SI8410-A-IS Silicon Laboratories Inc, SI8410-A-IS Datasheet
SI8410-A-IS
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SI8410-A-IS
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SI8410-A-IS Summary of contents
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... Narrow Body SOIC Si841x DD1 DD2 GND2 DD1 5 4 GND1 GND2 Top View Si842x DD1 DD2 GND1 GND2 Top View U.S. Patent #6,262,600 U.S. Patent #6,525,566 U.S. Patent #6,873,065 U.S. Patent #7,075,329 U.S. Patent #7,302,247 U.S. Patent #7,376,212 Other Patents Pending Si8410/20/21 ...
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... Si8410/20/ OTES 2 Preliminary Rev. 0.12 ...
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... Layout Recommendations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 4.1. Supply Bypass . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 4.2. Input and Output Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 4.3. RF Radiated Emissions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 4.4. RF Immunity and Common Mode Transient Immunity . . . . . . . . . . . . . . . . . . . . . . . 22 5. Pin Descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 6. Ordering Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 7. Package Outline: 8-Pin SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Document Change List . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .26 Contact Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .28 Preliminary Rev. 0.12 Si8410/20/21 Page 3 ...
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... DD1 Si8421-A,-B,-C, V DD2 Si8421-A,-B,-C, V DD1 Si8421-A,-B,-C, V DD2 10 Mbps Supply Current (All inputs = 5 MHz square wave all outputs) Si8410-B,-C, V DD1 Si8410-B,-C, V DD2 Si8420-B,-C, V DD1 Si8420-B,-C, V DD2 Si8421-B,-C, V DD1 Si8421-B,-C, V DD2 100 Mbps Supply Current (All inputs = 50 MHz square wave all outputs) ...
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... PLH PWD See Figure 1 PSK(P-P) t PSK , t See Figure 1 PLH PWD See Figure 1 PSK(P-P) t PSK , t See Figure 1 PLH PWD See Figure 1 PSK(P-P) t PSK Preliminary Rev. 0.12 Si8410/20/21 Min Typ Max Unit 0 — 1 Mbps — — 1000 — — 30 — — 50 — — ...
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... Si8410/20/21 Table 1. Electrical Characteristics (Continued –40 to 125 ºC) DD1 DD2 A Parameter Symbol Output Rise Time Output Fall Time Common Mode Transient Immunity 2 Start-up Time Notes the magnitude of the difference in propagation delay times measured between different units operating at PSK(P-P) the same supply voltages, load, and ambient temperature. ...
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... DD1 Si8421-A,-B,-C, V DD2 Si8421-A,-B,-C, V DD1 Si8421-A,-B,-C, V DD2 10 Mbps Supply Current (All inputs = 5 MHz square wave all outputs) Si8410-B,-C, V DD1 Si8410-B,-C, V DD2 Si8420-B,-C, V DD1 Si8420-B,-C, V DD2 Si8421-B,-C, V DD1 Si8421-B,-C, V DD2 100 Mbps Supply Current (All inputs = 50 MHz square wave all outputs) ...
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... Si8410/20/21 Table 2. Electrical Characteristics (Continued 3 3 –40 to 125 °C) DD1 DD2 A Parameter Si841x/2x-A Maximum Data Rate Minimum Pulse Width Propagation Delay Pulse Width Distortion |t – PLH PHL 1 Propagation Delay Skew Channel-Channel Skew Si841x/2x-B Maximum Data Rate Minimum Pulse Width Propagation Delay ...
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... Start-up time is the time period from the application of power to valid data at the output. Symbol Test Condition For All Models CMTI Preliminary Rev. 0.12 Si8410/20/21 Min Typ Max Unit — 2 — — 2 — — kV/µs — 3 — µs 9 ...
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... DD1 Si8421-A,-B,-C, V DD2 Si8421-A,-B,-C, V DD1 Si8421-A,-B,-C, V DD2 10 Mbps Supply Current (All inputs = 5 MHz square wave all outputs) Si8410-B,-C, V DD1 Si8410-B,-C, V DD2 Si8420-B,-C, V DD1 Si8420-B,-C, V DD2 Si8421-B,-C, V DD1 Si8421-B,-C, V DD2 100 Mbps Supply Current (All inputs = 50 MHz square wave all outputs) ...
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... See Figure 1 PHL PLH PWD See Figure 1 t PSK(P-P) t PSK Si841x/2x See Figure 1 PHL PLH PWD See Figure 1 t PSK(P-P) t PSK Preliminary Rev. 0.12 Si8410/20/21 Min Typ Max Unit 0 — 1 Mbps — — 1000 — — 30 — — 50 — — ...
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... Si8410/20/21 Table 3. Electrical Characteristics (Continued 2 2 –40 to 100 °C) DD1 DD2 A Parameter Output Rise Time Output Fall Time Common Mode Transient Immunity 2 Start-up Time Notes the magnitude of the difference in propagation delay times measured between different units operating at the PSK(P-P) same supply voltages, load, and ambient temperature. ...
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... The maximum ambient temperature is dependent upon data frequency, output loading, the number of operating channels, and supply voltage. Symbol T STG DD1 DD2 Test Condition T 100 Mbps 150 Mbps DD1 DD2 Preliminary Rev. 0.12 Si8410/20/21 Min Typ Max Unit –65 — 150 C° –40 — 125 C° –0.5 — –0.5 — 0 –0.5 — ...
