TLP251(F) Toshiba, TLP251(F) Datasheet - Page 3

• Manufacturer Part Number: TLP251(F)
• Description: PHOTOCOUPLER HS TRANS OUT 8-DIP
• Manufacturer: Toshiba

Specifications of TLP251(F)

• Voltage - Isolation: 2500Vrms
• Number Of Channels: 1, Unidirectional
• Current - Output / Channel: 200mA
• Propagation Delay High - Low @ If: 250ns @ 8mA
• Current - Dc Forward (if): 20mA
• Input Type: DC
• Output Type: Push-Pull, Totem-Pole
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Configuration: 1 Channel
• Maximum Forward Diode Voltage: 1.8 V
• Maximum Reverse Diode Voltage: 5 V
• Maximum Input Diode Current: 20 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 20 C
• Isolation Voltage: 2500 Vrms
• Maximum Fall Time: 1 us
• Maximum Rise Time: 1 us
• Output Device: Photo IC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TLP251F

Recommended Operating Conditions
Electrical Characteristics
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
Note 6: Input signal rise time(fall time)<0.5μs.
Input current, on
Input voltage, off
Supply voltage
Peak output current
Operating temperature
Input forward voltage
Temperature coefficient of forward
voltage
Input reverse current
Input capacitance
Output current
Output voltage
Supply current
Threshould input
current
Threshold input
voltage
Supply voltage
Capacitance
(input−output)
Resistance (input−output)
* All typical values are at Ta=25°C
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
Characteristic
Characteristic
“
“
Output
Output
“
“
“
“
“
“
H
H
H
L
L
L
”
”
”
”
”
”
(Note6)
level
level
level
level
level
level
L → H
H → L
(Ta = −20
”
”
I
ΔV
OPH
Symbol
V
Symbol
V
I
I
I
I
V
I
F
V
I
V
F(ON)
F(OFF)
OPH
CCH
OPL
CCL
V
T
C
FLH
V
C
R
FHL
I
OH
CC
OL
R
opr
/ ΔTa
CC
F
T
s
s
/ I
OPL
(*1): Duration of I
~
70°C, unless otherwise specified)
Test
Cir−
cuit
―
―
―
―
―
―
―
―
―
―
―
Min.
1
2
3
4
−20
10
―
7
0
I
I
V
V = 0 , f = 1MHz , Ta = 25°C
V
(*1)
V
R
V
R
V
Ta = 25°C
V
V
Ta = 25°C
V
V
R
V
R
Vs = 0 , f = 1MHz
Ta = 25℃
Vs = 500V, Ta = 25℃
R.H. ≤ 60%
F
F
3
R
CC
CC1
CC1
CC
CC
CC
CC
CC1
CC1
L
L
L
L
= 10 mA , Ta = 25°C
= 10 mA
= 200Ω, I
= 200Ω, V
= 200Ω, V
= 200Ω, V
= 5V, Ta = 25°C
Typ.
=30V
= 30V, I
= 30V, I
= 30V, I
= 30V, I
―
―
―
25
8
= +15V, V
= +15V, V
= +15V, V
= +15V, V
O
Test Condition
time ≤ 50μs
I
V
I
V
F
F
F
F
F
F
F
8−6
6−5
F
O
O
= 10mA
=0
= 5mA
= 10mA
= 10mA
= 0mA
= 0mA
30
70
= 0.8V
> 0V
< 0V
EE1
EE1
EE1
EE1
= 4V
= 2.5V
Max.
±0.1
0.8
10
= −15V
= −15V
= −15V
= −15V
20
85
1×10
−0.1
Min.
0.1
0.8
―
10
―
―
―
―
11
―
―
―
―
―
―
Unit
mA
°C
V
V
A
12
−0.25
−14.5
Typ.*
10
−2.0
13.2
1.6
0.2
7.5
1.2
1.0
45
―
―
―
―
―
8
14
2007-10-01
−12.5
Max.
250
1.8
2.0
10
―
―
―
―
―
35
―
―
―
11
11
5
TLP251
mV / °C
Unit
mA
mA
μA
pF
pF
V
A
V
V
V
Ω