L6919ETR STMicroelectronics, L6919ETR Datasheet

IC CTRLR 5BIT PROG 2PHASE 28SOIC

L6919ETR

Manufacturer Part Number
L6919ETR
Description
IC CTRLR 5BIT PROG 2PHASE 28SOIC
Manufacturer
STMicroelectronics
Type
Step-Down (Buck)r
Datasheet

Specifications of L6919ETR

Internal Switch(s)
No
Synchronous Rectifier
Yes
Number Of Outputs
1
Voltage - Output
0.8 ~ 1.55 V
Current - Output
2A
Frequency - Switching
150kHz
Voltage - Input
5 ~ 12 V
Operating Temperature
-40°C ~ 150°C
Mounting Type
Surface Mount
Package / Case
28-SOIC (7.5mm Width)
Power - Output
2W
Output Voltage
0.8 V to 1.55 V
Supply Current
12.5 mA
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
0 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
497-4221-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
L6919ETR
Manufacturer:
FUJITSU
Quantity:
1 500
Part Number:
L6919ETR
Manufacturer:
ST
0
Part Number:
L6919ETR
Manufacturer:
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Quantity:
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Company:
Part Number:
L6919ETR
Quantity:
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APPLICATIONS
BLOCK DIAGRAM
September 2003
2 PHASE OPERATION WITH
SYNCRHONOUS RECTIFIER CONTROL
ULTRA FAST LOAD TRANSIENT RESPONSE
INTEGRATED HIGH CURRENT GATE
DRIVERS: UP TO 2A GATE CURRENT
TTL-COMPATIBLE 5 BIT PROGRAMMABLE
OUTPUT FROM 0.800V TO 1.550V WITH
25mV STEPS
DYNAMIC VID MANAGEMENT
0.6% OUTPUT VOLTAGE ACCURACY
10% ACTIVE CURRENT SHARING ACCURACY
DIGITAL 2048 STEP SOFT-START
OVERVOLTAGE PROTECTION
OVERCURRENT PROTECTION REALIZED
USING THE LOWER MOSFET'S R
SENSE RESISTOR
OSCILLATOR EXTERNALLY ADJUSTABLE
AND INTERNALLY FIXED AT 200kHz
POWER GOOD OUTPUT AND INHIBIT
FUNCTION
REMOTE SENSE BUFFER
PACKAGE: SO-28
POWER SUPPLY FOR SERVERS AND
WORKSTATIONS
POWER SUPPLY FOR HIGH CURRENT
MICROPROCESSORS
DISTRIBUTED POWER SUPPLY
5 BIT PROGRAMMABLE DUAL-PHASE CONTROLLER
PGO O D
PGO O D
VID 4
VID 4
VID 3
VID 3
VID 2
VID 2
VID 1
VID 1
VID 0
VID 0
FB G
FB G
FB R
FB R
SOFT- START
SOFT- START
3 2k
3 2k
3 2k
3 2k
DIGIT AL
DIGIT AL
D A C
D A C
32k
32k
R EMO TE
R EMO TE
BU FFE R
BU FFE R
32k
32k
V S EN
V S EN
O S C / I NH
O S C / I NH
I
I
FB
FB
C H1 OCP
C H1 OCP
FB
FB
dsON
CH 2 OC P
CH 2 OC P
A MPL IF IER
A MPL IF IER
V CC
V CC
V CC DR
V CC DR
ERR OR
ERR OR
WITH DYNAMIC VID MANAGEMENT
OR A
COM P
COM P
C UR REN T
C UR REN T
TO TAL
TO TAL
S GN D
S GN D
PW M1
PW M1
PW M2
PW M2
DESCRIPTION
The device is a power supply controller specifically
designed to provide a high performance DC/DC
conversion for high current microprocessors. The
device implements a dual-phase step-down con-
troller with a 180° phase-shift between each
phase. A precise 5-bit digital to analog converter
(DAC) allows adjusting the output voltage from
0.800V to 1.550V with 25mV binary steps manag-
ing On-The-Fly VID code changes.
The high precision internal reference assures the
selected output voltage to be within ±0.6%. The
high peak current gate drive affords to have fast
switching to the external power mos providing low
switching losses.
The device assures a fast protection against load
over current and load over/under voltage. An inter-
nal crowbar is provided turning on the low side
mosfet if an over-voltage is detected. In case of
over-current, the system works in Constant Cur-
rent mode.
CH1
CH1
O CP
O CP
CH2
CH2
O CP
O CP
V c c
V c c
Vc c
Vc c
CUR REN T
CUR REN T
CUR REN T
CUR REN T
CUR REN T
CUR REN T
REA DIN G
REA DIN G
REA DIN G
REA DIN G
REA DIN G
REA DIN G
ORDERING NUMBERS:L6919E
VC C D R
VC C D R
H S
H S
L S
L S
H S
H S
L S
L S
SO-28
BOO T 1
BOO T 1
U
U
GA T E1
GA T E1
PHAS E1
PHAS E1
L GAT E1
L GAT E1
ISE N1
ISE N1
PGN DS1
PGN DS1
PGN D
PGN D
PGN DS2
PGN DS2
ISE N2
ISE N2
L GAT E2
L GAT E2
PHAS E2
PHAS E2
U GA T E2
U GA T E2
BOO T 2
BOO T 2
L6919ETR
L6919E
1/33

