TCET1103 Vishay, TCET1103 Datasheet - Page 4

• Manufacturer Part Number: TCET1103
• Description: OPTOCOUPLER PHOTOTRANS 200% 4DIP
• Manufacturer: Vishay

Specifications of TCET1103

• Mounting Type: Through Hole
• Isolation Voltage: 5000 Vrms
• Number Of Channels: 1
• Input Type: DC
• Voltage - Isolation: 5000Vrms
• Current Transfer Ratio (min): 34% @ 1mA
• Current Transfer Ratio (max): 200% @ 10mA
• Voltage - Output: 70V
• Current - Output / Channel: 50mA
• Current - Dc Forward (if): 60mA
• Vce Saturation (max): 300mV
• Output Type: Transistor
• Package / Case: 4-DIP (0.300", 7.62mm)
• Forward Current: 60 mA
• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 6 V
• Output Device: Transistor
• Configuration: 1
• Maximum Collector Emitter Voltage: 70 V
• Maximum Collector Emitter Saturation Voltage: 300 mV
• Current Transfer Ratio: 200 %
• Maximum Forward Diode Voltage: 1.6 V
• Maximum Collector Current: 50 mA
• Maximum Power Dissipation: 265 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• No. Of Channels: 1
• Optocoupler Output Type: Phototransistor
• Input Current: 50mA
• Output Voltage: 70V
• Opto Case Style: DIP
• No. Of Pins: 4
• Approval Bodies: VDE, CSA, BSI EN
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TCET1100/TCET1100G
Vishay Semiconductors
Electrical Characteristics
T
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Output
Coupler
Current Transfer Ratio
www.vishay.com
4
Forward voltage
Junction capacitance
Collector emitter voltage
Emitter collector voltage
Collector-emitter cut-off current
Collector emitter saturation
voltage
Cut-off frequency
Coupling capacitance
I
amb
C
/I
F
= 25 °C, unless otherwise specified
Parameter
Parameter
Parameter
Parameter
I
V
I
I
V
I
V
R
f = 1 MHz
V
V
V
F
C
E
F
R
CE
CE
CE
CE
CE
L
= 50 mA
= 10 mA, I
= 100 μA
= 1 mA
= 100 Ω
= 0 V, f = 1 MHz
= 20 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
Test condition
Test condition
Test condition
Test condition
F
F
F
F
C
f
= 10 mA,
= 1 mA
= 5 mA
= 10 mA
= 0, E = 0
= 1 mA
Symbol
Symbol
Symbol
TCET1101G
TCET1102G
TCET1103G
TCET1104G
TCET1100G
TCET1105G
TCET1106G
TCET1107G
TCET1108G
TCET1109G
TCET1101G
TCET1102G
TCET1103G
TCET1104G
V
V
V
TCET1101
TCET1102
TCET1103
TCET1104
TCET1100
TCET1105
TCET1106
TCET1107
TCET1108
TCET1109
TCET1101
TCET1102
TCET1103
TCET1104
I
CEO
CEsat
V
CEO
ECO
C
C
f
c
F
k
j
Part
Min
Min
Min
70
7
Symbol
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
1.25
Typ.
Typ.
Typ.
110
100
130
200
100
160
Min
0.3
50
10
13
22
34
56
50
50
80
40
63
Typ.
Document Number 83503
30
45
70
90
Max
Max
Max
100
1.6
0.3
Rev. 2.2, 05-Sep-06
Max
600
150
300
160
260
400
125
200
320
80
Unit
Unit
Unit
kHz
nA
pF
pF
V
V
V
V
Unit
%
%
%
%
%
%
%
%
%
%
%
%
%
%