MT4LSDT864HG-13EG2 Micron Technology Inc, MT4LSDT864HG-13EG2 Datasheet - Page 14
![MODULE SDRAM 64MB 144SODIMM](/photos/7/83/78349/mfg_mt_sodimm_series_sml.jpg)
MT4LSDT864HG-13EG2
Manufacturer Part Number
MT4LSDT864HG-13EG2
Description
MODULE SDRAM 64MB 144SODIMM
Manufacturer
Micron Technology Inc
Datasheet
1.MT4LSDT864HY-133G2.pdf
(22 pages)
Specifications of MT4LSDT864HG-13EG2
Memory Type
SDRAM
Memory Size
64MB
Speed
133MHz
Package / Case
144-SODIMM
Main Category
DRAM Module
Sub-category
SDRAM
Module Type
144SODIMM
Device Core Size
64b
Organization
8Mx64
Total Density
64MByte
Chip Density
128Mb
Access Time (max)
5.4ns
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
3.3V
Operating Current
660mA
Number Of Elements
4
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Operating Temp Range
0C to 65C
Operating Temperature Classification
Commercial
Pin Count
144
Mounting
Socket
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Table 13: Capacitance
Notes: 1; notes appear on page 16
Table 14: Electrical Characteristics and Recommended AC Operating Conditions
Notes: 5, 6, 8, 9, 11, 32; notes appear on page 16
Module AC timing parameters comply with PC100 and PC133 Design Specs, based on component parameters
09005aef80748a77
SD4C4_8_16X64HG.fm - Rev. C 6/04 EN
PARAMETER
Input Capacitance: Address and Command, CKE, DQMB
Input Capacitance: CK
Input/Output Capacitance: DQ
AC CHARACTERISTICS
PARAMETER
Access time from CLK
(positive edge)
Address hold time
Address setup time
CLK high-level width
CLK low-level width
Clock cycle time
CKE hold time
CKE setup time
CS#, RAS#, CAS#, WE#, DQM hold time
CS#, RAS#, CAS#, WE#, DQM setup time
Data-in hold time
Data-in setup time
Data-out high-impedance time CL = 3
Data-out low-impedance time
Data-out hold time (load)
Data-out hold time (no load)
ACTIVE to PRECHARGE command
ACTIVE to ACTIVE command period
ACTIVE to READ or WRITE delay
Refresh period
AUTO REFRESH period
PRECHARGE command period
ACTIVE bank a to ACTIVE bank b command
Transition time
WRITE recovery time
Exit SELF REFRESH to ACTIVE command
CL = 3
CL = 2
CL = 3
CL = 2
CL = 2
SYMBOL
t
t
t
t
t
t
t
t
t
t
AC(3)
AC(2)
CK(3)
CK(2)
HZ(3)
HZ(2)
t
t
t
t
t
t
CMH
OHN
t
t
t
t
t
CKH
CMS
t
RCD
RRD
t
t
RAS
t
t
CKS
t
REF
RFC
t
XSR
WR
AH
DH
OH
CH
AS
DS
RC
RP
t
CL
LZ
T
1 CLK
+ 7ns
MIN
0.8
1.5
2.5
2.5
7.5
0.8
1.5
0.8
1.5
0.8
1.5
1.8
0.3
37
60
15
66
15
14
14
67
7
1
3
-13E
14
120,000
MAX
5.4
5.4
5.4
5.4
1.2
64
32MB, 64MB, 128MB (x64, SR)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1 CLK +
7.5ns
MIN
0.8
1.5
2.5
2.5
7.5
0.8
1.5
0.8
1.5
0.8
1.5
1.8
0.3
44
66
20
66
20
15
15
75
10
1
3
SYMBOL
-133
CI2
C
144-PIN SDRAM SODIMM
C
IO
I1
120,000
MAX
5.4
5.4
1.2
64
6
6
1 CLK
+ 7ns
MIN
MIN
1.8
0.3
10
50
70
20
70
20
20
15
80
10
10
1
2
3
3
8
1
2
1
2
1
2
1
3
4
-10E
©2004 Micron Technology, Inc. All rights reserved.
120,000
MAX
1.2
64
6
6
6
6
MAX
15.2
14
6
UNITS
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
UNITS
NOTES
pF
pF
pF
27
23
23
10
10
28
31
24
25
20
7