT9VDDF6472Y-40BF3
• Description: MODULE DDR 512MB 184-DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT9VDDF6472Y-40BF3

• Memory Type: DDR SDRAM
• Memory Size: 512MB
• Speed: 400MT/s
• Package / Case: 184-DIMM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

progress, and the controller must wait the specified
time before initiating the subsequent operation. Vio-
lating either of these requirements will result in
unspecified operation.
A3 specifies the type of burst (sequential or inter-
leaved), A4–A6 specify the CAS latency, and A7–A12
specify the operating mode.
Burst Length
burst oriented, with the burst length being program-
mable, as shown in Figure 5, Mode Register Definition
Diagram. The burst length determines the maximum
number of column locations that can be accessed for a
given READ or WRITE command. Burst lengths of 2, 4,
or 8 locations are available for both the sequential and
the interleaved burst types.
operation or incompatibility with future versions may
result.
of columns equal to the burst length is effectively
selected. All accesses for that burst take place within
this block, meaning that the burst will wrap within the
block if a boundary is reached. The block is uniquely
selected by A1–Ai when the burst length is set to two,
by A2–Ai when the burst length is set to four and by
A3–Ai when the burst length is set to eight (where Ai is
the most significant column address bit for a given
configuration. See Note 5 of Table 6, Burst Definition
Table, on page 10, for Ai values). The remaining (least
significant) address bit(s) is (are) used to select the
starting location within the block. The programmed
burst length applies to both READ and WRITE bursts.
Burst Type
to be either sequential or interleaved; this is referred to
as the burst type and is selected via bit M3.
pdf: 09005aef80f6ab6a, source: 09005aef80f6ab23
DDAF9C32_64x72G.fm - Rev. C 9/04 EN
Mode register bits A0–A2 specify the burst length,
Read and write accesses to DDR SDRAM devices are
Reserved states should not be used, as unknown
When a READ or WRITE command is issued, a block
Accesses within a given burst may be programmed
256MB, 512MB (x72, ECC, SR) PC3200
9
mined by the burst length, the burst type and the start-
ing column address, as shown in Table 6, Burst
Definition Table, on page 10.
* M14 and M13 (BA1 and BA0)
must be “0, 0” to select the
base mode register (vs. the
extended mode register).
The ordering of accesses within a burst is deter-
Figure 5: Mode Register Definition
0*
14
BA1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
0*
13
BA0
184-PIN DDR SDRAM RDIMM
12
A12 A11
Operating Mode
11
10
A10
M12 M11
0
0
-
9
A9
0
0
-
8
A8
M10
0
0
-
7
Diagram
A7 A6 A5 A4 A3
M9
M6
0
0
-
CAS Latency BT
0
0
0
0
1
1
1
1
6
M8 M7
0
1
M5
-
0
0
1
1
0
0
1
1
5
0
0
-
M4
0
1
0
1
0
1
0
1
4
©2004 Micron Technology, Inc. All rights reserved.
M6-M0
M3
0
1
Valid
Valid
3
-
Burst Length
M2
0
0
0
0
1
1
1
1
2
A2 A1 A0
CAS Latency
Reserved
Reserved
Reserved
Reserved
Reserved
M1
0
0
1
1
0
0
1
1
Operating Mode
Normal Operation
Normal Operation/Reset DLL
All other states reserved
1
2.5
2
3
M0
0
1
0
1
0
1
0
1
0
Burst Type
Interleaved
Sequential
Reserved
Reserved
Reserved
Reserved
Reserved
Mode Register (Mx)
M3 = 0
Address Bus
2
4
8
Burst Length
Reserved
Reserved
Reserved
Reserved
Reserved
M3 = 1
2
4
8