CS5307GDWR24 ON Semiconductor, CS5307GDWR24 Datasheet

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CS5307GDWR24

Manufacturer Part Number
CS5307GDWR24
Description
IC CTRLR BUCK 4PH VRM 9.0 24SOIC
Manufacturer
ON Semiconductor
Type
Step-Down (Buck)r
Datasheet

Specifications of CS5307GDWR24

Internal Switch(s)
No
Synchronous Rectifier
No
Number Of Outputs
1
Frequency - Switching
200kHz ~ 800kHz
Voltage - Input
4.5 ~ 14 V
Operating Temperature
0°C ~ 70°C
Mounting Type
Surface Mount
Package / Case
24-SOIC (7.5mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Current - Output
-
Voltage - Output
-
Power - Output
-
Other names
CS5307GDWR24OSTR
CS5307
Four-Phase VRM 9.0
Buck Controller
control features required to power the next generation of processors in
desktop, workstation and server applications. Combined with external
gate drivers and power components, the CS5307 implements a
compact, highly integrated buck converter. Enhanced V
inherently compensates for variations in both line and load. Current
sharing between phases is achieved by Peak Current Sharing.
threshold.
voltage/high current power supplies.
Features
July, 2002 – Rev. 8
Multiphase controllers provide fast, accurate regulation with the
The CS5307 includes Power Good with a programmable lower
Applications include Embedded Processor Power and low
Switching Regulator Controller
Accurate Current Sharing
Protection Features
System Power Management
Semiconductor Components Industries, LLC, 2002
and Fast Transient Response
Capacitor Requirements
Lossless Current Sensing
Enhanced V
Programmable 200 to 800 kHz Switching Frequency (Per Phase)
Duty Cycle – 0% to 100%
Programmable Adaptive Voltage Positioning Reduces Output
Programmable Soft Start
Pulse–by–Pulse Current Limit for Each Phase
Programmable Hiccup Overcurrent Protection
All “1” DAC Code Fault
Processor Overvoltage Protection through Bottom MOSFETs
Undervoltage Lockout
5–Bit DAC With 1.0% Tolerance Compatible with VRM 9.0
Power Good Output
Programmable Power Good Lower Threshold
Guaranteed Startup at –20 C
2
Control Method Provides Excellent Regulation
2
1
control
CS5307GDWR24
CS5307GDW24
Device
ORDERING INFORMATION
OCSET
CS
COMP
R
V
A
WL
YY
WW
GND
MARKING DIAGRAM
CS1
CS2
CS3
CS4
PIN CONNECTIONS
OSC
DRP
V
REF
http://onsemi.com
24
SS
FB
24
1
1
DW SUFFIX
CASE 751E
AWLYYWW
Package
SO–24L
SO–24L
= Assembly Location
= Wafer Lot
= Year
= Work Week
SO–24L
CS5307
1
Publication Order Number:
24
V
GATE1
GATE2
GATE3
GATE4
V
V
V
V
V
PWRGDS
PWRGD
1000 Tape & Reel
CC
ID0
ID1
ID2
ID3
ID4
30 Units/Rail
Shipping
CS5307/D

Related parts for CS5307GDWR24

CS5307GDWR24 Summary of contents

Page 1

... WW = Work Week PIN CONNECTIONS 1 GND OCSET R OSC CS1 CS2 CS3 CS4 CS REF V DRP V FB COMP SS ORDERING INFORMATION Device Package CS5307GDW24 SO–24L CS5307GDWR24 SO–24L GATE1 GATE2 GATE3 GATE4 V ID0 V ID1 V ID2 V ID3 V ID4 PWRGDS PWRGD Shipping 30 Units/Rail 1000 Tape & Reel Publication Order Number: ...

Page 2

V 6.2 V 5.5 V GND GND OCSET R OSC CS1 CS2 CS3 CS4 CS REF V DRP V FB COMP SS PWRGD V ID4 V ID3 V ID2 V ID1 V ID0 Figure 1. Application Diagram ...

Page 3

MAXIMUM RATINGS* Operating Junction Temperature Storage Temperature Range ESD Susceptibility (Human Body Model) Package Thermal Resistance Junction–to–Case Junction–to–Ambient Lead Temperature Soldering: Reflow (Note 1.) MSL 1. 60 second maximum above 183 C. *The maximum package power ...

Page 4

ELECTRICAL CHARACTERISTICS (0 C & COMP SS VCC Parameter Voltage Identification DAC (0 = Connected to GND Open or Pull–Up to Internal 3.3 V ...

