L6726A STMicroelectronics, L6726A Datasheet - Page 11
![IC CTRLR PWM 1PHASE SO-8](/photos/1/38/13851/497-8-soic_sml.jpg)
L6726A
Manufacturer Part Number
L6726A
Description
IC CTRLR PWM 1PHASE SO-8
Manufacturer
STMicroelectronics
Type
Step-Down (Buck)r
Datasheet
1.L6726ATR.pdf
(35 pages)
Specifications of L6726A
Internal Switch(s)
No
Synchronous Rectifier
No
Number Of Outputs
1
Voltage - Output
Adj to 0.8V
Frequency - Switching
270kHz
Voltage - Input
1.5 ~ 12 V
Operating Temperature
-20°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Output Current
1.5 A
Input Voltage
4.1 V to 13.2 V
Operating Temperature Range
- 40 C to + 150 C
Mounting Style
SMD/SMT
For Use With
497-9046 - BOARD EVAL BASED ON L6726A497-6364 - BOARD DEMO FOR TS4995EIJT497-6259 - BOARD EVAL 1PH STPDN CONV L6726A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Output
-
Power - Output
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
L6726A
Manufacturer:
ST
Quantity:
20 000
Part Number:
L6726AD
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
L6726ATR
Manufacturer:
FUJI
Quantity:
130
Part Number:
L6726ATR
Manufacturer:
ST
Quantity:
20 000
L6726A
5.1
Power dissipation
L6726A embeds high current MOSFET drivers for both high side and low side MOSFETs: it
is then important to consider the power that the device is going to dissipate in driving them
in order to avoid overcoming the maximum junction operative temperature.
Two main terms contribute in the device power dissipation: bias power and drivers power.
●
●
External gate resistors helps the device to dissipate the switching power since the same
power P
resulting in a general cooling of the device.
Figure 4.
Device bias power (P
supply pins and it is simply quantifiable as follow (assuming to supply HS and LS
drivers with the same VCC of the device):
Drivers power is the power needed by the driver to continuously switch on and off the
external MOSFETs; it is a function of the switching frequency, the voltage supply of the
driver and total gate charge of the selected MOSFETs. It can be quantified considering
that the total power P
dissipated by three main factors: external gate resistance (when present), intrinsic
MOSFET resistance and intrinsic driver resistance. This last term is the important one
to be determined to calculate the device power dissipation. The total power dissipated
to switch the MOSFETs results:
where V
SW
will be shared between the internal driver impedance and the external resistor
Soft start (left) and disable (right)
BOOT
P
SW
- V
=
PHASE
F
SW
DC
SW
is the voltage across the bootstrap capacitor.
) depends on the static consumption of the device through the
⋅
P
dissipated to switch the MOSFETs (easy calculable) is
[
Doc ID 12754 Rev 4
DC
Q
gHS
=
⋅
V
(
CC
V
BOOT
⋅
(
I
CC
–
+
V
I
PHASE
BOOT
)
)
+
Q
gLS
⋅
V
CC
Driver section
]
11/35