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L6919ETR Summary of contents

Page 1

... C H1 OCP C H1 OCP CH2 CH2 ERR OR ERR OR A MPL IF IER A MPL IF IER COM P COM L6919E SO-28 ORDERING NUMBERS:L6919E L6919ETR BOO T 1 BOO PHAS E1 PHAS GAT E1 L GAT E1 ISE N1 ISE N1 PGN DS1 PGN DS1 PGN D PGN D PGN DS2 PGN DS2 ISE N2 ISE ...

Page 2

L6919E ABSOLUTE MAXIMUM RATINGS Symbol Vcc PGND CCDR V -V Boot Voltage BOOT PHASE V -V UGATE1 PHASE1 V -V UGATE2 PHASE2 LGATE1, PHASE1, LGATE2, PHASE2 to PGND VID0 to VID4 All other pins to PGND V Sustainable ...

Page 3

ELECTRICAL CHARACTERISTICS V = 12V ±15 70°C unless otherwise specified CC J Symbol Parameter Vcc SUPPLY CURRENT I Vcc supply current supply current CCDR CCDR I Boot supply current BOOTx POWER-ON Turn-On V ...

Page 4

L6919E ELECTRICAL CHARACTERISTICS (continued 12V ±15 70°C unless otherwise specified CC J Symbol Parameter DIFFERENTIAL CURRENT SENSING I , Bias Current ISEN1 I ISEN2 I Bias Current PGNDSx I , Bias Current at ISEN1 ...

Page 5

Table 1. Voltage Identification (VID) Codes VID4 VID3 VID2 VID1 ...

Page 6

L6919E PIN FUNCTION N Name 1 LGATE1 Channel 1 LS driver output. A little series resistor helps in reducing device-dissipated power. 2 VCCDR LS drivers supply: it can be varied from 5V to 12V buses. Filter locally with at least ...

Page 7

PIN FUNCTION (continued) N Name 17 OSC/INH Oscillator pin. FAULT It allows programming the switching frequency of each channel: the equivalent switching frequency at the load side results in being doubled. Internally fixed at 1.24V, the frequency is varied proportionally ...

Page 8

L6919E DEVICE DESCRIPTION The device is an integrated circuit realized in BCD technology. It provides complete control logic and protections for a high performance dual-phase step-down DC-DC converter optimized for microprocessor power supply de- signed to drive N ...

Page 9

DIGITAL TO ANALOG CONVERTER The built-in digital to analog converter allows the adjustment of the output voltage from 0.800V to 1.550V with 25mV as shown in the previous table 1. The internal reference is trimmed to ensure output voltage precision ...

Page 10

L6919E Figure 3. Drivers peak current: High Side (left) and Low Side (right) CH3 = HGATE1; CH4 = HGATE2 To allow the turning on of the low-side mosfet even in this case, a watchdog controller is enabled: if the source ...

Page 11

Figure 4. Current Reading Timing (Left) and Circuit (Right) I LS1 I LS2 Total current information Track & Hold Where external sense resistor or the rds,on of the low side mosfet and Rg is the transconductance SENSE ...

Page 12

L6919E 1. T Limited Output Voltage. ON This happens when the maximum ON time is reached before the current in each phase reaches I < 35 A). Figure 5a shows the maximum output voltage that the device is able to ...

Page 13

Figure 6. Constant Current operation TonMAX a) Maximum current for each phase In this particular situation, the switching frequency results reduced. The ON time is the maximum allowed (T ) while the OFF time depends on the application: onMAX T ...

Page 14

L6919E Figure 7. Output transient response without (a) and with (b) the droop function ESR DROP V NOM (a) Figure 8. Active Droop Function Circuit The feedback current is equal nominal full load (I threshold, so ...