Page 5

ELECTRICAL CHARACTERISTICS (continued COMP SS VCC Parameter Voltage Identification DAC (0 = Connected to GND Open or Pull–Up to Internal 3 External Voltage ...

Page 6

ELECTRICAL CHARACTERISTICS (continued COMP SS VCC Parameter Gates Rise Time 0.8 V < GATEx < 2 Fall Time 2.0 V > ...

Page 7

ELECTRICAL CHARACTERISTICS (continued COMP SS VCC Parameter Current Sense Amplifiers OCSET Input Bias Current OCSET = 0 V Current Sense Input to OCSET OCSET/(CSx–CS Gain OCSET < ...

Page 8

Dominant Dominant Reset Reset Dominant Set Figure 2. Block Diagram CS5307 Dominant Dominant Reset Reset Delay http://onsemi.com 8 ...

Page 9

TYPICAL PERFORMANCE CHARACTERISTICS 900 800 700 600 500 400 300 200 100 Value (k ) OSC Figure 3. Oscillator Frequency ...

Page 10

TYPICAL PERFORMANCE CHARACTERISTICS 2.9 Current Sense Amp 2 Comparator 2.7 Current Sense Amp to V Gain DRP 2.6 2.5 Current Sense Amp to PWM Comparator 2.4 2.3 2 Figure ...

Page 11

... Overview The CS5307 DC/DC controller from ON Semiconductor 2 was developed using the Enhanced V topology. Enhanced combines the original V topology with peak current–mode control for fast transient response and current sensing capability. The addition of an internal PWM ramp and implementation of fast–feedback directly from Vcore has improved transient response and simplified design ...

Page 12

Enhanced V responds to disturbances in V employing both “slow” and “fast” voltage regulation. The internal error amplifier performs the slow regulation. Depending on the gain and frequency compensation set by the amplifier’s external components, the error amplifier will ...

Page 13

R CSx SWNODE Lx C CSx RLx V OUT (V ) CORE + + 2 Figure 16. Enhanced V Control Employing Lossless Inductive Current Sensing and Internal Ramp Inductive Current Sensing For lossless sensing, current can be sensed across the ...

Page 14

Due to the faster than ideal RC time constant, there is an overshoot of 50% and the overshoot decays with a 200 s time constant. With this compensation, the OCSET pin threshold must be set more than 50% above the ...

Page 15

PWRGD PWRGD PWRGD low high Ç Ç Ç Ç Ç Ç HIGH Ç Ç Ç Ç Ç Ç Ç Ç Ç Ç Ç Ç LOW É É É Ç Ç Ç É É É Ç Ç Ç É É É ...

Page 16

Table 1. Fault Protection Logic Fault Modes Undervoltage Lockout VID–11111 Phase Over Current (0.33 V Limit) The latest VRM and processor specifications require a power supply to turn its output off in the event of a 11111 VID code. When ...

Page 17

For decreasing current: Dt DEC + OUT ) For typical processor applications with output voltages less than half the input voltage, the current will be increased much more quickly than it can be decreased. Thus, ...

Page 18

MAX dI/dt occurs in first few PWM cycles Vi TBD – ESR / Figure 22. Calculating the Input Inductance 4. Input Inductor Selection ...

Page 19

As with the output inductor, the input inductor must support the maximum current without saturating the inductor. Also, for an inexpensive iron powder core, such as the –26 or –52 from Micrometals, the inductance “swing” with DC bias must be ...

Page 20

Vf is the forward voltage of the MOSFET’s intrinsic diode diode at the converter output current. t_nonoverlap is the non–overlap time between the upper and lower gate drivers to prevent cross conduction. This time is usually specified in the ...

Page 21

R CS1 MAX C CS1 R CSx MAX C CSx V = VID – (I CORE = VID – I Figure 26. V Tuning Waveforms. The RC Time DRP Constant of the Current Sense ...

Page 22

Figure 28. V Tuning Waveforms. The RC Time DRP Constant of the Current Sense Network Is Optimal: V and V Respond to the Load Current Quickly DRP OUT Without Overshooting. For resistive current sensing, choose the current sense network (R ...

Page 23

Figure 31. At Full–Load the Peak–to–Peak Voltage Ripple on the COMP Pin Should Be Less than 20 mV for a Well–Tuned/Stable Controller. Higher COMP Voltage Ripple Will Contribute to Output Voltage Jitter. V OCSET + (I OUT,LIM ) DI Lo ...

Page 24

... JAPAN: ON Semiconductor, Japan Customer Focus Center 2–9–1 Kamimeguro, Meguro–ku, Tokyo, Japan 153–0051 Phone: 81–3–5773–3850 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 24 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14 ...

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