PEB 2026 T-S V1.1 Infineon Technologies, PEB 2026 T-S V1.1 Datasheet - Page 13
PEB 2026 T-S V1.1
Manufacturer Part Number
PEB 2026 T-S V1.1
Description
IC CTRLR N-CH ISDN HV PDSO-20-6
Manufacturer
Infineon Technologies
Datasheet
1.PEB_2026_T-S_V1.1.pdf
(32 pages)
Specifications of PEB 2026 T-S V1.1
Applications
*
Mounting Type
Surface Mount
Package / Case
DSO-20
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
PEB2026TSV1.1T
PEB2026TSV11NK
SP000007177
SP000225732
PEB2026TSV11NK
SP000007177
SP000225732
The diodes connected to GNDB and RB protect the IHPC against lightning and
overvoltages (see Absolute Maximum Ratings). The diode
drain-diode of the DMOS-transistor
Because of technology reasons („p“-substrate, junction isolation) there are also parasitic
diodes from pin
I
When line feeding is switched on (transistor
pins RA and GNDB (or GNDD) then it needs a certain time to unload the gate-source-
capacitance of
a current peak
An overvoltage protection circuit for pin RA, for example can produce such a short circuit
between pins RA and GNDB.
In the IHPC a fast bipolar npn-transistor limits such current peaks. With V
resulting
about 1.5A and a time duration (50% to 50%) of about 130nsec.
•
Data Sheet
BAT
current peak:
I
BAT
current transient has the profile of one triangular pulse with a peak value of
T
I
BAT
V
L
BAT
and to limit the current to the defined maximum value. In the meantime
on the supply voltage
to all other pins.
T
L
.
V
BAT
3-3
T
can be seen.
L
is on) and a short circuit occurs between
Functional Description
D
p
is the parasitic bulk-
BAT
=100 V, the
PEB 2026
PEF 2026
09.99