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... Si8410/20/21 Table 6. Regulatory Information CSA The Si84xx is certified under CSA Component Acceptance Notice. For more details, see File 232873. VDE The Si84xx is certified according to IEC 60747-5-2. For more details, see File 5006301-4880-0001. UL The Si84xx is certified under UL1577 component recognition program to provide basic insulation to 2500 V (1 minute production tested > ...
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... Partial Discharge < Symbol Test Condition T S θ 210 °C/ 5 150 ° °C A Preliminary Rev. 0.12 Si8410/20/21 Specification IIIa I-IV I-III I-II Characteristic Unit 560 V peak 896 V peak 1050 672 4000 V peak 2 9 Ω >10 Min Typ Max Unit — — ...
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... Si8410/20/21 Table 11. Thermal Characteristics Parameter IC Junction-to-Case Thermal Resistance IC Junction-to-Air Thermal Resistance Device Power Dissipation* *Note: The Si8420-C-IS is tested with V square wave. 100 Figure 2. Thermal Derating Curve, Dependence of Safety Limiting Values with Case Temperature per DIN EN 60747-5-2 16 Symbol Test Condition θ Thermocouple ...
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... Typical Performance Characteristics Data Rate (Mbps) Figure 3. Si8410 Typical V DD1 vs. Data Rate 5, 3.3, and 2.5 V Operation Data Rate (Mbps) Figure 4. Si8410 Typical V DD2 vs. Data Rate 5, 3.3, and 2.5 V Operation (15 pF Load Data Rate (Mbps) Figure 5. Si8420 Typical V DD1 vs. Data Rate 5, 3.3, and 2.5 V Operation ...
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... Si8410/20/ Falling Edge 7 6 Rising Edge 5 -40 - Temperature (Degrees C) Figure 8. Propagation Delay vs. Temperature 5 V Operation Falling Edge -40 - Temperature (Degrees C) Figure 9. Propagation Delay vs. Temperature 3.3 V Operation 15 13 Rising Edge -40 - Temperature (Degrees C) Figure 10. Propagation Delay vs. Temperature 2.5 V Operation 18 80 100 120 Rising Edge ...
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... Figure 12 illustrates an eye-diagram taken on an Si8410. The test used an Anritsu (MP1763C) Pulse Pattern Generator for the data source. The output of the generator's clock and data from an Si8410 were captured on an oscilloscope. The results illustrate that data integrity was maintained even at the high data rate of 150 Mbps. The results also show that very low pulse width distortion and very little jitter were exhibited ...
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... Si8410/20/21 4. Layout Recommendations Dielectric isolation is a set of specifications produced by safety regulatory agencies from around the world, which describes the physical construction of electrical equipment that derives power from high-voltage power systems, such as 100–240 V systems or industrial power. The dielectric test (or HIPOT test) given in the safety ...
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... The radiation is not from the IC chip but, rather, is due to a small amount of RF energy driving the isolated ground planes, which can act as a dipole antenna. The unshielded Si8410 evaluation board passes FCC requirements. Table 13 shows measured emissions compared to FCC requirements. ...
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... Si8410/20/21 4.4. RF Immunity and Common Mode Transient Immunity The Si841x and Si842x families have very high common mode transient immunity while transmitting data. This is typically measured by applying a square pulse with very fast rise/fall times between the isolated grounds. Measurements show no failures kV/µs. During a high surge event, the output may glitch low for up to 20– ...
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... Si8420/21 1 Supply 4 Ground 2 Digital I/O 3 Digital I/O 7 Digital I/O 6 Digital I/O 8 Supply 5 Ground Preliminary Rev. 0.12 Si8410/20/21 Si842x 8 V DD2 GND2 Top View Description Side 1 power supply. Side 1 ground. Side 1 digital input or output. Side 1 digital input or output. Side 2 digital input or output. ...
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... Si8410/20/21 6. Ordering Guide Ordering Part Number of Inputs Number V Side DD1 Si8410-A-IS 1 Si8410-B-IS 1 Si8410-C-IS 1 Si8420-A-IS 2 Si8420-B-IS 2 Si8420-C-IS 2 Si8421-A-IS 1 Si8421-B-IS 1 Si8421-C-IS 1 Note: All packages are Pb-free and RoHS Compliant. Moisture sensitivity level is MSL3 with peak reflow temperature of °C 260 according to the JEDEC industry standard classifications and peak solder temperature. ...
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... Figure 16. 8-pin Small Outline Integrated Circuit (SOIC) Package Table 14. Package Diagram Dimensions α Millimeters Symbol Min Max A 1.35 1.75 A1 0.10 0.25 A2 1.40 REF 1.55 REF B 0.33 0.51 C 0.19 0.25 D 4.80 5.00 E 3.80 4.00 e 1.27 BSC H 5.80 6.20 h 0.25 0.50 L 0.40 1.27 ∝ 0° 8° Preliminary Rev. 0.12 Si8410/20/21 25 ...
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... Si8410/20/ OCUMENT HANGE IST Revision 0.1 to Revision 0.11 Changed MSL2 to MSL3 in the "6. Ordering Guide" on page 24. Added pertinent patent numbers. 26 Preliminary Rev. 0.12 ...
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... N : OTES Preliminary Rev. 0.12 Si8410/20/21 27 ...
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... Si8410/20/ ONTACT NFORMATION Silicon Laboratories Inc. 400 West Cesar Chavez Austin, TX 78701 Tel: 1+(512) 416-8500 Fax: 1+(512) 416-9669 Toll Free: 1+(877) 444-3032 Email: PowerProducts@silabs.com Internet: www.silabs.com The information in this document is believed to be accurate in all respects at the time of publication but is subject to change without notice. ...