TC58V64ADC-T051 Toshiba, TC58V64ADC-T051 Datasheet

no-image

TC58V64ADC-T051

Manufacturer Part Number
TC58V64ADC-T051
Description
IC 64MBIT NAND SMART 3V 44TSOP
Manufacturer
Toshiba
Datasheet

Specifications of TC58V64ADC-T051

Memory Size
8MB
Memory Type
EEPROM - Smart Media
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
TC58V64DC-CT0501
TC58V64DC-CT0501
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
64-MBIT (8M × 8 BITS) CMOS NAND E
DESCRIPTION
Read-Only Memory (NAND E
static register which allows program and read data to be transferred between the register and the memory cell
array in 528-byte increments. The Erase operation is implemented in a single block unit (8 Kbytes + 512 bytes: 528
bytes × 16 pages).
as well as for command inputs. The Erase and Program operations are automatically executed making the device
most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras
and other systems which require high-density non-volatile memory data storage.
order to maintain compatibility with other SmartMedia
FEATURES
PIN ASSIGNMENT
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general
• The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal
V
The TC58V64A is a single 3.3-V 64-Mbit (69,206,016) bit NAND Electrically Erasable and Programmable
The TC58V64A is a serial-type memory device which utilizes the I/O pins for both address and data input/output
The data stored in the TC58V64ADC needs to comply with the data format standardized by the SSFDC Forum in
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the
buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and
to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or
damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the
most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling
Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are
neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or
failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy
control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document
shall be made at the customer’s own risk.
V
CC
Organization
Modes
Mode control
Complies with the SmartMedia
SS
Memory cell array
Register
Page size
Block size
Read, Reset, Auto Page Program,
Auto Block Erase, Status Read
Serial input/output, Command control
Specification and Data Format Specification
issued by the SSFDC Forum
CE
CLE ALE
RE
22
1
21
RY
2
WE
/
BY
20
3
19
WP
4
GND LVD I/O8 I/O7 I/O6 I/O5 V
18
5
(TOP VIEW)
I/O1 I/O2 I/O3 I/O4 V
528 × 16K × 8
528 × 8
528 bytes
(8K + 512) bytes
17
6
2
16
7
PROM) organized as 528 bytes × 16 pages × 1024 blocks. The device has a 528-byte
15
8
TM
14
9 10 11
Electrical
13
12
SS
V
2
SS
PROM (8M BYTE SmartMedia
CC
TM
PIN NAMES
systems.
Power supply
Access time
Operating current
Package
V
Cell array-register
Serial Read cycle
Read (50-ns cycle)
Program (avg.)
Erase (avg.)
Standby
TC58V64ADC: FDC-22A (Weight: 1.8 g typ.)
CC
I/O1~I/O8
RY
GND
CLE
V
ALE
LVD
V
WE
RE
WP
CE
= 3.3 V ± 0.3 V
CC
/
SS
BY
I/O port
Chip enable
Write enable
Read enable
Command latch enable
Address latch enable
Write protect
Ready/Busy
Ground Input
Low Voltage Detect
Power supply
Ground
TM
is a trademark of Toshiba Corporation.
25 µs max
50 ns min
10 mA typ.
10 mA typ.
10 mA typ.
100 µA max
TM
2000-08-27 1/33
TC58V64ADC
)
000707EBA2

Related parts for TC58V64ADC-T051

TC58V64ADC-T051 Summary of contents

Page 1

... The data stored in the TC58V64ADC needs to comply with the data format standardized by the SSFDC Forum in order to maintain compatibility with other SmartMedia ...

Page 2

... The information contained herein is subject to change without notice. Status register Address register Command register Control circuit HV generator PARAMETER PARAMETER CONDITION OUT TC58V64ADC Column buffer Column decoder Data register Sense amp Memory cell array RATING −0.6~4.6 −0.6~4.6 −0.6 V~V + 0.3 V (≤ 4 ...

Page 3

... I IL OUT = cycle = cycle = cycle = cycle   − 0 −400 µ 2 0 Pin V OL TC58V64ADC MIN TYP. MAX  1014 1024 MIN TYP. MAX 3 3.3 3.6  −0.3*  0.8 MIN TYP. MAX   ±10   ±10   ...

Page 4

... CE High to Ready (When interrupted Read Mode) CRY t Device Reset Time (Read/Program/Erase) RST AC TEST CONDITIONS PARAMETER Input level Input pulse rise and fall time Input comparison level Output data comparison level Output load PARAMETER TC58V64ADC MIN MAX UNIT     ...

Page 5

... Refer to Application Note 15 toward the end of this document. is greater than or equal to 100 ns. CEH signal stays Ready. t CEH 526 527 A Busy MIN     TC58V64ADC pin. ≥ 100 0~30 ns → Busy signal is not output. A TYP. MAX UNIT µs 200 1000  ...

