TLP620(F,T) Toshiba, TLP620(F,T) Datasheet - Page 3

• Manufacturer Part Number: TLP620(F,T)
• Description: PHOTOCPLR AC IN TRANS-OUT 4-DIP
• Manufacturer: Toshiba

Specifications of TLP620(F,T)

• Number Of Channels: 1
• Input Type: AC, DC
• Voltage - Isolation: 5000Vrms
• Current Transfer Ratio (min): 50% @ ±5mA
• Current Transfer Ratio (max): 600% @ ±5mA
• Voltage - Output: 55V
• Current - Output / Channel: 50mA
• Current - Dc Forward (if): 60mA
• Vce Saturation (max): 400mV
• Output Type: Transistor
• Mounting Type: Through Hole
• Package / Case: 4-DIP (0.300", 7.62mm)
• Output Device: Transistor
• Number Of Elements: 1
• Forward Voltage: 1.3V
• Forward Current: 60mA
• Collector-emitter Voltage: 55V
• Package Type: PDIP
• Collector Current (dc) (max): 50mA
• Isolation Voltage: 5000Vrms
• Power Dissipation: 250mW
• Current Transfer Ratio: 600%
• Pin Count: 4
• Mounting: Through Hole
• Operating Temp Range: -25C to 85C
• Operating Temperature Classification: Commercial
• Maximum Collector Emitter Voltage: 55 V
• Maximum Collector Emitter Saturation Voltage: 0.4 V
• Maximum Forward Diode Voltage: 1.3 V
• Maximum Collector Current: 50 mA
• Maximum Power Dissipation: 250 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Maximum Fall Time: 3 us
• Maximum Input Diode Current: 60 mA
• Maximum Rise Time: 2 us
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TLP620F

Recommended Operating Conditions
Individual Electrical Characteristics
Coupled Electrical Characteristics
Supply voltage
Forward current
Collector current
Operating temperature
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
Current transfer ratio
Saturated CTR
Collector−emitter saturation
voltage
Off−state collector current
CTR symmetry
Forward voltage
Forward current
Capacitance
Collector−emitter
breakdown voltage
Emitter−collector
breakdown voltage
Collector dark current
Capacitance
(collector to emitter)
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
Characteristic
Characteristic
Characteristic
V
V
I
C
V
I
Symbol
Symbol
(BR) CEO
(BR) ECO
C (ratio)
I
I
CE (sat)
I
/ I
C (off)
C
C
CEO
V
C
I
CE
F (sat)
F
/ I
F
T
(Ta = 25°C)
I
F
Symbol
F (RMS)
(Ta = 25°C)
V
T
IC
opr
CC
I
V
V = 0, f = 1MHz
I
I
V
V
V
I
Rank GB
IF = ±1mA, V
Rank GB
I
I
Rank GB
V
I
F
C
E
F
C
C
C
F
CE
CE
CE
F
= ±10mA
= ±5mA, V
= 0.1mA
= 0.5mA
= 2.4mA, I
= 0.2 mA, I
(I
= ±0.7V
= ± 0.7V, V
3
F
= 24V
= 24V, Ta = 85°C
= 0, f = 1MHz
= −5mA) / I
Min.
−25
―
―
―
Test Condition
Test Condition
CE
F
CE
F
CE
= ±8mA
= ±1 mA
Typ.
= 5V
= 0.4V
16
―
C
5
1
= 24V
(I
TLP620,TLP620−2,TLP620−4
F
= +5mA)
Max.
24
20
10
85
Unit
mA
mA
°C
V
MIn.
0.33
Min.
100
1.0
55
50
30
―
―
―
―
―
―
―
―
―
―
7
Typ.
1.15
Typ.
2.5
0.2
60
10
10
60
―
―
―
―
―
―
―
2
1
1
2007-10-01
Max.
Max.
100
600
600
1.3
0.4
0.4
20
50
10
―
―
―
―
―
―
―
3
Unit
Unit
μA
μA
μA
pF
nA
pF
―
%
%
V
V
V
V