MT18VDDF6472Y-40BK1 Micron Technology Inc, MT18VDDF6472Y-40BK1 Datasheet
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MT18VDDF6472Y-40BK1
Specifications of MT18VDDF6472Y-40BK1
Related parts for MT18VDDF6472Y-40BK1
MT18VDDF6472Y-40BK1 Summary of contents
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DDR SDRAM RDIMM MT18VDDF6472 – 512MB MT18VDDF12872 – 1GB For component data sheets, refer to Micron’s Web site: Features • 184-pin, registered dual in-line memory module (RDIMM) • Fast data transfer rates: PC2100, PC2700, or PC3200 • 512MB (64 Meg ...
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... Part Numbers and Timing Parameters – 512MB Modules Base device: MT46V64M4, Module 2 Part Number Density MT18VDDF6472G-40B__ 512MB MT18VDDF6472Y-40B__ 512MB MT18VDDF6472G-335__ 512MB MT18VDDF6472Y-335__ 512MB MT18VDDF6472G-265__ 512MB Table 4: Part Numbers and Timing Parameters – 1GB Modules Base device: MT46V128M4, Module 2 Part Number Density MT18VDDF12872G-40B__ ...
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Pin Assignments and Descriptions Table 5: Pin Assignments 184-Pin DDR RDIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol DQ17 47 REF 2 DQ0 25 DQS2 DQ1 ...
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Table 6: Pin Descriptions Symbol Type Description A0–12 Input Address inputs: Provide the row address for ACTIVE commands, and the column address and auto precharge bit (A10) for READ/WRITE commands, to select one location out of the memory array in ...
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Functional Block Diagrams Figure 3: Functional Block Diagram (R/C J, -40B RS0# DQS0 DQS1 DQS2 DQS3 DQS4 DQS5 DQS6 DQS7 DQS8 U6, U19 R RAS# e CAS CKE0 s WE# t A0–A12 e BA0, BA1 r ...
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Figure 4: Functional Block Diagram (R/C C, -335, -265 RS0# DQS0 DQS1 DQS2 DQS3 DQS4 DQS5 DQS6 DQS7 DQS8 U7, U16 R RAS# e CAS CKE0 s WE# t A0–A12 e BA0, BA1 r S0# s ...
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... JEDEC clock reference board. Registered mode will add one clock cycle to CL. Serial Presence-Detect Operation DDR SDRAM modules incorporate serial presence-detect. The SPD data is stored in a 256-byte EEPROM. The first 128 bytes are programmed by Micron to identify the module type and various DDR SDRAM organizations and timing parameters. The remaining 128 bytes of storage are available for use by the customer ...
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Electrical Specifications Stresses greater than those listed in Table 7 may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other conditions outside those indicated on the ...
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... Design Considerations Simulations Micron memory modules are designed to optimize signal integrity through carefully designed terminations, controlled board impedances, routing topologies, trace length matching, and decoupling. However, good signal integrity starts at the system level. Micron encourages designers to simulate the signal characteristics of the system’s memory bus to ensure adequate signal integrity of the entire memory system ...
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I Specifications DD Table 9: I Specifications and Conditions – 512MB (Die Revision ‘K’) DD Values are shown for the MT46V64M4 DDR SDRAM only and are computed from values specified in the 256Mb (64 Meg x 4) component data sheet ...
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Table 10: I Specifications and Conditions – 512MB (All Other Die Revisions) DD Values are shown for the MT46V64M4 DDR SDRAM only and are computed from values specified in the 256Mb (64 Meg x 4) component data sheet Parameter/Condition Operating ...
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Table 11: I Specifications and Conditions – 1GB DD Values are shown for the MT46V128M4 DDR SDRAM only and are computed from values specified in the 512Mb (128 Meg x 4) component data sheet Parameter/Condition Operating one bank active-precharge current: ...
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Register and PLL Specifications Table 12: Register Specifications SSTV16859 devices or equivalent JESD82-4B Parameter Symbol DC high-level input voltage command, address DC low-level input voltage command, address AC high-level V ...
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Table 13: PLL Specifications CVF857 device or equivalent JESD82-1A Parameter DC high-level input voltage DC low-level input voltage Input voltage (limits) Input differential-pair cross voltage Input differential voltage Input differential voltage Input current Dynamic supply current Dynamic supply current Dynamic ...
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Serial Presence-Detect Table 15: Serial Presence-Detect EEPROM DC Operating Conditions Parameter/Condition Supply voltage Input high voltage: Logic 1; All inputs Input low voltage: Logic 0; All inputs Output low voltage 3mA OUT Input leakage current GND ...
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Module Dimensions Figure 5: 184-Pin DDR RDIMM (R/C J, -40B) 2.0 (0.079) R (4X 2.5 (0.098) D (2X) 2.3 (0.091) TYP Pin 1 1.27 (0.05) TYP 2.2 (0.087) 64.77 (2.55) TYP U15 U16 U17 Pin 184 Notes: ...
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Figure 6: 184-Pin DDR RDIMM (R/C C, -335, -265) 2.0 (0.079) R (4X 2.5 (0.098) D (2X) 2.3 (0.091) TYP Pin 1 2.2 (0.087) 1.27 (0.05) TYP TYP 64.77 (2.55) U12 U13 U14 Pin 184 Notes: 1. ...