MT16VDDT6464AY-40BK1 Micron Technology Inc, MT16VDDT6464AY-40BK1 Datasheet

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MT16VDDT6464AY-40BK1

Manufacturer Part Number
MT16VDDT6464AY-40BK1
Description
MODULE DDR 512MB 200MHZ 184-DIMM
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT16VDDT6464AY-40BK1

Memory Type
DDR SDRAM
Memory Size
512MB
Speed
400MT/s
Package / Case
184-DIMM
Main Category
DRAM Module
Sub-category
DDR SDRAM
Module Type
184UDIMM
Device Core Size
64b
Organization
64Mx64
Total Density
512MByte
Chip Density
256Mb
Maximum Clock Rate
400MHz
Operating Supply Voltage (typ)
2.6V
Operating Current
1.632A
Number Of Elements
16
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.5V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
184
Mounting
Socket
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
DDR SDRAM UDIMM
MT16VDDT6464A – 512MB
MT16VDDT12864A – 1GB
MT16VDDT25664A – 2GB
For component data sheets, refer to Micron’s Web site:
Features
• 184-pin, unbuffered dual in-line memory module
• Fast data transfer rates: PC-2100, PC-2700,
• 512MB (64 Meg x 64), 1GB (128 Meg x 64),
• V
• V
• 2.5V I/O (SSTL_2-compatible)
• Internal, pipelined double data rate (DDR)
• Bidirectional data strobe (DQS) transmitted/
• Differential clock inputs (CK and CK#)
• Multiple internal device banks for concurrent
• Dual rank
• Selectable burst lengths (BL): 2, 4, or 8
• Auto precharge option
• Auto refresh and self refresh modes: 7.8125µs
• Serial presence-detect (SPD) with EEPROM
• Selectable CAS latency (CL) for maximum
• Gold edge contacts
Table 1:
PDF: 09005aef80739fa5/Source:09005aef807397e5
DD16C64_128_256x64A.fm - Rev. E 8/08 EN
(UDIMM)
or PC-3200
or 2GB (256 Meg x 64)
(-40B: V
2n-prefetch architecture
received with data—that is, source-synchronous
data capture
operation
maximum average periodic refresh interval
compatibility
Speed
Grade
DD
DDSPD
-26A
-40B
-335
-262
-265
= V
DD
DD
= +2.3V to +3.6V
Q = +2.5V
= V
Key Timing Parameters
Nomenclature
Products and specifications discussed herein are subject to change by Micron without notice.
DD
Industry
PC3200
PC2700
PC2100
PC2100
PC2100
Notes:
Q = +2.6V)
1. The values of
actual DDR SDRAM device specifications are 15ns.
CL = 3
400
Data Rate (MT/s)
512MB, 1GB, 2GB (x64, DR) 184-Pin DDR SDRAM UDIMM
t
RCD and
CL = 2.5
333
333
266
266
266
t
www.micron.com
RP for -335 modules show 18ns to align with industry specifications;
1
CL = 2
266
266
266
266
200
Figure 1:
Options
• Operating temperature
• Package
• Memory clock, speed, CAS latency
PCB height: 31.75mm (1.25in)
– Commercial (0°C ≤ T
– Industrial (–40°C ≤ T
– 200-pin DIMM (standard)
– 200-pin DIMM (Pb-free)
– 5.0ns (200 MHz), 400 MT/s, CL = 3
– 6.0ns (167 MHz), 333 MT/s, CL = 2.5
– 7.5ns (133 MHz), 266 MT/s, CL = 2
– 7.5ns (133 MHz), 266 MT/s, CL = 2
– 7.5ns (133 MHz), 266 MT/s, CL = 2.5
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1. Contact Micron for industrial temperature
2. Not recommended for new designs.
module offerings.
t
(ns)
RCD
15
18
15
20
20
184-Pin UDIMM (MO-206 R/C B)
(ns)
t
15
18
15
20
20
RP
A
A
1
≤ +85°C)
≤ +70°C)
©2004 Micron Technology, Inc. All rights reserved.
(ns)
t
55
60
60
65
65
RC
2
2
2
Marking
Features
Notes
None
-40B
-26A
-335
-262
-265
G
Y
1
I

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MT16VDDT6464AY-40BK1 Summary of contents

Page 1

... RCD and RP for -335 modules show 18ns to align with industry specifications; Micron Technology, Inc., reserves the right to change products or specifications without notice. 1 184-Pin UDIMM (MO-206 R ≤ +70°C) A ≤ +85° Contact Micron for industrial temperature module offerings ...

