TLP2631(F) Toshiba, TLP2631(F) Datasheet - Page 39
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TLP2631(F)
Manufacturer Part Number
TLP2631(F)
Description
PHOTOCOUPLER DUAL 8-DIP
Manufacturer
Toshiba
Specifications of TLP2631(F)
Voltage - Isolation
2500Vrms
Number Of Channels
2, Unidirectional
Current - Output / Channel
16mA
Data Rate
10MBd
Propagation Delay High - Low @ If
60ns @ 0 ~ 7.5mA
Current - Dc Forward (if)
20mA
Input Type
DC
Output Type
Open Collector
Mounting Type
Through Hole
Package / Case
8-DIP (0.300", 7.62mm)
Configuration
2 Channel
Maximum Baud Rate
10 MBd (Typ)
Maximum Forward Diode Voltage
1.75 V
Maximum Reverse Diode Voltage
5 V
Maximum Power Dissipation
40 mW
Maximum Operating Temperature
+ 70 C
Minimum Operating Temperature
0 C
Isolation Voltage
2500 Vrms
Maximum Continuous Output Current
16 mA
Maximum Fall Time
0.03 us
Maximum Forward Diode Current
20 mA
Output Device
Integrated Photo IC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
TLP2631F
Transistor-Output and Darlington-Transistor-Output Photocouplers (Continued)
Photocouplers for IGBT/MOSFET Gate Drive
*
Note 1: The EN60747-5-2 safety standard for compact packages is different from that for standard DIP packages.
Note 2: BSI and IEC: : Approved (supplementary or basic insulation)
Some of the photocouplers with triac output are also manufactured by Toshiba Semiconductor Thailand Co.,Ltd. For detailed information, please contact your nearest Toshiba sales
representative.
Under development. Specifications subject to change without notice. For the latest information, please contact your nearest Toshiba sales representative.
TLP184*
TLP185*
TLP280
TLP281
TLP284
TLP285
TLP620
TLP620-2
TLP627
TLP627-2
TLP290-4*
TLP291-4*
TLP155E
Part Number
Part Number
Since the mini-flat package is a compact package, please contact your nearest Toshiba sales representative for more details.
TÜV and VDE: : Approved
For the latest information, please contact your nearest Toshiba sales representative.
EN 60065- and IEC 60065-approved, EN 60950- and IEC 60950-approved
EN 60747-5-2-approved with option V4 or D4
Pin Configuration
16
16
Pin Configuration
1
1
15
15
8
1
8
1
2
2
6
1
14
14
3
3
4
1
4
1
6
1
6
1
4
1
4
1
4
1
4
1
7
2
7
2
13
13
4
4
: Design which meets safety standard/approval pending as of January 2011
5
12
12
5
5
6
3
6
3
4
3
4
3
3
2
3
2
3
2
3
2
3
2
3
2
11
11
6
6
10
10
4
3
7
7
5
4
5
4
9
8
9
8
SO6 (reinforced insulation)
AC input
SO6 (reinforced insulation)
SOP4
Lead pitch = 1.27 mm
AC input
SOP4
Lead pitch = 1.27 mm
General-purpose
SEMKO-approved
SOP4 (reinforced insulation)
Lead pitch = 1.27 mm
Creepage/clearance ≥ 5 mm
Isolation thickness ≥ 0.4 mm
AC input
SOP4 (reinforced insulation)
Lead pitch = 1.27 mm
Creepage/clearance ≥ 5 mm
Isolation thickness ≥ 0.4 mm
SEMKO-approved
DIP4
Transistor output
AC input
SEMKO-approved
DIP8
Dual-channel version of
the TLP620
SEMKO-approved
DIP4
Darlington transistor output
High V
SEMKO-approved
DIP8
Dual-channel version of
the TLP627
SEMKO-approved
SO16
4-channel version
Lead pitch = 1.27 mm
AC input
SO16
4-channel version
Lead pitch = 1.27 mm
SO6 (reinforced Insulation)
T
Direct drive of a
small-power
IGBT/MOSFET
opr
= 100°C (max)
CEO
Features
Features
: Approved (reinforced insulation)
Propagation
Delay Time
39
300 V
300 V
80 V
80 V
80 V
80 V
80 V
80 V
55 V
55 V
V
80 V
80 V
0.2 μs
(Max)
CEO
@1 Minute
3750
Vrms
3750
Vrms
2500
Vrms
2500
Vrms
3750
Vrms
3750
Vrms
5000
Vrms
5000
Vrms
5000
Vrms
5000
Vrms
Vrms
Vrms
2500
2500
BVs
current (max):
Peak output
: Design which meets safety standard/approval pending as of January 2011
Output
±0.6 A
UL
7.5 mA
(Max)
I
FHL
c-UL
—
—
—
—
Vrms
3750
BVs
Safety Standards
UL/cUL TÜV
TÜV
/
(1)
(1)
(1)
(1)
(1)
Safety Standards
VDE
(1)
(1)
(1)
(1)
(1)
(1)
(2)
(2)
(2)
VDE
BSI
BSI
(2)
IEC
IEC