MT16LSDT6464AY-133D2 Micron Technology Inc, MT16LSDT6464AY-133D2 Datasheet - Page 23

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MT16LSDT6464AY-133D2

Manufacturer Part Number
MT16LSDT6464AY-133D2
Description
MODULE SDRAM 512MB 168-DIMM
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT16LSDT6464AY-133D2

Memory Type
SDRAM
Memory Size
512MB
Speed
133MHz
Package / Case
168-DIMM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Table 19:
Table 20:
Figure 10:
PDF: 09005aef807b3771/Source: 09005aef807b37b5
SD8_16C32_64x64AG.fm - Rev. D 3/05 EN
Mode
Memory Area Select Code (two arrays)
Protection Register Select Code
Current Address Read
RandomAddressRead
Sequential Read
Byte Write
Page Write
SDA OUT
SDA IN
SCL
EEPROM Device Select Code
The most significant bit (b7) is sent first
EEPROM Operating Modes
SPD EEPROM Timing Diagram
t SU:STA
RW Bit
1
0
1
1
0
0
t F
256MB (x64, SR), 512MB (x64, DR) 168-Pin SDRAM UDIMM
t HD:STA
t LOW
b7
t AA
1
0
V
V
V
V
IH
IH
IH
IH
WC
V
V
Device Type Identifier
or V
or V
or V
or V
IL
IL
IL
IL
IL
IL
t HIGH
b6
t HD:DAT
0
1
Bytes
≤ 16
23
≥ 1
1
1
1
b5
t DH
1
1
Start, Device Select, RW = 1
Start, Device Select, RW= 0, Address
RESTART, Device Select, RW= 1
Similar to Current or Random Address Read
START, Device Select, RW = 0
START, Device Select, RW = 0
t R
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t SU:DAT
b4
0
0
SA2
SA2
b3
Initial Sequence
Chip Enable
Serial Presence-Detect
©2003 Micron Technology, Inc. All rights reserved.
SA1
SA1
b2
t SU:STO
t BUF
UNDEFINED
SA0
SA0
b1
RW
RW
RW
b0

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