Page 6

... TIMING DIAGRAMS Latch Timing Diagram for Command/Address/Data CLE ALE I/O1 ~I/O8 Command Input Cycle Timing Diagram CLE t CLS ALS ALE I/O1 ~I/O8 Setup Time CLH ALH TC58V64ADC Hold Time 2000-08-27 6/33 ...

Page 7

... Address Input Cycle Timing Diagram t CLS CLE ALS ALE I/O1 ~I/O8 Data Input Cycle Timing Diagram CLE CE t ALS ALE WE I/O1 ~I/ A0~A7 A9~A16 TC58V64ADC ALH A17~A22 : CLH 527 2000-08-27 7/33 ...

Page 8

... Serial Read Cycle Timing Diagram REA I/O1 ~I/ Status Read Cycle Timing Diagram CLE t CLS I/O1 ~I/ 70H represents the hexadecimal number 70 REH RHZ REA RHZ t CLS t CLH WHC CSTO t WHR 70H* TC58V64ADC CHZ REA RHZ t CHZ RSTO RHZ Status output : 2000-08-27 8/33 ...

Page 9

... ALH ALS ALE I/O1 00H A0~A7 ~I/O8 Column address Read Operation using 00H Command N: 0~255 ALH AR2 A9~A16 A17~A22 ALH AR2 A9~A16 A17~A22 TC58V64ADC REA OUT OUT OUT OUT 527 : CHZ REA RHZ OUT OUT OUT 2000-08-27 9/33 t CEH t CRY t RB ...

Page 10

... DS DH I/O1 50H ~I/ Read Operation using 50H Command N: 0~15 t ALS ALH A0~A7 A9~A16 A17~A22 Column address N* t ALS ALH A0~A7 A9~A16 A17~A22 Column address N* TC58V64ADC t AR2 REA OUT OUT OUT 256 + M 256 + 527 : AR2 REA OUT OUT OUT 512 + M 512 + 527 ...

Page 11

... BY Sequential Read (2) Timing Diagram CLE CE WE ALE RE I/O1 01H A0~A7 A9~A16 A17~A22 ~I/O8 Column address Page t R address M Page M access Page t 256 + 256 + 256 + R address Page M access TC58V64ADC 527 527 t R Page access : 527 527 t R Page access : 2000-08-27 11/33 ...

Page 12

... Sequential Read (3) Timing Diagram CLE CE WE ALE RE I/O1 50H A0~A7 A9~A16 A17~A22 ~I/O8 Column address Page t 512 + 512 + 512 + R address Page M access TC58V64ADC 527 512 513 514 527 t R Page access : 2000-08-27 12/33 ...

Page 13

... Auto Block Erase Setup command t ALH t ALS not input data while data is being output ALH WB D0H Erase Start command : not input data while data is being output TC58V64ADC t PROG 10H 70H 527 BERASE Status 70H output Status Read Busy command 2000-08-27 13/ Status output ...

Page 14

... ID Read Operation Timing Diagram CLE t CLS ALH ALE I/O1 90H ~I/O8 t CLS ALS ALH AR1 t 00 Address input TC58V64ADC t REAID REAID 98H E6H Maker code Device code : 2000-08-27 14/33 ...

Page 15

... after completion of the operation. The output buffer for this signal is an open drain. Low Voltage Detect: LVD The LVD signal is used to detect the power supply voltage level L), such as during a Program or Erase operation, and will not enter REA TC58V64ADC TC58V64ADC CLE ALE ...

Page 16

... An address is read in via the I/O port over three consecutive clock cycles, as shown in Table 1. 8I/O I/O6 I/O5 I/O4 I/O3 I/ A14 A13 A12 A11 A10 A22 A21 A20 A19 A18 CLE ALE TC58V64ADC I/O1 A0~A7: Column address A9~A22: Page address A0 A13~A22: Block address A9 A9~A12: NAND address in block A17 2000-08-27 16/ ...

Page 17

... Output Deselect L Standby Second Cycle Acceptable while Busy       D0   ALE TC58V64ADC HEX data bit assignment (Example) Serial data input: 80H I/ I/O1 I/O1~I/O8 Power L Data output Active H High impedance Active * High impedance Standby 2000-08-27 17/33 ...

Page 18

... The operation of the device after input of the 01H command is the same as that of Read mode (1). If the start pointer set after column address 256, use Read mode (2). However, for a Sequential Read, output of the next page Cell array starts from column address 0. TC58V64ADC 2000-08-27 18/33 ...

Page 19

... A4-to-A7 address. (An 00H command is necessary to move the pointer back to the 0-to-511 main memory cell location.) Data output t R Busy 527 (01H) A Sequential Read (2) TC58V64ADC Data output Busy Busy (50H) 512 527 A Sequential Read (3) ...

