MT16VDDF12864HG-335D2 Micron Technology Inc, MT16VDDF12864HG-335D2 Datasheet - Page 21

• Manufacturer Part Number: MT16VDDF12864HG-335D2
• Description: MODULE DDR SDRAM 1GB 200-SODIMM
• Manufacturer: Micron Technology Inc

Specifications of MT16VDDF12864HG-335D2

• Memory Type: DDR SDRAM
• Memory Size: 1GB
• Speed: 167MHz
• Package / Case: 200-SODIMM
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 557-1109

pdf: 09005aef80a77a90, source: 09005aef80a646bc
DDF16C64_128x64HG.fm - Rev. D 9/04 EN
43. CKE must be active (high) during the entire time a
44. IDD2N specifies the DQ, DQS, and DM to be
refresh command is executed. That is, from the
time the AUTO REFRESH command is registered,
CKE must be active at each rising clock edge, until
t
driven to a valid high or low logic level. IDD2Q is
similar to IDD2F except IDD2Q specifies the
address and control inputs to remain stable.
Although IDD2F, IDD2N, and IDD2Q are similar,
IDD2F is “worst case.”
REF later.
21
45. Whenever the operating frequency is altered, not
46. Leakage number reflects the worst case leakage
47. When an input signal is HIGH or LOW, it is
48. The -335 speed grade will operate with
including jitter, the DLL is required to be reset.
This is followed by 200 clock cycles.
possible through the module pin, not what each
memory device contributes.
defined as a steady state logic HIGH or LOW.
= 40ns and
frequency.
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
RAS (MAX) = 120,000ns at any slower
200-PIN DDR SODIMM
512MB, 1GB (x64, DR)
©2004 Micron Technology, Inc.
t
RAS (MIN)