MT8LSDT3264HG-13ED2 Micron Technology Inc, MT8LSDT3264HG-13ED2 Datasheet - Page 9

MODULE SDRAM 256MB 144SODIMM

MT8LSDT3264HG-13ED2

Manufacturer Part Number
MT8LSDT3264HG-13ED2
Description
MODULE SDRAM 256MB 144SODIMM
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT8LSDT3264HG-13ED2

Memory Type
SDRAM
Memory Size
256MB
Speed
133MHz
Package / Case
144-SODIMM
Main Category
DRAM Module
Sub-category
SDRAM
Module Type
144SODIMM
Device Core Size
64b
Organization
32Mx64
Total Density
256MByte
Chip Density
256Mb
Access Time (max)
5.4ns
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
3.3V
Operating Current
548mA
Number Of Elements
8
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
144
Mounting
Socket
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
because unknown operation or incompatibility with
future versions may result.
Write Burst Mode
M2 applies to both READ and WRITE bursts; when
M9 = 1, the programmed burst length applies to READ
bursts, but write accesses are single-location (non-
burst) accesses.
09005aef8077d63a
SD8C8_16_32x64HG.fm - Rev. C 6/04 EN
Test modes and reserved states should not be used,
When M9 = 0, the burst length programmed via M0-
9
Table 8:
64MB, 128MB, 256MB (x64, DR)
SPEED
-13E
-133
-10E
Micron Technology, Inc., reserves the right to change products or specifications without notice.
144-PIN SDRAM SODIMM
CAS LATENCY = 2
CAS Latency Table
CLOCK FREQUENCY (MHz)
ALLOWABLE OPERATING
133
100
100
©2004 Micron Technology, Inc. All rights reserved.
CAS LATENCY = 3
NA
143
133

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