Page 15

Figure 9. - Remote Buffer Connections REMOTE BUFFER 64k 64k 64k 64k FBR FBG VSEN R Remote Remote V Ground OUT RB used (±0.5% Accuracy) OUTPUT VOLTAGE MONITOR AND PROTECTIONS The device monitors through pin VSEN the regulated voltage in ...

Page 16

L6919E Figure 10. Soft Start CCDR V LGATEx V OUT PGOOD 2048 Clock Cycles Timing Diagram INPUT CAPACITOR The input capacitor is designed considering mainly the input RMS current that depends on the duty cycle as reported ...

Page 17

Ceramic capacitor can also introduce benefits in high frequency noise decoupling, noise generated by parasitic components along power path. OUTPUT CAPACITOR Since the microprocessors require a current variation beyond 50A doing ...

Page 18

L6919E Figure 12. Inductor ripple current vs V MAIN CONTROL LOOP The control loop is composed by the Current Sharing control loop and the Average Current Mode control loop. Each loop gives, with a proper gain, the correction to the ...

Page 19

The current sharing error is internally dominated by the voltage offset of Tran conductance differential amplifier; considering a voltage offset equal to 2mV across the sense resistor, the cur- rent reading error is given by ...

Page 20

L6919E With further simplifications, it results ------------------ - -------------- - – Considering now that in the application of interest ...

Page 21

A good layout solution can generate a benefit in lowering power dissipation on the power paths, reducing radi- ation and a proper connection between signal and power ground can optimize the performance ...

Page 22

L6919E or at least a portion of the total capacitance needed, has to be placed close to the power section in order to eliminate the stray inductance generated by the copper traces. Low ESR and ESL capacitors are required. Power ...

Page 23

An additional 100nF ceramic capacitor is suggested to place near HS mosfet drain. This helps in reduc- ing noise. – PHASE pin spikes. Since the HS mosfet switches in hard mode, heavy voltage spikes can be observed on the ...

Page 24

L6919E Demo Board Description The L6919E demo board shows the operation of the device in a dual phase application. This evaluation board allows output voltage adjustability (0.800V - 1.550V) through the switches S0-S4 and high output current capa- bility. The ...

Page 25

Two main configurations can be distinguished: Single Supply (VCC=VIN=12V) and Double Supply (VCC=12V VIN=5V or different). – Single Supply: In this case JP6 has to be completely shorted. The device is supplied with the same rail that is used for ...

Page 26

L6919E PCB AND COMPONENT LAYOUT Figure 23. PCB and Components Layouts (Dimensions: 10.8mm x 8.2mm) Component Side Internal SGND Plane 26/33 Internal PGND Plane Solder Side ...

Page 27

CPU Power Supply 12V IN Considering the high slope for the load transient, a high switching frequency has to be used. In addition to fast reaction, this helps in reducing output and input capacitor. Inductance value is also ...

Page 28

... Ceramic TDK Multilayer Ceramic SMD 1206 Rubycon MBZ Rubycon MBZ 77121 - 4Turns STMicroelectronics Vishay Vishay STMicroelectronics STMicroelectronics Output Current [A] SMD 0805 SMD 0805 SMD 0805 SMD 0805 SMD 0805 SMD 0805 SMD 0805 SMD 0805 SMD 0805 SMD 0805 SMD 0805 ...

Page 29

Figure 25 shows the mosfets temperature versus output current in steady state condition without any air-flow or heat sink. It can be observed that the mosfets are under 100ºC in any conditions. Load regulation is also re- ported from 10A ...

Page 30

... Ceramic TDK Multilayer Ceramic SMD 1206 Rubycon MBZ Rubycon MBZ 77121 - 4Turns STMicroelectronics Vishay-Siliconix Vishay-Siliconix STMicroelectronics STMicroelectronics Output Current [A] SMD 0806 SMD 0805 SMD 0805 SMD 0805 SMD 0805 SMD 0805 SMD 0805 SMD 0805 SMD 0805 SMD 0805 SMD 0805 ...

Page 31

Figure 29 shows the mosfets temperature versus output current in steady state condition without any air-flow or heat sink. It can be observed that the mosfets are under 105°C in any conditions. Load regulation is also re- ported from 10A ...

Page 32

L6919E mm DIM. MIN. TYP. MAX. MIN. A 2.65 a1 0.1 0.3 0.004 b 0.35 0.49 0.014 b1 0.23 0.32 0.009 C 0 (typ.) D 17.7 18.1 0.697 E 10 10.65 0.394 e 1.27 e3 16.51 F 7.4 ...

Page 33

... No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics ...

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