6N139(F) Toshiba, 6N139(F) Datasheet - Page 2
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6N139(F)
Manufacturer Part Number
6N139(F)
Description
PHOTOCOUPLER HS DARL-OUT 8-DIP
Manufacturer
Toshiba
Datasheet
1.6N139F.pdf
(6 pages)
Specifications of 6N139(F)
Voltage - Isolation
2500Vrms
Number Of Channels
1, Unidirectional
Current - Output / Channel
60mA
Propagation Delay High - Low @ If
5µs @ 500µA
Current - Dc Forward (if)
20mA
Input Type
DC
Output Type
Logic
Mounting Type
Through Hole
Package / Case
8-DIP (0.300", 7.62mm)
Voltage - Output
18V
Current Transfer Ratio (min)
400% @ 500µA
Configuration
1 Channel
Current Transfer Ratio
900 %
Maximum Baud Rate
100 KBps
Maximum Forward Diode Voltage
1.7 V
Maximum Reverse Diode Voltage
5 V
Maximum Input Diode Current
20 mA
Maximum Power Dissipation
100 mW
Maximum Operating Temperature
+ 70 C
Minimum Operating Temperature
0 C
Isolation Voltage
2500 Vrms
Maximum Fall Time
25 us
Maximum Rise Time
60 us
Output Device
Photodarlington
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Vce Saturation (max)
-
Current Transfer Ratio (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
6N139TF
Absolute Maximum Ratings
Operating temperature range
Storage temperature range
Lead solder temperature (10s)
Isolation voltage (1min., R.H.≤ 60%)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
Forward current
Pulse forward current
Total pulse forward current
Reverse voltage
Diode power dissipation
Output current
Emitter−base reverse voltage
Supply voltage
Output voltage
Output power dissipation
(*) JEDEC registered data
(**) Not registered JEDEC
(*1) 50% duty cycle, 1ms pulse width
(*2) Pulse width 1μs, 300pps
(*3) 6N138… −0.5 to 7V
(*4) 1.6mm below seating plane
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Characteristic
(*4)
(
(Note 1)
(Note 2)
(Note 3)
(Note 4)
*
) (Ta = 0°C to + 70°C)
Symbol
V
BV
I
I
V
FP
FP
V
T
T
T
CC
V
P
P
O
I
I
opr
stg
EB
sol
O
F
S
O
R
D
(*1)
(*2)
(*3)
(*3)
(**)
2
−55 to 125
−0.5 to 18
−0.5 to 18
0 to 70
Rating
2500
3540
100
260
0.5
20
40
35
60
1
5
V
Unit
mW
mW
mA
mA
mA
V
°C
°C
°C
rms
A
V
V
V
V
dc
6N138,6N139
2007-10-01