Page 2

... The data sheets for the base devices can be found on Micron’s Web site. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. Example: MT16VDDT6464AY-40BG4. PDF: 09005aef80739fa5/Source:09005aef807397e5 DD16C64_128_256x64A.fm - Rev. E 8/08 EN ...

Page 3

... The data sheets for the base devices can be found on Micron’s Web site. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. Example: MT16VDDT6464AY-40BG4. PDF: 09005aef80739fa5/Source:09005aef807397e5 DD16C64_128_256x64A.fm - Rev. E 8/08 EN ...

Page 4

Pin Assignments and Descriptions Table 6: Pin Assignments 184-Pin DDR UDIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol DQ17 47 REF 2 DQ0 25 DQS2 DQ1 ...

Page 5

Table 7: Pin Descriptions Symbol Type Description A0–A13 Input Address inputs: Provide the row address for ACTIVE commands, and the column address and auto precharge bit (A10) for READ/WRITE commands, to select one location out of the memory array in ...

Page 6

Functional Block Diagram Figure 2: Functional Block Diagram S1# S0# DQS0 DM0 DM CS# DQS DQ DQ0 DQ DQ1 DQ DQ2 DQ DQ3 DQ DQ4 DQ DQ5 DQ DQ6 DQ DQ7 DQS1 DM1 DM CS# DQS DQ8 DQ DQ9 DQ ...

Page 7

... READs and by the memory controller during WRITEs. DQS is edge-aligned with data for READs and center-aligned with data for WRITEs. DDR SDRAM modules operate from differential clock inputs (CK and CK#); the crossing of CK going HIGH and CK# going LOW will be referred to as the positive edge of CK. ...

Page 8

Electrical Specifications Stresses greater than those listed in Table 8 may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other conditions outside those indicated in each ...

Page 9

... Design Considerations Simulations Micron memory modules are designed to optimize signal integrity through carefully designed terminations, controlled board impedances, routing topologies, trace length matching, and decoupling. However, good signal integrity starts at the system level. Micron encourages designers to simulate the signal characteristics of the system’s memory bus to ensure adequate signal integrity of the entire memory system ...

Page 10

I Specifications DD Table 10: I Specifications and Conditions – 512MB (Die Revision K) DD Values are for the MT46V32M8 DDR SDRAM only and are computed from values specified in the 256Mb (32 Meg x 8) component data sheet Parameter/Condition ...

Page 11

Table 11: I Specifications and Conditions – 512MB (All Other Die Revisions) DD Values are for the MT46V32M8 DDR SDRAM only and are computed from values specified in the 256Mb (32 Meg x 8) component data sheet Parameter/Condition Operating one ...

Page 12

Table 12: I Specifications and Conditions – 1GB DD Values are for the MT46V64M8 DDR SDRAM only and are computed from values specified in the 512Mb (64 Meg x 8) component data sheet Parameter/Condition Operating one bank active-precharge current: t ...

Page 13

Table 13: I Specifications and Conditions – 2GB DD Values are for the MT46V128M8 DDR SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) component data sheet Parameter/Condition Operating one bank active-precharge current: t ...

Page 14

Serial Presence-Detect Table 14: Serial Presence-Detect EEPROM DC Operating Conditions Parameter/Condition Supply voltage Input high voltage: Logic 1; All inputs Input low voltage: Logic 0; All inputs Output low voltage 3mA OUT Input leakage current GND ...

Page 15

Module Dimensions Figure 3: 184-Pin DDR UDIMM 2.0 (0.079) R (4X 2.5 (0.098) D (2X) 2.3 (0.091) TYP Pin 1 2.2 (0.87) 1.27 (0.05) TYP TYP U10 U11 U12 Pin 184 49.53 (1.95) TYP Notes: 1. All dimensions ...

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