Page 20

... Device Device 2 3 Busy 70H Status on Device 1 Figure 6. Status Read timing application example pin signals from multiple devices are wired together as shown in the TC58V64ADC The Pass/Fail status on I/O1 is only valid when the device is in the Ready state Device Device Status on Device N ...

Page 21

... After programming, the programmed data is transferred back to the register to be automatically verified by the device. If the programming does not succeed, the Program/Verify operation is repeated by the device until success is achieved or until the maximum loop number set in the device is reached. D0 Busy TC58V64ADC Pass 70 I/O Status Read Fail command ...

Page 22

... When a Reset (FFH) command is input during erasing D0 Internal erase voltage When a Reset (FFH) command is input during a Read operation Register set (max 10 µs) t RST FF Register set (max 500 µs) t RST FF (max 6 µs) t RST 2000-08-27 22/33 TC58V64ADC Figure 8. 00 Figure 9. 00 Figure 10. 00 ...

Page 23

... When two or more Reset commands are input in succession The second 70 ( command is invalid, but the third TC58V64ADC Figure 11. I/O status: Pass/Fail → Pass Ready/Busy → Ready I/O status: Ready/Busy → Busy Figure 12. (2) ( command is valid. 2000-08-27 23/33 ...

Page 24

... Table 6. Code table I/O8 I/O7 Maker code 1 0 Device code AR1 t REAID 98H Maker code , t and t refer to the AC Characteristics. REAID CR AR1 Figure13. ID Read timing I/O6 I/O5 I/O4 I/ TC58V64ADC E6H Device code I/O2 I/O1 Hex Data 0 0 98H 1 0 E6H 2000-08-27 24/33 ...

Page 25

... Address Start point B area A area Address DIN ↓ Start point C area Address DIN ↓ Start point B area Figure 15. Example of How to Set the Pointer TC58V64ADC 255 256 511 A B 00H 01H Pointer control 50H Figure 14. Pointer control 50H Address Start point C area ...

Page 26

... If the programming result for page address M is Fail, do not try to program the 10 page to address N in another block. Because the previous input data has been lost, the same input sequence of 80H command, address and data is necessary. TC58V64ADC For this operation the FFH command is needed. 00 [A] ...

Page 27

... CLE, ALE Ready 1.5 µs 1.0 µ 0.5 µ KΩ FF Reset Figure 20 Operation Figure 21. Power-on/off Sequence TC58V64ADC buffer consists of an open drain 3.0 V Busy 1 3 25° 100 KΩ 3 KΩ 4 KΩ R Don’t care V IL 2000-08-27 27/ ...

Page 28

... The Erase and Program operations are automatically reset when WP goes Low. The operations are enabled and disabled as follows: Enable Programming WE DIN (100 ns min) WW Disable Programming WE DIN (100 ns min) WW Enable Erasing WE DIN (100 ns min) WW Disable Erasing WE DIN (100 ns min TC58V64ADC 2000-08-27 28/33 ...

Page 29

... Although the device may read in a fourth address ignored inside the chip. Read operation CLE CE WE ALE I/O 00H, 01H, 50H Internal read operation starts when WE goes High in the third cycle. Program operation CLE CE WE ALE I/O 80H Address input Figure 22. Address input Ignored Figure 23. TC58V64ADC Ignored Data input 2000-08-27 29/33 ...

Page 30

... Busy state. (Refer to Figure 25.) I/O 00H/01H/50H Hence the RE clock input must start after the address input. Data Pattern 2 All 1s Data Pattern 2 Figure 24. be set to all 1). Figure 25. TC58V64ADC All 1s All 1s Data Pattern 10 Data Pattern 10 Address input 2000-08-27 30/33 ...

Page 31

... This chattering may cause damage to the data in the TC58V64ADC. Therefore, sufficient time must be allowed for contact bouncing to subside when a system is designed with SmartMedia (17) The TC58V64ADC is formatted to comply with the Physical and Logical Data Format of the SSFDC Forum at the time of shipping. Referring to the Block status area in the redundant area allows the system to detect bad blocks in the accordance with the physical data format issued by the SSFDC Forum ...

Page 32

... Some electrical specifications in this data sheet show differences from the Forum’s electrical specification. Complying with the Forum’s electrical specification maintains compatibility with other SmartMedias. Please refer folloing SSFDC Forum’s URL to get the detailed information of each specification. URL http://www.ssfdc.or. especially with large capacity SmartMedia TC58V64ADC small removable TM . 2000-08-27 32/33 ...

Page 33

... PACKAGE DIMENSIONS • FDC-22A TC58V64ADC Unit: mm 2000-08-27 33/33 ...

Related keywords