MT16LSDT6464AY-133D2 Micron Technology Inc, MT16LSDT6464AY-133D2 Datasheet - Page 18

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MT16LSDT6464AY-133D2

Manufacturer Part Number
MT16LSDT6464AY-133D2
Description
MODULE SDRAM 512MB 168-DIMM
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT16LSDT6464AY-133D2

Memory Type
SDRAM
Memory Size
512MB
Speed
133MHz
Package / Case
168-DIMM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Table 18:
PDF: 09005aef807b3771/Source: 09005aef807b37b5
SD8_16C32_64x64AG.fm - Rev. D 3/05 EN
Parameter
READ/WRITE command to READ/WRITE command
CKE to clock disable or power-down entry mode
CKE to clock enable or power-down exit setup mode
DQM to input data delay
DQM to data mask during WRITEs
DQMto data high-impedance during READs
WRITE command to input data delay
Data-into ACTIVE command
Data-into PRECHARGE command
Last data-in to burst STOP command
Last data-in to new READ/WRITE command
Lastdata-into PRECHARGE command
LOADMODEREGISTER command to ACTIVE or REFRESH command
Data-out to high-impedance from PRECHARGE
command
.
AC Functional Characteristics
Notes: 5, 6, 7, 8, 9, 11, 22; notes appear on page 19
256MB (x64, SR), 512MB (x64, DR) 168-Pin SDRAM UDIMM
CL = 3
CL = 2
18
Symbol
t
t
ROH(3)
ROH(2)
t
t
t
t
t
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
t
t
CKED
t
DQM
DWD
t
t
t
t
DQD
MRD
DQZ
CCD
DAL
PED
BDL
CDL
RDL
DPL
-13E
1
1
1
0
0
2
0
4
2
1
1
2
2
3
2
-133
Electrical Specifications
1
1
1
0
0
2
0
5
2
1
1
2
2
3
2
©2003 Micron Technology, Inc. All rights reserved.
-10E
1
1
1
0
0
2
0
4
2
1
1
2
2
3
2
Units
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
Notes
15, 21
16, 21
16, 21
17
14
14
17
17
17
17
17
17
26
17
17

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