HCNW4562 Avago Technologies US Inc., HCNW4562 Datasheet - Page 9

• Manufacturer Part Number: HCNW4562
• Description: OPTOCPLR HI BAND 9MHZ 8DIP WIDE
• Manufacturer: Avago Technologies US Inc.

Specifications of HCNW4562

• Input Type: DC
• Package / Case: 8-DIP (0.400", 10.16mm)
• Number Of Channels: 1
• Voltage - Isolation: 5000Vrms
• Voltage - Output: 20V
• Current - Output / Channel: 8mA
• Current - Dc Forward (if): 25mA
• Vce Saturation (max): 1.25V
• Output Type: Transistor with Vcc
• Mounting Type: Through Hole
• Isolation Voltage: 5000 Vrms
• Minimum Forward Diode Voltage: 1.2 V
• Output Device: Phototransistor
• Configuration: 1 Channel
• Current Transfer Ratio: 52 %
• Maximum Forward Diode Voltage: 1.8 V
• Maximum Reverse Diode Voltage: 3 V
• Maximum Input Diode Current: 25 mA
• Maximum Power Dissipation: 100 mW
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current Transfer Ratio (max): -
• Current Transfer Ratio (min): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Contains lead / RoHS non-compliant
• Other names: 516-1050-5

Small Signal Characteristics (AC)
T
9
A
Parameter
Voltage Gain
G
Coefficient
Base Photo
Current
Variation
-3 dB Frequency
(i
-3 dB Frequency
(G
Gain Variation
Differential
Gain at
f = 3.58 MHz
Differential
Phase at
f = 3.58 MHz
Total Harmonic
Distortion
Output Noise
Voltage
Isolation Mode
Rejection Ratio
= 25°C, I
PB
V
V
Temperature
)
)
F
= 6 mA for HCPL-4562 and I
(0.1 MHz)
(10 MHz)
V
(6 MHz)
(6 MHz)
∆G
O
Symbol
(-3 dB)
(-3 dB)
IMRR
(noise)
THD
∆G
∆G
∆i
G
G
i
V
PB
/∆T
PB
V
V
V
V
HCNW4562
HCNW4562
HCNW4562
HCNW4562
HCNW4562
HCNW4562
HCNW4562
HCNW4562
HCNW4562
HCNW4562
HCPL-4562
HCPL-4562
HCPL-4562
HCPL-4562
HCPL-4562
HCPL-4562
HCPL-4562
HCPL-4562
HCPL-4562
HCPL-4562
HCPL-4562
Device
F
= 10 mA for HCNW4562 (i.e., Recommended I
Min.
0.8
6
6
Typ.*
±1.0
±0.9
±0.6
0.36
0.54
1.15
2.27
0.75
-0.3
950
122
119
2.0
3.0
1.1
1.1
0.8
1.5
2.5
15
13
17
±1
9
Max.
4.2
3.0
3.0
µV rms 10 Hz to 10 MHz
%/°C V
Units
MHz
MHz
deg.
-dB
-dB
-dB
dB
%
%
V
f
V
f
V
f
V
f
T
T
T
V
f
I
I
I
I
I
I
I
I
V
f = 3.58 MHz, G
f = 120 Hz, G
Fac
Fdc
Fac
Fdc
Fac
Fdc
Fac
Fdc
REF
REF
REF
REF
REF
A
A
A
IN
IN
IN
IN
IN
IN
IN
= 25°C
= -10°C
= 70°C
= 1 V
= 1 V
= 1 V
= 1 V
= 1 V
= 0.7 mA p-p,
= 1 mA p-p,
= 0.7 mA p-p,
= 1 mA p-p,
= 1 V
= 1 V
= 3 to 9 mA
= 7 to 13 mA
= 3 to 9 mA
= 7 to 13 mA
= 0.1 MHz
= 0.1 MHz
= 0.1 MHz
= 0.1 MHz
= 0.1 MHz
Test Conditions
P-P
P-P
P-P
P-P
P-P
P-P
P-P
,
,
,
,
,
,
FO
f
V
V
) unless otherwise specified.
REF
IN
= 2
V
= 1 V
= 0.1 MHz
= 2
P-P
,
3, 10,
3, 10,
1, 11
1, 11
1, 11
3, 7
3, 7
Fig.
12
12
14
1
4
1
Note
10
11
6
7
7
8
9