MT18VDDF6472Y-40BK1 Micron Technology Inc, MT18VDDF6472Y-40BK1 Datasheet - Page 2
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MT18VDDF6472Y-40BK1
Manufacturer Part Number
MT18VDDF6472Y-40BK1
Description
MODULE DDR 512MB 200MHZ 184-DIMM
Manufacturer
Micron Technology Inc
Datasheet
1.MT18VDDF6472Y-40BK1.pdf
(17 pages)
Specifications of MT18VDDF6472Y-40BK1
Memory Type
DDR SDRAM
Memory Size
512MB
Speed
400MT/s
Package / Case
184-DIMM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Table 1:
Table 2:
Table 3:
Table 4:
PDF: 09005aef8074e85b/Source: 09005aef8072fe49
DDF18C64_128x72.fm - Rev. F 9/08 EN
Parameter
Part Number
Part Number
Refresh count
Row address
Device bank address
Device configuration
Column address
Module rank address
MT18VDDF6472G-40B__
MT18VDDF6472Y-40B__
MT18VDDF6472G-335__
MT18VDDF6472Y-335__
MT18VDDF6472G-265__
MT18VDDF12872G-40B__
MT18VDDF12872Y-40B__
MT18VDDF12872G-335__
MT18VDDF12872Y-335__
MT18VDDF12872G-26A__
MT18VDDF12872G-265__
MT18VDDF12872Y-265__
Speed
Grade
-26A
-40B
-335
-265
Key Timing Parameters
Addressing
Part Numbers and Timing Parameters – 512MB Modules
Base device: MT46V64M4,
Part Numbers and Timing Parameters – 1GB Modules
Base device: MT46V128M4,
2
2
Nomenclature
Notes:
Notes:
Industry
PC3200
PC2700
PC2100
PC2100
1. The values of
1. The data sheets for the base devices can be found on Micron’s Web site.
2. All part numbers end with a two-place code (not shown) that designates component and
actual DDR SDRAM device specifications are 15ns.
PCB revisions. Consult factory for current revision codes.
Example: MT18VDDF12872Y-335F1.
Module
Density
Module
Density
512MB
512MB
512MB
512MB
512MB
1GB
1GB
1GB
1GB
1GB
1GB
1GB
1
1
CL = 3
256Mb DDR SDRAM
400
512Mb DDR SDRAM
–
–
–
t
512MB, 1GB (x72, ECC, SR) 184-Pin DDR SDRAM RDIMM
RCD and
Configuration
Configuration
128 Meg x 72
128 Meg x 72
128 Meg x 72
128 Meg x 72
128 Meg x 72
128 Meg x 72
128 Meg x 72
Data Rate (MT/s)
64 Meg x 72
64 Meg x 72
64 Meg x 72
64 Meg x 72
64 Meg x 72
CL = 2.5
t
333
333
266
266
RP for -335 modules show 18ns to align with industry specifications;
256Mb (64 Meg x 4)
2K (A0–A9, A11)
2
4 (BA0, BA1)
8K (A0–A12)
512MB
1 (S0#)
CL = 2
Bandwidth
Bandwidth
8K
266
266
266
200
Module
Module
3.2 GB/s
3.2 GB/s
2.7 GB/s
2.7 GB/s
2.1 GB/s
3.2 GB/s
3.2 GB/s
2.7 GB/s
2.7 GB/s
2.1 GB/s
2.1 GB/s
2.1 GB/s
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
(ns)
RCD
15
18
20
20
Memory Clock/
Memory Clock/
5.0ns/400 MT/s
5.0ns/400 MT/s
6.0ns/333 MT/s
6.0ns/333 MT/s
7.5ns/266 MT/s
5.0ns/400 MT/s
5.0ns/400 MT/s
6.0ns/333 MT/s
6.0ns/333 MT/s
7.5ns/266 MT/s
7.5ns/266 MT/s
7.5ns/266 MT/s
Data Rate
Data Rate
(ns)
t
15
18
20
20
RP
4K (A0–A9, A11, A12)
512Mb (128 Meg x 4)
©2003 Micron Technology, Inc. All rights reserved.
4 (BA0, BA1)
8K (A0–A12)
1 (S0#)
1GB
(ns)
8K
t
55
60
65
65
RC
(CL-
(CL-
Clock Cycles
Clock Cycles
2.5-3-3
2.5-3-3
2.5-3-3
t
t
3-3-3
3-3-3
3-3-3
3-3-3
3-3-3
3-3-3
3-3-3
3-3-3
2-3-3
RCD-
RCD-
Features
Notes
t
t
RP)
RP)
1