TLP181(GB,F,T) Toshiba, TLP181(GB,F,T) Datasheet - Page 4

• Manufacturer Part Number: TLP181(GB,F,T)
• Description: PHOTOCOUPLER TRANS-OUT 4-SMD
• Manufacturer: Toshiba

Specifications of TLP181(GB,F,T)

• Number Of Channels: 1
• Input Type: DC
• Voltage - Isolation: 3750Vrms
• Current Transfer Ratio (min): 100% @ 5mA
• Current Transfer Ratio (max): 600% @ 5mA
• Voltage - Output: 80V
• Current - Output / Channel: 50mA
• Current - Dc Forward (if): 50mA
• Vce Saturation (max): 400mV
• Output Type: Transistor
• Mounting Type: Surface Mount
• Package / Case: 4-SMD
• Configuration: 1 Channel
• Maximum Collector Emitter Voltage: 80 V
• Maximum Collector Emitter Saturation Voltage: 0.4 V
• Isolation Voltage: 3750 Vrms
• Current Transfer Ratio: 100 % to 600 %
• Maximum Forward Diode Voltage: 1.3 V
• Minimum Forward Diode Voltage: 1 V
• Maximum Power Dissipation: 200 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Forward Current: 10 mA
• Maximum Input Diode Current: 10 mA
• Output Device: Phototransistor
• Number Of Elements: 1
• Reverse Breakdown Voltage: 5V
• Forward Voltage: 1.3V
• Collector-emitter Voltage: 80V
• Package Type: MFSOP
• Collector Current (dc) (max): 50mA
• Power Dissipation: 200mW
• Collector-emitter Saturation Voltage: 0.4V
• Pin Count: 4
• Mounting: Surface Mount
• Operating Temp Range: -25C to 85C
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TLP181GBF

Individual Electrical Characteristics
Coupled Electrical Characteristics
Isolation Characteristics
Current transfer ratio
Saturated CTR
Collector−emitter
saturation voltage
Off−state collector current
Capacitance
(input to output)
Isolation resistance
Isolation voltage
Forward voltage
Reverse current
Capacitance
Collector−emitter
breakdown voltage
Emitter−collector
breakdown voltage
Collector dark current
Capacitance
(collector to emitter)
Characteristic
Characteristic
Characteristic
(Ta = 25°C)
V
V
I
C
V
Symbol
Symbol
Symbol
(BR) CEO
(BR) ECO
I
I
CE (sat)
I
/ I
C (off)
C
C
BV
CEO
C
R
V
C
I
CE
F (sat)
R
/ I
F
T
S
S
(Ta = 25°C)
S
F
(Ta = 25°C)
I
V
V = 0, f = 1 MHz
I
I
V
below 1000 lx)
V
light below 1000 lx)
V = 0, f = 1 MHz
I
IF = 1 mA, V
I
I
V
V
V
AC, 1 minute
AC, 1 second, in oil
DC, 1 minute, in oil
F
C
E
F
C
C
R
CE
CE
F
S
S
= 10 mA
= 5 mA, V
= 0.1 mA
= 0.5 mA
= 2.4 mA, I
= 0.2 mA, I
= 0.7V, V
4
= 5 V
= 0V, f = 1 MHz
= 500 V, R.H. ≤ 60%
= 48 V, ( Ambient light
= 48 V, Ta = 85°C, ( Ambient
Test Condition
Test Condition
Test Condition
CE
CE
CE
F
F
= 8 mA
= 1 mA
= 5 V
= 0.4 V
= 48 V
Rank GB
Rank GB
Rank GB
1×10
3750
MIn
100
Min
Min
1.0
80
50
30
—
—
—
—
—
—
—
—
—
—
—
—
—
7
12
10000
10000
Typ.
1.15
0.01
Typ.
Typ.
10
0.2
0.8
(2)
(4)
30
10
60
—
—
—
—
—
—
—
—
—
2
1
14
2009-11-12
Max
(10)
(50)
Max
Max
600
600
1.3
0.1
0.4
0.4
10
50
10
—
—
—
—
—
—
—
—
—
—
—
—
TLP181
V
Unit
Unit
Unit
V
μA
μA
μA
μA
pF
pF
pF
%
%
Ω
rms
V
V
V
V
dc